Patent US4599482A successfully refreshed from Google Patents.
US4599482A
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Semiconductor photoelectric conversion device and method of making the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1984-03-06
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Granted: 1986-07-08
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Expires: 2004-03-06
Abstract
Abstract In a semiconductor photoelectric conversion device in which a first light-transparent conductive layer serving as an electrode is formed on a light transparent substrate, a non-single-crystal semiconductor laminate member having formed therein at least one PIN junction is formed on the first conductive layer and a second conductive layer serving as another electrode is formed on the semiconductor laminate member, the non-single-crystal semiconductor layer on the side of the first conductive layer is made of Si x C 1-x (0<x<1), and the boundary between the first conductive layer and semiconductor laminate member is formed by a first uneven surface including a number of convexities. Further, the second conductive layer is reflective, and the boundary between the semiconductor laminate member and the second conductive layer is formed by a second uneven surface.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:21
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10F10/00; H10F10/10; H10F10/17; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10F77/315; H10F77/40; H10F77/42; H10F77/48; H10F77/70; H10F77/703; H10F77/707; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/52; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
284 words
A semiconductor photoelectric conversion device, comprising: a light transparent substrate; a light transparent conductive layer formed on the light transparent substrate to serve as a first electrode; a non-single-crystal semiconductor laminate member having a P- or N-type first non-single-crystal semiconductor layer formed on the conductive layer serving as the first electrode, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer formed on the second non-single-crystal semiconductor layer and opposite in conductivity type from the first non-single-crystal semiconductor layer; and a conductive layer formed on the non-single-crystal semiconductor laminate member to serve as a second electrode; wherein the first non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member is formed of Si x C 1-x (where 0>x>1) or a material consisting principally thereof; wherein the surface of the conductive layer serving as the first electrode is a first uneven surface which includes a number of surfaces of acicular convexities arranged two-dimensionally to form a first uneven boundary corresponding to the first uneven surface between the conductive layer serving as the first electrode and the first non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member; wherein the conductive layer serving as the second electrode is reflective; and wherein the surface of the non-single-crystal semiconductor laminate member in contact with the conductive layer serving as a second electrode is a second uneven surface which includes a number of surfaces of convexities arranged two-dimensionally at a mean periodicity larger than that of the acicular convexities of the first unevne surface to thereby form a second uneven boundary corresponding to the second uneven surface between the non-single-crystal semiconductor laminate member and the conductive layer serving as the second electrode.
Claim 2
Dependent Claim
284 words
A semiconductor photoelectric conversion device, comprising: a light transparent substrate; a light transparent conductive layer formed on the light transparent substrate to serve as a first electrode; a non-single-crystal semiconductor laminate member having a P- or N-type first non-single-crystal semiconductor layer formed on the conductive layer serving as the first electrode, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer formed on the second non-single-crystal semiconductor layer and opposite in conductivity type from the first non-single-crystal semiconductor layer; and a conductive layer formed on the non-single-crystal semiconductor laminate member to serve as a second electrode; wherein the first non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member is formed of Si x C 1-x (where 0>x>1) or a material consisting principally thereof; wherein the surface of the conductive layer serving as the first electrode is a first uneven surface which includes a number of surfaces of acicular convexities arranged two-dimensionally to form a first uneven boundary corresponding to the first uneven surface between the conductive layer serving as the first electrode and the first non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member; wherein the conductive layer serving as the second electrode is reflective; and wherein the surface of the non-single-crystal semiconductor laminate member in contact with the conductive layer serving as a second electrode is a second uneven surface which includes a number of surfaces of convexities arranged two-dimensionally at a mean periodicity larger than that of the acicular convexities of the first unevne surface to thereby form a second uneven boundary corresponding to the second uneven surface between the non-single-crystal semiconductor laminate member and the conductive layer serving as the second electrode.
Claim 3
Dependent Claim
32 words
A semiconductor photoelectric conversion device according to claim 1, wherein the second uneven surface is such that one of its convexities corresponds to 3 to 15 convexities of the first uneven surface.
Claim 4
Dependent Claim
28 words
A semiconductor photoelectric conversion device according to claim 1, wherein the acicular convexities of the first uneven surface are arranged at mean periodicity of 1000 to 5000 A.
Claim 5
Dependent Claim
36 words
A semiconductor photoelectric conversion device according to claim 3, wherein the acicular convexities of the first uneven surface have a mean thickness of 500 to 2000 A and a mean length of 300 to 1500 A.
Claim 6
Dependent Claim
139 words
A semiconductor photoelectric conversion device according to claim 1, wherein the conductive layer serving as the first electrode is comprised of a first light transparent conductive layer formed on the light transparent substrate and a second light transparent conductive layer formed on the first light transparent conductive layer, the first light transparent conductive layer being formed of indium oxide, or a metallic oxide consisting principally thereof, and the second light transparent conductive layer being formed of tin oxide, or a metallic oxide consisting principally thereof, wherein the first and second light transparent conductive layers are laminated to form therebetween a third uneven boundary which corresponds to the first uneven boundary, and wherein the second light transparent conductive layer and the first non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member are laminated to form therebetween the first uneven boundary.
Claim 7
Dependent Claim
59 words
A semiconductor photoelectric conversion device according to claim 5, wherein the first light transparent conductive layer of the conductive layer serving as a first electrode has a mean thickness of 400 to 3000 A and the second light transparent conductive layer of the conductive layer serving as a first electrode has a mean thickness of 400 to 3000 A.
Claim 8
Dependent Claim
126 words
A semiconductor photoelectric conversion device according to claim 5, wherein the conductive layer serving as the second electrode is comprised of a third lighttransparent conductive layer and a fourth, reflective conductive layer formed on the third light transparent conductive layer, the third light transparent conductive layer being formed of indium oxide, or a metallic oxide consisting principally thereof, and the fourth, reflective conductive layer being formed of aluminum, silver, or chromium, or a metal consisting principally thereof, wherein the non-single-crystal semiconductor laminate member and the third light transparent conductive layer are laminated to form therebetween the second uneven boundary, and wherein the third light transparent and fourth, reflective conductive layers are laminated to form therebetween a fourth uneven boundary which corresponds to the second uneven boundary.
Claim 9
Dependent Claim
125 words
A semiconductor photoelectric conversion device according to claim 1, wherein the conductive layer serving as the second electrode is comprised of a third light-transparent conductive layer and a fourth, reflective conductive layer formed on the third light transparent conductive layer, the third light transparent conductive layer being formed indium oxide, or a metallic oxide consisting principally thereof, and the fourth, reflective conductive layer being formed of aluminum, silver, or chromium, or a metal consisting principally thereof, wherein the non-single-crystal semiconductor laminate member and the third light transparent conductive layer are laminated to form therebetween the second uneven boundary, and wherein the third light transparent and fourth, reflective conductive layers are laminated to form therebetween a third uneven boundary which corresponds to the second uneven boundary.
Claim 10
Independent Claim
429 words
A method of making a semiconductor photoelectric conversion device, comprising the steps of: forming a conductive layer serving as a first electrode on a light-transparent substrate; forming, on the conductive layer serving as a first electrode, a non-single-crystal semiconductor laminate member having a P- or N-type first non-single-crystal semiconductor layer formed on the conductive layer serving as a first electrode, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer formed on the second non-single-crystal semiconductor layer and opposite in conductivity from the first non-single-crystal semiconductor layer; and forming a conductive layer serving as a second electrode on the non-single-crystal semiconductor laminate member; wherein the step of forming the conductive layer serving as a first electrode includes the step of forming, on the light-transparent substrate, a light-transparent conductive layer, as the conductive layer serving as a first electrode, the surface of which is formed by a first uneven surface which includes a number of surfaces of acicular convexities arranged two-dimensionally, wherein the step of forming the non-single-crystal semiconductor laminate member includes the step of depositing, on the first uneven surface of the conductive layer serving as a first electrode, by a CVD method (chemical vapor depositing method), a P- or N-type non-single-crystal semiconductor layer of Si x C 1-x (where 0<x<1), as the first non-single-crystal semiconductor layer, which has a surface formed by a second uneven surface and forms between it and the conductive layer serving as a first electrode a first uneven boundary corresponding to the first uneven surface, the step of depositing, as the second non-single-crystal semiconductor layer, by a CVD method, on the second uneven surface of the non-single-crystal semiconductor laminate member, a non-single-crystal semiconductor layer having a surface formed by a third uneven surface which includes a number of surfaces of convexities arranged two-dimensionally at a mean periodicity larger than that of the acicular convexities of the first uneven surface, and the step of depositing, as the third non-single-crystal semiconductor layer, by a CVD method, on the third uneven surface of the second non-single-crystal semiconductor layer, a non-single-crystal semiconductor layer having a surface formed by a fourth uneven surface which corresponds to the third uneven surface, and wherein the step of forming the conductive layer serving as a second electrode includes a step of forming a reflective conductive layer, as the conductive layer serving as a second electrode, on the fourth uneven surface in a manner to form between it and the third non-single-crystal semiconductor layer a second uneven boundary corresponding to the fourth uneven surface.
Claim 11
Independent Claim
429 words
A method of making a semiconductor photoelectric conversion device, comprising the steps of: forming a conductive layer serving as a first electrode on a light-transparent substrate; forming, on the conductive layer serving as a first electrode, a non-single-crystal semiconductor laminate member having a P- or N-type first non-single-crystal semiconductor layer formed on the conductive layer serving as a first electrode, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer formed on the second non-single-crystal semiconductor layer and opposite in conductivity from the first non-single-crystal semiconductor layer; and forming a conductive layer serving as a second electrode on the non-single-crystal semiconductor laminate member; wherein the step of forming the conductive layer serving as a first electrode includes the step of forming, on the light-transparent substrate, a light-transparent conductive layer, as the conductive layer serving as a first electrode, the surface of which is formed by a first uneven surface which includes a number of surfaces of acicular convexities arranged two-dimensionally, wherein the step of forming the non-single-crystal semiconductor laminate member includes the step of depositing, on the first uneven surface of the conductive layer serving as a first electrode, by a CVD method (chemical vapor depositing method), a P- or N-type non-single-crystal semiconductor layer of Si x C 1-x (where 0<x<1), as the first non-single-crystal semiconductor layer, which has a surface formed by a second uneven surface and forms between it and the conductive layer serving as a first electrode a first uneven boundary corresponding to the first uneven surface, the step of depositing, as the second non-single-crystal semiconductor layer, by a CVD method, on the second uneven surface of the non-single-crystal semiconductor laminate member, a non-single-crystal semiconductor layer having a surface formed by a third uneven surface which includes a number of surfaces of convexities arranged two-dimensionally at a mean periodicity larger than that of the acicular convexities of the first uneven surface, and the step of depositing, as the third non-single-crystal semiconductor layer, by a CVD method, on the third uneven surface of the second non-single-crystal semiconductor layer, a non-single-crystal semiconductor layer having a surface formed by a fourth uneven surface which corresponds to the third uneven surface, and wherein the step of forming the conductive layer serving as a second electrode includes a step of forming a reflective conductive layer, as the conductive layer serving as a second electrode, on the fourth uneven surface in a manner to form between it and the third non-single-crystal semiconductor layer a second uneven boundary corresponding to the fourth uneven surface.
Claim 12
Dependent Claim
29 words
A method according to claim 9, wherein the third uneven surface is such that one of its convexities correspond to 3 to 15 convexities of the first uneven surface.
Claim 13
Dependent Claim
25 words
A method according to claim 9, wherein the acicular convexities of the first uneven surface are arranged at mean periodicity of 1000 to 5000 A.
Claim 14
Dependent Claim
33 words
A method according to claim 9, wherein the acicular convexities of the first uneven surface have a mean thickness of 500 to 2000 A and a mean length of 300 to 1500 A.
Claim 15
Dependent Claim
136 words
A method according to claim 9, wherein the conductive layer for the first electrode is comprised of a first light transparent conductive layer formed on the light transparent substrate and a second light transparent conductive layer formed on the first light transparent conductive layer, the first light transparent conductive layer being formed of indium oxide, or a metallic oxide consisting principally thereof, and the second light transparent conductive layer being formed of tin oxide, or a metallic oxide consisting principally thereof, wherein the first and second light transparent conductive layers are laminated to form therebetween a third and uneven boundary which corresponds to the first uneven boundary, and wherein the second light transparent conductive layer and the first non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member are laminated to form therebetween the first uneven boundary.
Claim 16
Dependent Claim
56 words
A method according to claim 13, wherein the first light transparent conductive layer of the conductive layer serving as a first electrode has a mean thickness of 400 to 3000 A and the second light transparent conductive layer of the conductive layer serving as a first electrode has a mean thickness of 400 to 3000 A.
Claim 17
Dependent Claim
123 words
A method according to claim 13, wherein the conductive layer serving as the second electrode is comprised of a third light-transparent conductive layer and a fourth, reflective conductive layer formed on the third light transparent conductive layer, the third light transparent conductive layer being formed of indium oxide, or a metallic oxide consisting principally thereof, and the fourth, reflective conductive layer being formed of aluminum, silver, or chromium, or a metal consisting principally thereof, wherein the non-single-crystal semiconductor laminate member and the third light transparent conductive layer are laminated to form therebetween the second uneven boundary, and wherein the third light transparent and fourth, reflective conductive layers are laminated to form therebetween a fourth uneven boundary which corresponds to the second uneven boundary.
Claim 18
Dependent Claim
123 words
A method according to claim 9, wherein the conductive layer serving as the second electrode is comprised of a third light-transparent conductive layer and a fourth, reflective conductive layer formed on the third light transparent conductive layer, the third light transparent conductive layer being formed of indium oxide, or a metallic oxide consisting principally thereof, and the fourth, reflective conductive layer being formed of aluminum, silver, or chromium, or a metal consisting principally thereof, wherein the non-single-crystal semiconductor laminate member and the third light transparent conductive layer are laminated to form therebetween the second uneven boundary, and wherein the third light transparent and fourth, reflective conductive layers are laminated to form therebetween a third uneven boundary which corresponds to the second uneven boundary.
References Cited (Backward Citations)
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