Patent US4597826A successfully refreshed from Google Patents.
US4597826A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming patterns
Assignee: Fujitsu Ltd
•
Filing: 1984-12-26
•
Granted: 1986-07-01
•
Expires: 2004-12-26
Abstract
Abstract A method is disclosed of forming a fine pattern on a substrate, in which an etching mask pattern is formed on a layer of material of a pattern to be formed, an overlying layer is deposited on the pattern material layer and the mask pattern, and thereafter, the overlying layer and the pattern material layer are etched by ion etching. This method makes it possible, due to the pattern-widening effect caused by the deposition of the overlying layer and by the use of ion etching, to form a pattern having a gap smaller than 0.5 μm or a contiguous-disk pattern having a period of 2 μm or less by photolithography having a 1 μm resolution. It is also possible to form a pattern adapted to enable an easy planing process, by utilizing a difference in etching rates between the mask pattern and the overlying layer. An apparatus used for carrying out the pattern forming method comprises film layer forming means and ion etching means, whereby the overlying layer forming step and the ion etching step can be successively performed by using one and the same apparatus.
Inventors
- 👤 Teiji Majima
- 👤 Hiromichi Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:21
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; H01; H01F; H01F41/00; H01F41/32; H01F41/34; H10P76/405; H10P76/4083; H10P76/4088
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
128 words
A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) depositing a layer of a pattern material on the surface of said substate; (b) forming an etching mask pattern having a first gap on said pattern material layer; (c) depositing a pattern-widening overlying layer which substantially maintains the topography of the mask pattern on the exposed surfaces of said pattern material layer and on the mask pattern, thereby forming a second gap which is smaller than the first gap; and (d) etching said overlying layer and said pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said pattern having said fine gap which is smaller than said second gap from said pattern material layer.
Claim 2
Independent Claim
128 words
A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) depositing a layer of a pattern material on the surface of said substate; (b) forming an etching mask pattern having a first gap on said pattern material layer; (c) depositing a pattern-widening overlying layer which substantially maintains the topography of the mask pattern on the exposed surfaces of said pattern material layer and on the mask pattern, thereby forming a second gap which is smaller than the first gap; and (d) etching said overlying layer and said pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said pattern having said fine gap which is smaller than said second gap from said pattern material layer.
Claim 3
Dependent Claim
20 words
A method according to claim 1, wherein step (b) includes forming said mask pattern from a photersist material by photolithography.
Claim 4
Dependent Claim
17 words
A method according to claim 1, wherein step (c) includes depositing said overlying layer by vapor deposition.
Claim 5
Dependent Claim
36 words
A method according to claim 3, wherein step (c) includes performing the vapor deposition of said overlying layer in a direction which forms an oblique angle with a line normal to the surface of said substrate.
Claim 6
Dependent Claim
16 words
A method according to claim 1, wherein step (c) includes depositing said overlying layer by sputtering.
Claim 7
Dependent Claim
28 words
A method according to claim 1, wherein step (c) includes forming said overlying layer of a material which is different from the material of said pattern material layer.
Claim 8
Dependent Claim
29 words
A method according to claim 1, wherein step (c) includes forming said overlying layer of a material which is the same as the material of said pattern material layer.
Claim 9
Dependent Claim
36 words
A method according to claim 1, wherein step (a) includes depositing a permalloy (NiFe) pattern material layer, and wherein step (d) includes forming a permalloy pattern for magnetic bubble propagation in a magnetic bubble memory device.
Claim 10
Dependent Claim
16 words
A method according to claim 8, wherein step (c) includes depositing a copper (Cu) overlying layer.
Claim 11
Dependent Claim
16 words
A method according to claim 8, wherein step (c) includes depositing a permalloy (NiFe) overlying layer.
Claim 12
Dependent Claim
46 words
A method according to claim 1, wherein step (b) includes forming said first gap of the mask pattern with a width of approximately 1 μm or more, and step (d) includes forming the gap of said pattern with a width of less than approximately 0.5 μm.
Claim 13
Independent Claim
195 words
A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) forming an underlying mask pattern having a thickness on the surface of said substrate, said underlying mask pattern having an edge defining a part of an edge portion of said pattern, except for the edge portions of said pattern which define said gap therebetween; (b) depositing a layer of a pattern material having a thickness which is less than the thickness of the underlying mask pattern on the exposed surface of said substrate and said underlying mask pattern; (c) forming an etching mask pattern having a first gap on said pattern material layer; (d) depositing a pattern-widening overlying layer which substantially maintains the topography of the mask pattern on the exposed surfaces of said pattern material layer and the etching mask pattern thereby forming a second smaller gap which is smaller than the first gap; (e) etching said overlying layer and said pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said pattern having said fine gap from said pattern material layer, said fine gap being smaller than said second gap.
Claim 14
Independent Claim
195 words
A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) forming an underlying mask pattern having a thickness on the surface of said substrate, said underlying mask pattern having an edge defining a part of an edge portion of said pattern, except for the edge portions of said pattern which define said gap therebetween; (b) depositing a layer of a pattern material having a thickness which is less than the thickness of the underlying mask pattern on the exposed surface of said substrate and said underlying mask pattern; (c) forming an etching mask pattern having a first gap on said pattern material layer; (d) depositing a pattern-widening overlying layer which substantially maintains the topography of the mask pattern on the exposed surfaces of said pattern material layer and the etching mask pattern thereby forming a second smaller gap which is smaller than the first gap; (e) etching said overlying layer and said pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said pattern having said fine gap from said pattern material layer, said fine gap being smaller than said second gap.
Claim 15
Dependent Claim
55 words
A method according to claim 12, wherein step (c) includes forming said etching mask pattern on a portion of said underlying mask pattern which is formed on said pattern material layer, further comprising the step (f) of removing a useless portion of the pattern material layer remaining on the underlying mask pattern after step (e).
Claim 16
Dependent Claim
64 words
A method according to claim 13, wherein step (a) includes forming said underlying mask pattern of a material having selective etching characteristics with respect to the etching characteristics of the pattern material layer, further comprising the sequential steps of removing the underlying layer by etching after step (f), and removing a useless portion of the pattern material layer remaining on the underlying mask pattern.
Claim 17
Dependent Claim
51 words
A method according to claim 13, further comprising the sequential steps of depositing a covering material on the exposed surfaces of the substrate to create a planar exposed surface, and removing a useless portion of the pattern material layer remaining on the underlying mask pattern and said covering material by etching.
Claim 18
Independent Claim
172 words
A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) forming a layer of a pattern material on the surface of said substrate; (b) forming a first etching mask pattern having a first gap on said pattern material layer; (c) depositing an overlying layer which substantially maintains the topography of the first etching mask on the exposed surfaces of said pattern material layer and said first mask pattern, thereby forming a second gap which is smaller than the first gap; (d) etching said overlying layer and said pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said fine gap which is smaller than said second gap in said pattern material layer; (f) forming a second mask pattern on the pattern material layer having said fine gap, so as to cover said fine gap and the region corresponding to said pattern to be formed; and (g) etching the exposed region of said pattern material layer to form said pattern.
Claim 19
Independent Claim
172 words
A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) forming a layer of a pattern material on the surface of said substrate; (b) forming a first etching mask pattern having a first gap on said pattern material layer; (c) depositing an overlying layer which substantially maintains the topography of the first etching mask on the exposed surfaces of said pattern material layer and said first mask pattern, thereby forming a second gap which is smaller than the first gap; (d) etching said overlying layer and said pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said fine gap which is smaller than said second gap in said pattern material layer; (f) forming a second mask pattern on the pattern material layer having said fine gap, so as to cover said fine gap and the region corresponding to said pattern to be formed; and (g) etching the exposed region of said pattern material layer to form said pattern.
Claim 20
Independent Claim
126 words
A method for forming a contiguous-element pattern including pattern elements on a substrate, so that adjacent pattern elements have a fine gap therebetween, comprising the steps of: (a) depositing a layer of pattern material on the surface of said substrate; (b) forming an etching mask pattern having a first gap on said pattern material layer; (c) depositing a pattern-widening overlying layer which substantially maintains the topography of the mask pattern on the exposed surfaces of said pattern material layer and the mask pattern, thereby forming a second gap which is smaller than the first gap; and (d) etching said overlying layer and said pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said contiguous-element pattern from said pattern material layer.
Claim 21
Independent Claim
126 words
A method for forming a contiguous-element pattern including pattern elements on a substrate, so that adjacent pattern elements have a fine gap therebetween, comprising the steps of: (a) depositing a layer of pattern material on the surface of said substrate; (b) forming an etching mask pattern having a first gap on said pattern material layer; (c) depositing a pattern-widening overlying layer which substantially maintains the topography of the mask pattern on the exposed surfaces of said pattern material layer and the mask pattern, thereby forming a second gap which is smaller than the first gap; and (d) etching said overlying layer and said pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said contiguous-element pattern from said pattern material layer.
Claim 22
Dependent Claim
26 words
A method according to claim 17, wherein said contiguous-element pattern is a contiguous disk pattern, and wherein step (b) includes forming a discontiguous-disk etching mask pattern.
Claim 23
Independent Claim
165 words
A method for forming a contiguous-element pattern for magnetic bubble propagation, comprising the steps of (a) forming an ion-implantation mask pattern on a surface of a magnetic thin film in which magnetic bubbles can be propagated, and (b) implanting ions in the exposed surface of said magnetic thin film, wherein said step (a) comprises the substeps of: (1) depositing a layer of pattern material on the surface of said magnetic thin film; (2) forming an etching mask pattern having a first gap on said mask pattern material layer; (3) depositing a pattern-widening overlying layer which substantially maintains the topography of the etching mask pattern on the exposed surfaces of said mask pattern material layer and said etching mask pattern, thereby forming a second gap which is smaller than said first gap; and (4) etching said overlying layer and said mask pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said ion-implantation mask pattern from said mask pattern material layer.
Claim 24
Independent Claim
165 words
A method for forming a contiguous-element pattern for magnetic bubble propagation, comprising the steps of (a) forming an ion-implantation mask pattern on a surface of a magnetic thin film in which magnetic bubbles can be propagated, and (b) implanting ions in the exposed surface of said magnetic thin film, wherein said step (a) comprises the substeps of: (1) depositing a layer of pattern material on the surface of said magnetic thin film; (2) forming an etching mask pattern having a first gap on said mask pattern material layer; (3) depositing a pattern-widening overlying layer which substantially maintains the topography of the etching mask pattern on the exposed surfaces of said mask pattern material layer and said etching mask pattern, thereby forming a second gap which is smaller than said first gap; and (4) etching said overlying layer and said mask pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said ion-implantation mask pattern from said mask pattern material layer.
Claim 25
Dependent Claim
27 words
A method according to claim 19, wherein substep (2) includes forming a discontiguous-disk etching mask pattern, and wherein step (a) includes forming a contiguous-disk ion-implantation mask pattern.
Claim 26
Dependent Claim
25 words
A method according to claim 19, wherein step (a) inlcudes forming a contiguous-disk ion-implantation mask pattern having a pattern period of 2 μm or less.
Claim 27
Dependent Claim
20 words
A method according to claim 19, wherein step (a) includes forming said contiguous-disk ion-implantation mask pattern layer of gold (Au).
Claim 28
Dependent Claim
17 words
A method according to claim 22, wherein substep (3) includes depositing an overlying layer of copper (cu).
Claim 29
Dependent Claim
17 words
A method according to claim 22, wherein substep (3) includes depositing an overlying layer of permalloy (NiFe).
Claim 30
Independent Claim
138 words
A method forming a pattern of a material on a substrate, comprising the steps of: (a) depositing a layer of said pattern material on the surface of said substrate; (b) forming an etching mask pattern of a material having a first etching rate on portions of said material layer substantially corresponding to said pattern to be formed; (c) depositing an overlying layer of material having a second etching rate which is larger than the first etching rate of the material of said mask pattern on the exposed surfaces of said pattern material layer and the mask pattern overlying layer substantially maintaining the topography of the etching mask pattern; and (d) etching said overlying layer and said pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said pattern from said pattern material layer.
Claim 31
Independent Claim
138 words
A method forming a pattern of a material on a substrate, comprising the steps of: (a) depositing a layer of said pattern material on the surface of said substrate; (b) forming an etching mask pattern of a material having a first etching rate on portions of said material layer substantially corresponding to said pattern to be formed; (c) depositing an overlying layer of material having a second etching rate which is larger than the first etching rate of the material of said mask pattern on the exposed surfaces of said pattern material layer and the mask pattern overlying layer substantially maintaining the topography of the etching mask pattern; and (d) etching said overlying layer and said pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said pattern from said pattern material layer.
Claim 32
Dependent Claim
17 words
A method according to claim 25, wherein step (c) includes depositing an overlying layer of gold (Au).
References Cited (Backward Citations)
US3563809A
Cited
US4053349A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-30 | 1989-12-30 | 1990-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-30 | 1993-12-30 | 1994-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-30 | 1997-12-30 | 1998-07-01 | $7700.00 | Window Closed / Lapsed |