Abstract A photodetector includes a cap layer over an absorptive layer with the P-N junction formed in the absorptive layer by diffusion of conductivity modifiers from the cap layer. If this diffusion extends too far into the absorptive layer, the detector is rendered useless. The invention includes a photodetector with a buffer layer between the absorptive and cap layers. The concentration of conductivity modifiers is substantially constant in the cap layer, decreases with distance in the buffer layer from the cap layer and extends into the absorptive layer. The invention also includes a method of making this device which includes the steps of forming a buffer layer over the absorptive layer, forming a cap layer over the buffer layer and diffusing the opposite type conductivity modifiers from the cap layer into the buffer and absorptive layers.
A photodetector for light of a particular wavelength comprising: a first layer of first conductivity type; an absorptive layer which is composed of a material which absorbs light at said wavelength and which includes a first region having substantially intrinsic conductivity type adjacent to the first layer and a second region having the opposite conductivity type to that of the first layer; a buffer layer adjacent to the second region; a cap layer overlying the buffer layer; and means for providing electrical contact to the cap and first layers; the buffer and cap layers having the opposite conductivity type to that of the first layer with the cap layer having a substantially constant concentration of opposite type conductivity modifiers and the buffer layer having a decreasing concentration gradient of opposite type conductivity modifiers from the cap layer to the absorptive layer.
Claim 2
Dependent Claim
141 words
A photodetector for light of a particular wavelength comprising: a first layer of first conductivity type; an absorptive layer which is composed of a material which absorbs light at said wavelength and which includes a first region having substantially intrinsic conductivity type adjacent to the first layer and a second region having the opposite conductivity type to that of the first layer; a buffer layer adjacent to the second region; a cap layer overlying the buffer layer; and means for providing electrical contact to the cap and first layers; the buffer and cap layers having the opposite conductivity type to that of the first layer with the cap layer having a substantially constant concentration of opposite type conductivity modifiers and the buffer layer having a decreasing concentration gradient of opposite type conductivity modifiers from the cap layer to the absorptive layer.
Claim 3
Dependent Claim
20 words
The photodetector of claim 1 wherein the thickness of the buffer layer is less than that of the cap layer.
Claim 4
Dependent Claim
28 words
The photodetector of claim 2 wherein the first layer is N-type InP, the absorptive layer is an InGaAs alloy, and the buffer and cap layers are P-type InP.
Claim 5
Dependent Claim
19 words
The photodetector of claim 3 wherein the first layer is a substrate which supports the remainder of the photodetector.