US4609424A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma enhanced deposition of semiconductors
Assignee: RTX Corp
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Filing: 1985-10-28
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Granted: 1986-09-02
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Expires: 2005-10-28
Abstract
Abstract Semiconductor thin films are produced using plasma assisted chemical vapor deposition on alkali halide single crystal substrates. Deposition is formed at relatively low temperatures so that sublimation of the substrate is not a problem. The invention process permits at high rate deposition of high quality semiconductors.
Inventors
- 👤 Alexander J. Shuskus
- 👤 Melvyn E. Cowher
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:25
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/105
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
186 words
An apparatus for depositing large single crystal semiconductor thin films on the surface of an alkali halide substrate which comprises: a. a reaction chamber and means associated therewith for maintaining said chamber at a controllable low pressure; b. means for generating a plasma within the reaction chamber, said plasma being generated in a portion of the chamber having a first cross section so that the plasma flows at a first rate in the region where it is generated; c. single crystal alkali halide substrate within the reaction chamber located in a portion of the reaction chamber having a second cross section which is less than the first cross section so that the plasma velocity in the vicinity of the said substrate is greater than the first plasma velocity, and means for maintaining the substrate at a controlled elevated temperature; d. means for flowing a semiconductor precursor gas through the reaction chamber and over the substrate, with the direction of flow being parallel to a line lying in the substrate surface to be coated, and means for removing said gas after it has passed over the substrate.
Claim 2
Independent Claim
186 words
An apparatus for depositing large single crystal semiconductor thin films on the surface of an alkali halide substrate which comprises: a. a reaction chamber and means associated therewith for maintaining said chamber at a controllable low pressure; b. means for generating a plasma within the reaction chamber, said plasma being generated in a portion of the chamber having a first cross section so that the plasma flows at a first rate in the region where it is generated; c. single crystal alkali halide substrate within the reaction chamber located in a portion of the reaction chamber having a second cross section which is less than the first cross section so that the plasma velocity in the vicinity of the said substrate is greater than the first plasma velocity, and means for maintaining the substrate at a controlled elevated temperature; d. means for flowing a semiconductor precursor gas through the reaction chamber and over the substrate, with the direction of flow being parallel to a line lying in the substrate surface to be coated, and means for removing said gas after it has passed over the substrate.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-01 | 1990-03-03 | 1990-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-01 | 1994-03-03 | 1994-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-01 | 1998-03-03 | 1998-09-02 | $7700.00 | Window Closed / Lapsed |