Lead-europium selenide-telluride heterojunction semiconductor laser

Claim 2

In a double heterojunction semiconductor lead salt infrared diode laser, the improvement wherein a semiconductive monocrystalline lead salt active region layer of given energy band gap, index of refraction, crystal structure and lattice constant is sandwiched between two semiconductive monocrystalline lead salt layers of mutually opposite conductivity type containing europium and selenium and having an energy band gap significantly higher than, an index of refraction significantly lower than, a crystal structure the same as, and a lattice constant substantially equal to said active region layer, effective to increase laser performance by providing lattice matching among said layers as well as providing at least carrier confinement with respect to said active region layer.

Claim 3

In a double heterojunction semiconductor infrared diode laser exhibiting current carrier and optical confinement for its active region layer but also exhibiting increased operating temperature due to close lattice matching of face centered cubic monocrystalline layers forming the double heterojunctions, a monocrystalline buffer layer of a given conductivity-type lead salt semiconductor containing europium and selenium that has an energy band gap greater, an index of refraction lesser, and a lattice constant substantially equal to predetermined values, a monocrystalline active region layer on said buffer layer of a lead salt semiconductor containing a pn junction and having said predetermined energy band gap, index of refraction and lattice constant, and a confinement layer on said active region layer of a lead salt semiconductor of conductivity type opposite to said given conductivity type and containing a lesser amount of europium and selenium than said active region layer, wherein said confinement layer has an energy band gap greater, an index of regraction smaller, and a lattice constant substantially equal to said predetermined values.

Claim 4

In a double heterojunction semiconductor infrared diode laser exhibiting current carrier and optical confinement for its active region layer but also exhibiting increased operating temperature due to close lattice matching of face centered cubic monocrystalline layers forming the double heterojunctions, a monocrystalline buffer layer of a given conductivity-type lead salt semiconductor containing europium and selenium that has an energy band gap greater, an index of refraction lesser, and a lattice constant substantially equal to predetermined values, a monocrystalline active region layer on said buffer layer of a lead salt semiconductor containing a pn junction and having said predetermined energy band gap, index of refraction and lattice constant, and a confinement layer on said active region layer of a lead salt semiconductor of conductivity type opposite to said given conductivity type and containing a lesser amount of europium and selenium than said active region layer, wherein said confinement layer has an energy band gap greater, an index of regraction smaller, and a lattice constant substantially equal to said predetermined values.

Claim 5

In a double heterojunction semiconductor short wavelength infrared diode laser, the improvement wherein a lead telluride monocrystalline semiconductive active region layer of given energy band gap, index of refraction, and lattice constant is sandwiched between two lead-europium selenide-telluride monocrystalline semiconductor layers of mutucally opposite conductivity type and having an energy band gap significantly higher than, an index of refraction significantly lower than, and a lattice constant substantially equal to said lead telluride active layer, effective to increase laser performance by providing lattice matching among said layers as well as providing confinement for said active region layer.

Claim 6

In a double heterojunction semiconductor short wavelength infrared diode laser, the improvement wherein a lead telluride monocrystalline semiconductive active region layer of given energy band gap, index of refraction, and lattice constant is sandwiched between two lead-europium selenide-telluride monocrystalline semiconductor layers of mutucally opposite conductivity type and having an energy band gap significantly higher than, an index of refraction significantly lower than, and a lattice constant substantially equal to said lead telluride active layer, effective to increase laser performance by providing lattice matching among said layers as well as providing confinement for said active region layer.

Claim 7

In a double heterojunction semiconductor short wavelength infrared diode laser exhibiting current carrier and optical confinement for its active layer and close lattice matching of monocrystalline confinement and buffer layers contiguous its active region layer, a monocrystalline buffer layer of p-type conductivity lead-europium selenide-telluride semiconductor having about 1-15 mole percent europium and about 1-15 mole percent selenium, a monocrystalline active region layer on said buffer layer of a lead-europium selenide-telluride semiconductor containing less europium and selenium than the buffer layer and containing a pn junction for producing lasing action, and a confinement layer on said active region layer of an n-type lead-europium selenide-telluride semiconductor of substantially the same composition as in said buffer layer.

Claim 8

In a double heterojunction semiconductor short wavelength infrared diode laser exhibiting current carrier and optical confinement for its active layer and close lattice matching of monocrystalline confinement and buffer layers contiguous its active region layer, a monocrystalline buffer layer of p-type conductivity lead-europium selenide-telluride semiconductor having about 1-15 mole percent europium and about 1-15 mole percent selenium, a monocrystalline active region layer on said buffer layer of a lead-europium selenide-telluride semiconductor containing less europium and selenium than the buffer layer and containing a pn junction for producing lasing action, and a confinement layer on said active region layer of an n-type lead-europium selenide-telluride semiconductor of substantially the same composition as in said buffer layer.

Claim 9

In a double heterojunction semiconductor long wavelength infrared diode laser, the improvement wherein a lead-tin telluride monocrystalline semiconductive active region layer of given energy band gap, index of refraction, and lattice constant is sandwiched between two lead-europium selenide-telluride monocrystalline semiconductor layers that may also contain tin, said lead-europium selenide-telluride monocrystalline semiconductor layers being of mutually opposite conductivity type and having an energy band gap significantly higher than, an index of refraction significantly lower than, and a lattice constant substantially equal to said lead-tin telluride active region layer, effective to increase laser performance by providing lattice matching among said layers as well as providing carrier and optical confinement to said active region layer.

Claim 10

In a double heterojunction semiconductor long wavelength infrared diode laser, the improvement wherein a lead-tin telluride monocrystalline semiconductive active region layer of given energy band gap, index of refraction, and lattice constant is sandwiched between two lead-europium selenide-telluride monocrystalline semiconductor layers that may also contain tin, said lead-europium selenide-telluride monocrystalline semiconductor layers being of mutually opposite conductivity type and having an energy band gap significantly higher than, an index of refraction significantly lower than, and a lattice constant substantially equal to said lead-tin telluride active region layer, effective to increase laser performance by providing lattice matching among said layers as well as providing carrier and optical confinement to said active region layer.

Claim 11

In a large optical cavity quantum well infrared diode laser, where current carriers are confined in a quantum well active region and photons are confined in a large optical cavity, the improvement wherein layers forming the quantum well are closely lattice-matched to a supporting substrate, an active region and a covering contact layer, said active region having a lower energy band gap than its confinement layers and said confinement layers containing lead, europium, selenium and tellurium, with the europium and selenium each comprising about 1-15 mole percent and the europium concentration in said carrier confinement layers defining the quantum well being at least about 1 mole percent less than the europium concentration in photon confinement layers defining the large optical cavity, whereby the energy band gap of said carrier confinement layers is greater than the energy band gap of said active region and less than the energy band gap of said photon confinement layers.

Claim 12

In a large optical cavity quantum well infrared diode laser, where current carriers are confined in a quantum well active region and photons are confined in a large optical cavity, the improvement wherein layers forming the quantum well are closely lattice-matched to a supporting substrate, an active region and a covering contact layer, said active region having a lower energy band gap than its confinement layers and said confinement layers containing lead, europium, selenium and tellurium, with the europium and selenium each comprising about 1-15 mole percent and the europium concentration in said carrier confinement layers defining the quantum well being at least about 1 mole percent less than the europium concentration in photon confinement layers defining the large optical cavity, whereby the energy band gap of said carrier confinement layers is greater than the energy band gap of said active region and less than the energy band gap of said photon confinement layers.