US3818328A
Expired / Lapsed
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Ferromagnetic heterojunction diode
Assignee: Siemens AG
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Filing: 1972-08-02
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Granted: 1974-06-18
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Expires: 1992-08-02
Abstract
Abstract A magnetically controllable electronic diode formed of a pair of electrodes spaced apart from one another by a layer of a ferromagnetic semiconductor material in contact with one of the electrodes and a layer of a ferromagnetic or metamagnetic electrical insulator material in contact with the other electrode and with the layer of ferromagnetic semiconductor material. The ferromagnetic and metamagnetic materials are composed of transition element chalcogenides, preferably rare earth chalcogenides such as europium sulfide or selenide, binary chromium thiospinel and binary chromium halogen spinel chalcogenides of the general formula: A Cr2 X3 Z wherein A is selected from the group of Cu, Cd, Eu, Fe, Hg, Zn and mixtures thereof; X is selected from the group S, Se, Te and mixtures thereof; and Z is selected from the group Br, Cr, I and mixtures thereof. The impedance characteristics of the diode are readily controlled by select application of an external magnetic field controlled in its direction and amplitude so that the diode has wide utility as an electronic circuit component, such as a magnetically controllable electronic switch means, or as a detector means for the direction and strength of magnetic fields.
Inventors
- 👤 W Zinn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 08:37
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/40; H10D99/00
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
47 words
In a magnetically controllable diode structure according to claim 1 wherein said means for applying a controllable magnetic field supplies a field strong enough to vary the magnetic alignment in said insulator layer but weak enough not to substantially change the magnetic alignment in said semiconductor material.
Claim 2
Dependent Claim
32 words
In a magnetically controlled diode according to claim 2 wherein said means for applying a controllable magnetic field supplies a field having a strength less than 200 oersteds to said insulator material.
Claim 3
Dependent Claim
32 words
In a magnetically controlled diode according to claim 2 wherein said means for applying a controllable magnetic field supplies a field having a strength less than 100 oersteds to said insulator material.
Claim 4
Dependent Claim
143 words
A magnetically controllable electric diode structure comprising; a pair of electrodes spaced from one another, a layer of a ferromagnetic semiconductor material in contact with a first electrode of said pair of electrodes, a layer of a ferromagnetic electrical insulator material in contact with a second electrode of said pair of electrodes and with said layer of ferromagnetic semiconductor material, whereby an applied electrical current flows through the diode structure from said first electrode to said second electrode by passing through said layer of ferromagnetic semiconductor material and said layer of ferromagnetic electrical insulator material, said ferromagnetic semiconductor material and said ferromagnetic electrical insulator material having essentially equal coercive force and having magnetization alignment deviating from one another within their respective layers, and means for applying a controllable magnetic field to controllably change the deviation angle between the magnetization alignments of said layers.
Claim 5
Dependent Claim
131 words
A magnetically controllable electric diode structure comprising; a pair of electrodes spaced from one another, a layer of a ferromagnetic semiconductor material in contact with a first electrode of said pair of electrodes, a layer of metamagnetic electrical insulator material in contact with a second electrode of said pair of electrodes and with said layer of the ferromagnetic semiconductor material, whereby an applied electrical current flows through the diode structure from said first electrode to said second electrode by passing through said layer of ferromagnetic semiconductor material and said layer of metamagnetic electrical insulator material, and means for applying a controllable magnetic field having an amplitude sufficiently large to control the alignment of magnetization in the metamagnetic electrical insulator layer in relation to the magnetization alignment in the ferromagnetic semiconductor layer.
Claim 6
Dependent Claim
47 words
In a magnetically controllable diode structure according to claim 6 wherein said means for applying a controllable magnetic field supplies a field strong enough to vary the magnetic alignment in said insulator layer but weak enough not to substantially change the magnetic alignment in said semiconductor material.
Claim 7
Dependent Claim
32 words
In a magnetically controlled diode according to claim 7 wherein said means for applying a controllable magnetic field supplies a field having a strength less than 200 oersteds to said insulator material.
Claim 8
Dependent Claim
32 words
In a magnetically controlled diode according to claim 7 wherein said means for applying a controllable magnetic field supplies a field having a strength less than 100 oersteds to said insulator material.
Claim 9
Dependent Claim
180 words
A magnetically controllable electric diode structure comprising; a pair of electrodes spaced from one another, said electrodes being formed of an electrically conductive material selected from the group consisting of a metal, a superconductive material, and a ferromagnetic degenerately doped semiconductor material, a layer of ferromagnetic semiconductor material in contact with a first electrode of said pair of electrodes, said ferromagnetic semiconductor material comprising a transition element chalcogenide, a layer of a ferromagnetic or a metamagnetic electrical insulator material in contact with a second electrode of said pair of electrodes and with said layer of the ferromagnetic semiconductor material, said ferromagmetic or metamagnetic electrical insulator material comprising a transition element chalcogenide, whereby an applied electrical current flows through the diode structure from said first electrode to said second electrode by passing through said layer of ferromagnetic semiconductor material and said layer of ferromagnetic or metamagnetic electrical insulator material, and means for applying a controllable magnetic field to change the relative relation of the magnetization alignment of said ferromagnetic semiconductor layer in relation to said ferromagnetic or metamagnetic electrical insulator layer.
Claim 10
Dependent Claim
23 words
A magnetically controllable electric diode structure as defined in claim 10 wherein the ferromagnetic semiconductor material comprises a ferromagnetic degenerately doped semiconductor material.
Claim 11
Dependent Claim
30 words
A magnetically controllable electric diode structure as defined in claim 10 wherein the ferromagnetic semiconductor material has a higher coercive force than the ferromagnetic or the metamagnetic electrical insulator material.
Claim 12
Dependent Claim
47 words
In a magnetically controllable diode structure according to claim 12 wherein said means for applying a controllable magnetic field supplies a field strong enough to vary the magnetic alignment in said insulator layer but weak enough not to substantially change the magnetic alignment in said semiconductor material.
Claim 13
Dependent Claim
32 words
In a magnetically controlled diode according to claim 13 wherein said means for applying a controllable magnetic field supplies a field having a strength less than 200 oersteds to said insulator material.
Claim 14
Dependent Claim
32 words
In a magnetically controlled diode according to claim 13 wherein said means for applying a controllable magnetic field supplies a field having a strength less than 100 oersteds to said insulator material.
Claim 15
Dependent Claim
25 words
A magnetically controllable electric diode structure as defined in claim 10 wherein the ferromagnetic or the metamagnetic electrical insulator material comprises a bivalent europium chalcogenide.
Claim 16
Dependent Claim
28 words
A magnetically controllable electric diode structure as defined in claim 16 wherein the bivalent europium chalcogenide is selected from the group consisting of europium sulfide and europium selenide.
Claim 17
Dependent Claim
81 words
A magnetically controllable electric diode structure as defined in claim 10 wherein the ferromagnetic or the metamagnetic electrical insulator material comprises a binary chromium spinel chalcogenide of the general formula: A Cr2 X3 Z wherein A is selected from the group consisting of Cu, Cd, Eu, Fe, Hg, Zn and mixtures thereof; X is selected from the group consisting of S, Se, Te and mixtures thereof; and Z is selected from the group consisting of Br, Cl, I and mixtures thereof.
Claim 18
Dependent Claim
21 words
A magnetically controllable electric diode structure as defined in claim 18 wherein the binary chromium spinel is a copper-chromium halide chalcogenide.
Claim 19
Dependent Claim
34 words
A magnetically controllable electric diode structure as defined in claim 10 wherein the ferromagnetic semiconductor material is degenerately doped with an element having a different valence from the cations of such ferromagnetic semiconductor material.
Claim 20
Dependent Claim
35 words
A magnetically controllable electric diode structure as defined in claim 10 wherein the ferromagnetic semiconductor material and the ferromagnetic or metamagnetic electrical insulator materials have magnetization alignment deviating from one another within their respective layers.
Claim 21
Dependent Claim
40 words
A magnetically controllable electric diode structure as defined in claim 21 wherein the deviation angle between the magnetization alignment is the ferromagnetic semiconductor material and the magnetization alignment in the ferromagnetic or metamagnetic electrical insulator material is a right angle.
Claim 22
Dependent Claim
24 words
A magnetically controllable electric diode structure as defined in claim 10 for use in an electronic circuit as a magnetically controllable electronic switch means.
Claim 23
Dependent Claim
24 words
A magnetically controllable electric diode structure as defined in claim 10 for use in an elecronic circuit as a magnetically controlled electronic amplifier means.
Claim 24
Dependent Claim
22 words
A magnetically controllable electric diode structure as defined in claim 10 for use in an electronic circuit as a magnetically controlled modulator.
Claim 25
Dependent Claim
25 words
A magnetically controllable electric diode structure as defined in claim 10 wherein the ferromagnetic or the metamagnetic electrical insulator material is a rare earth chalcogenide.
Claim 26
Dependent Claim
116 words
Means for detecting a magnetic field comprising: a voltage source, a region of ferromagnetic semiconductor material of a first conductivity type, a region of ferromagnetic electrical insulator material connected to said ferromagnetic semiconductor material to form a diode, said ferromagnetic semiconductor material being different from said ferromagnetic electrical insulator material, opposite terminals of said voltage source connected across said ferromagnetic semiconductor material and said ferromagnetic electrical insulator material to pass current therethrough, indicator means connected in circuit with said voltage source and said diode to indicate the current therethrough such that in the presence of a magnetic field the impedance of said diode varies as a function of the direction and magnitude of said magnetic field.
References Cited (Backward Citations)
US3541400A
Cited
US3544865A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-06-17 | 1977-12-17 | 1978-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-06-17 | 1981-12-17 | 1982-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-06-17 | 1985-12-17 | 1986-06-18 | $7700.00 | Window Closed / Lapsed |