US4450316A
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US
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Amorphous silicon photovoltaic device having two-layer transparent electrode
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1982-07-19
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Granted: 1984-05-22
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Expires: 2002-07-19
Abstract
Abstract An amorphous silicon semiconductor of the general formula: a-Si.sub.(1-x-y) C x N y containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when it is used as a P-type or N-type layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a two-layer film structure of ITO and SnO 2 as a transparent electrode for the photovoltaic device, with the SnO 2 layer contacting the P or N layer. The improvement is particularly marked in the case of heterojunction photovoltaic devices.
Inventors
- 👤 Yoshihiro Hamakawa
- 👤 Yoshihisa Tawada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:53
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F10/00; H10F10/10; H10F10/17; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/20; H10F77/244; H10F77/247; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S420/00; Y10S420/903
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
68 words
In an amorphous silicon derivative PIN junction photovoltaic device, the improvement comprising a two layer transparent electrode consisting of ITO and SnO 2 layers that are provided on the P or N layer located on the light impinging side so that the SnO 2 layer is in contact with said P or N layer, said SnO 2 layer having a thickness of about 30 to about 500 angstroms.
Claim 2
Dependent Claim
68 words
In an amorphous silicon derivative PIN junction photovoltaic device, the improvement comprising a two layer transparent electrode consisting of ITO and SnO 2 layers that are provided on the P or N layer located on the light impinging side so that the SnO 2 layer is in contact with said P or N layer, said SnO 2 layer having a thickness of about 30 to about 500 angstroms.
Claim 3
Dependent Claim
21 words
The photovoltaic device of claim 1, wherein said SnO 2 layer has a thickness of about 50 to about 500 angstroms.
Claim 4
Dependent Claim
67 words
The photovoltaic device of claim 1, wherein the amorphous semiconductor of said P or N layer which contacts the SnO 2 layer is a member selected from the group consisting of an amorphous semiconductor of the general formula: a-Si.sub.(1-x) C x , an amorphous semiconductor of the general formula: a-Si.sub.(1-y) N y , and an amorphous semiconductor of the general formula: a-Si.sub.(1-x-y) C x N y .
Claim 5
Dependent Claim
36 words
The photovoltaic device of claim 1, wherein the amorphous semiconductor of said P or N layer which contacts the SnO 2 layer is an amorphous semiconductor of the general formula: a-Si.sub.(1-x-y) C x N y .
References Cited (Backward Citations)
US4109271A
Cited
JPS5529154A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1987-05-22 | 1987-11-21 | 1988-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-22 | 1991-11-21 | 1992-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-22 | 1995-11-21 | 1996-05-22 | $7700.00 | Window Closed / Lapsed |