US4368216A
Expired / Lapsed
US
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Process for preparation of semiconductor and semiconductor photoelectrode
Assignee: Yeda Research and Development Co Ltd
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Filing: 1980-07-30
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Granted: 1983-01-11
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Expires: 2000-07-30
Abstract
Abstract Process for forming a semiconductor finding use in solid state and PEC cells as a photoelectrode, comprising preparing a slurry of at least one semiconductor starting material used to form the semiconductor, a flux and a liquid vehicle; applying a layer of the slurry to an electrically conductive substrate; and annealing the layer. The semiconductor produced by the process and a photoelectrochemical cell including the semiconductor.
Inventors
- 👤 Joost Manassen
- 👤 David Cahen
- 👤 Gary Hodes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:19
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/125; H01; H01G; H01G9/00; H01G9/20; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/543
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
99 words
A process for forming an electrode for use in a solar cell comprising: (a) preparing a slurry of at least one semiconductor starting material used to form said semiconductor in powdered form, a flux and a liquid vehicle; (b) applying a layer of said slurry to an electrically conductive substrate; (c) annealing said layer to form said semiconductor electrode by treating said layer of step (b) under conditions of temperature and pressure so as to at least partially dissolve at least a portion of one semiconductor material in said flux; and (d) inserting said semiconductor photoelectrode in said cell.
Claim 2
Dependent Claim
99 words
A process for forming an electrode for use in a solar cell comprising: (a) preparing a slurry of at least one semiconductor starting material used to form said semiconductor in powdered form, a flux and a liquid vehicle; (b) applying a layer of said slurry to an electrically conductive substrate; (c) annealing said layer to form said semiconductor electrode by treating said layer of step (b) under conditions of temperature and pressure so as to at least partially dissolve at least a portion of one semiconductor material in said flux; and (d) inserting said semiconductor photoelectrode in said cell.
Claim 3
Dependent Claim
19 words
The process as defined by claim 1 comprising annealing said layer at an elevated temperature under a suitable atmosphere.
Claim 4
Dependent Claim
14 words
The process as defined by claim 1 wherein said cell is a photoelectrochemical cell.
Claim 5
Dependent Claim
25 words
The process as defined by either of claims 1 or 3 comprising forming said semiconductor electrode to comprise binary, ternary, quaternary or higher multi-element compounds.
Claim 6
Dependent Claim
23 words
The process as defined by claim 4 wherein said flux is in powder form together with said at least one semiconductor starting material.
Claim 7
Dependent Claim
32 words
The process as defined by claim 5 wherein said at least one semiconductor starting material is formed by pressing said semiconductor material and grinding said pressed semiconductor material to form a powder.
Claim 8
Dependent Claim
29 words
The process as defined by claim 5, wherein said semiconductor starting material is formed by mixing a semiconductor with a flux, annealing said mixture and grinding said annealed mixture.
Claim 9
Dependent Claim
39 words
The process as defined by either of claims 1 or 3 comprising heating said flux to at least near the melting point of said flux, said flux being adapted to volatilize wholly, or in part, during said annealing step.
Claim 10
Dependent Claim
26 words
The process as defined by claim 8 wherein said flux is selected from the group consisting of a cadmium halide, a zinc halide or mixtures thereof.
Claim 11
Dependent Claim
24 words
The process as defined by either of claims 1 or 3 further comprising treating the electrode of step (c) with a specific metal-ion etching.
Claim 12
Dependent Claim
59 words
The process as defined by claim 10 wherein said specific metal-ion etching comprises treating said electrode of step (c) with a metal ion selected from the group consisting of Zn +2 , Cr +6 or Ce +4 , the complex ions of any of these ions, or a combination of any of these metal ions and/or their complex ions.
Claim 13
Dependent Claim
22 words
The process as defined by either of claims 1 or 3 wherein said flux is selected so as to dope said semiconductor.
Claim 14
Dependent Claim
28 words
The process as defined by claim 12 wherein said flux comprises a member selected from the group consisting of indium halide, aluminum halide, gallium halide or mixtures thereof.
Claim 15
Dependent Claim
27 words
The process as defined by claim 13 wherein said flux further comprises a member selected from the group consisting of cadmium halide, zinc halide, or mixtures thereof.
Claim 16
Dependent Claim
16 words
The process as defined by either of claims 1 or 3 wherein said liquid is water.
Claim 17
Dependent Claim
18 words
The process as defined by 15 wherein said water comprises a small quantity of a surface active agent.
Claim 18
Dependent Claim
18 words
The process as defined by 15 wherein said water comprises a small quantity of a surface active agent.
Claim 19
Dependent Claim
24 words
The process as defined by either of claims 1 or 3 wherein said liquid is a non-aqueous liquid or a mixture of non-aqueous liquids.
Claim 20
Dependent Claim
22 words
The process as defined by either of claims 1 or 3 wherein said liquid comprises water in admixture with a non-aqueous liquid.
Claim 21
Dependent Claim
51 words
The process as defined by claim 3 wherein said at least one starting material is selected from the group consisting of CdSe 0 .55 Te 0 .45, CdS 0 .9 Se 0 .1, (Cd 1-x Zn x ) (S,SeTe), GaAlAs, CuInS 2 , and chromium metal particles in a CdSe matrix.
Claim 22
Dependent Claim
83 words
The process as defined by claim 3 wherein said at least one starting material is selected from the group consisting of CdS, ZnSe, CdS 0 .9 Se 0 .1, CdTe 0 .6 S 0 .43, CdSe 0 .65 So 0 .1 Te 0 .25, CdSe 0 .74 Te 0 .26, CdSe 0 .65 Te 0 .35, CdTe 0 .75 Se 0 .25, CdTe, CdTe(0.3% In 2 S 9 ), CuInS 2 , GaAs, MoS 2 , and CdSe 0 .5 Te 0 .5.
Claim 23
Dependent Claim
44 words
The process as defined by either of claims 19 or 20 wherein said flux is selected from the group consisting of CdCl 2 , ZnBr 2 /CdSO 4 , InCl 3 /CdCl 2 , ZnCl 2 , InCl 3 , and CdI 2 .
Claim 24
Dependent Claim
31 words
The process as defined by either of claims 1 or 3 wherein said substrate is selected from the group consisting of Ti, chromium plated steel, graphite, conducting glass and mixtures thereof.
Claim 25
Dependent Claim
30 words
The process as defined by either of claims 1 or 3 further comprising preheating said substrate prior to applying said layer so as to assure satisfactory adhesion and electrical contact.
Claim 26
Dependent Claim
15 words
A photoelectrochemical cell electrode comprising a semiconductor electrode prepared by the process of claim 3.
Claim 27
Dependent Claim
100 words
A process for forming a semiconductor except a semiconductor of CdS alone, CdSe alone or mixtures or alloys thereof comprising the steps of: (a) preparing a slurry of at least one semiconductor starting material used to form said semiconductor, in powdered form, a flux and a liquid vehicle; (b) applying a layer of said slurry to an electrically conductive substrate; and (c) annealing said layer to form said semiconductor by treating said layer of step (b) under conditions of temperature and pressure so as to at least partially dissolve at least a portion of one semiconductor material in said flux.
Claim 28
Dependent Claim
100 words
A process for forming a semiconductor except a semiconductor of CdS alone, CdSe alone or mixtures or alloys thereof comprising the steps of: (a) preparing a slurry of at least one semiconductor starting material used to form said semiconductor, in powdered form, a flux and a liquid vehicle; (b) applying a layer of said slurry to an electrically conductive substrate; and (c) annealing said layer to form said semiconductor by treating said layer of step (b) under conditions of temperature and pressure so as to at least partially dissolve at least a portion of one semiconductor material in said flux.
Claim 29
Dependent Claim
21 words
The process as defined by claim 25 further comprising incorporating said semiconductor of step (c) in a solid state solar cell.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-10 | 1986-07-12 | 1987-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-10 | 1990-07-12 | 1991-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-10 | 1994-07-12 | 1995-01-11 | $7700.00 | Window Closed / Lapsed |