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US4599678A
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Plasma-deposited capacitor dielectrics
Assignee: Polyplasma Inc
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Filing: 1985-03-19
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Granted: 1986-07-08
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Expires: 2005-03-19
Abstract
Abstract A plasma-deposited silicon compound thin film dielectric for use in a thin film capacitor. The film is produced in a high frequency glow discharge with a substrate heated to a temperature in excess of 50° C. A thin film capacitor using such a film has a lower dissipation factor and a reduced tendency to age.
Inventors
- 👤 Michael R. Wertheimer
- 👤 Tyamagondlu S. Ramu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:24
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/085; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31652; Y10T428/31663
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
35 words
A plasma-deposited silicon compound thin film dielectric material for use in a thin film capacitor, such film being produced in a glow discharge with a substrate heated to a temperature in excess of 50° C.
Claim 2
Dependent Claim
35 words
A plasma-deposited silicon compound thin film dielectric material for use in a thin film capacitor, such film being produced in a glow discharge with a substrate heated to a temperature in excess of 50° C.
Claim 3
Dependent Claim
19 words
A dielectric film as defined in claim 1 wherein the deposition frequency of the glow discharge is 2.45 GHz.
Claim 4
Dependent Claim
15 words
A dielectric film as defined in claim 1 wherein said silicon compound comprises an organo-silicone.
Claim 5
Dependent Claim
15 words
A dielectric film as defined in claim 3 wherein said organosilicone comprises plasma-polymerized hexamethyldisiloxane (PPHMDSO).
Claim 6
Dependent Claim
15 words
A dieletric film as defined in claim 3 wherein said organosilicone comprises plasma-polymerized hexamethyldisilazane (PPHMDSN).
Claim 7
Dependent Claim
26 words
A dielectric film as defined in claim 5 wherein said inorganic silicon compound is selected from the group of silicon nitride, silicon oxide or silicone oxynitride.
Claim 8
Dependent Claim
17 words
A dielectric film as defined in claim 1 wherein said silicon compound comprises an inorganic silicon compound.
Claim 9
Dependent Claim
35 words
A plasma-deposited silicon compound thin film dielectric material for use in a thin film capacitor, such film being produced in a glow discharge with a substrate heated to a temperature between 50° and 1000° C.
Claim 10
Dependent Claim
35 words
A plasma-deposited silicon compound thin film dielectric material for use in a thin film capacitor, such film being produced in a glow discharge with a substrate heated to a temperature between 50° and 1000° C.
Claim 11
Dependent Claim
15 words
A dielectric film as defined in claim 8 wherein said silicon compound comprises an organo-silicone.
Claim 12
Dependent Claim
15 words
A dielectric film as defined in claim 9 wherein said organosilicone comprises plasma-polymerized hexamethyldisiloxane (PPHMDSO).
Claim 13
Dependent Claim
15 words
A dielectric film as defined in claim 9 wherein said organosilicone comprises plasma-polymerized hexamethyldisilazane (PPHMDSN).
Claim 14
Dependent Claim
26 words
A dielectric film as defined in claim 11 wherein said inorganic silicon compound is selected from the group of silicon nitride, silicon oxide or silicone oxynitride.
Claim 15
Dependent Claim
17 words
A dielectric film as defined in claim 8 wherein said silicon compound comprises an inorganic silicon compound.
Claim 16
Dependent Claim
35 words
A plasma-deposited silicon compound thin film dielectric material for use in a thin film capacitor, such film being produced in a glow discharge with a substrate heated to a temperature between 100° and 650° C.
Claim 17
Dependent Claim
35 words
A plasma-deposited silicon compound thin film dielectric material for use in a thin film capacitor, such film being produced in a glow discharge with a substrate heated to a temperature between 100° and 650° C.
Claim 18
Dependent Claim
19 words
A dielectric film as defined in claim 14 wherein the deposition frequency of the glow discharge is 2.45 GHz.
Claim 19
Dependent Claim
15 words
A dielectric film as defined in claim 14 wherein said silicon compound comprises an organosilicone.
Claim 20
Dependent Claim
16 words
A dielectric film as defined in claim 16 wherein said organosilicone comprises plasma polymerized hexamethyldisiloxane (PPHMDSO).
Claim 21
Dependent Claim
15 words
A dielectric film as defined in claim 16 wherein said organosilicone comprises plasma-polymerized hexamethyldisilazane (PPHMDSN).
Claim 22
Dependent Claim
17 words
A dielectric film as defined in claim 14 wherein said silicon compound comprises an inorganic silicon compound.
Claim 23
Dependent Claim
38 words
A thin film capacitor characterized in that said capacitor comprises a plasma-deposited silicon compound thin film dielectric material, such film being produced in a glow discharge with a substrate heated to a temperature in excess of 50° C.
Claim 24
Dependent Claim
38 words
A thin film capacitor characterized in that said capacitor comprises a plasma-deposited silicon compound thin film dielectric material, such film being produced in a glow discharge with a substrate heated to a temperature in excess of 50° C.
Claim 25
Dependent Claim
16 words
A thin film capacitor as defined in claim 20 wherein said silicon compound comprises an organosilicone.
Claim 26
Dependent Claim
16 words
A thin film capacitor as defined in claim 21 wherein said organosilicone comprises plasma-polymerized hexamethyldisiloxane (PPHMDSO).
Claim 27
Dependent Claim
16 words
A thin film capacitor as defined in claim 21 wherein said organosilicone comprises plasma-polymerized hexamethyldisilazane (PPHMDSN).
Claim 28
Dependent Claim
18 words
A thin film capacitor as defined in claim 20 wherein said silicon compound comprises an inorganic silicon compound.
Claim 29
Dependent Claim
27 words
A thin film capacitor as defined in claim 24 wherein said inorganic silicon compound is selected from the group of silicon nitride, silicon oxide or silicon oxynitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-07-07 | 1990-01-06 | 1990-07-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-07-07 | 1994-01-06 | 1994-07-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-07-07 | 1998-01-06 | 1998-07-08 | $7700.00 | Window Closed / Lapsed |