Display with a number of light-emitting semiconductor components

Claim 2

An array of light-active semiconductor components for light-emitting or light-detecting, comprising: a plurality of individual light-active semiconductor components in an at least essentially monocrystalline semiconductor material substrate transmissive to light, a front side of said substrate being provided as a light transmissive surface on which at a spacing from one another, respective front side electric contact electrodes of said individual components are provided; on a rear side of said substrate corresponding individual respective counter electrodes being provided in alignment relative to said respective front side electrodes; in said substrate, a light-active zone being disposed substantially at a PN junction in proximity to said front side; and at intervals between said counter electrodes, regions of said semiconductor material of said substrate zone bordering on the rear side and rearwardly of the PN junction being strongly absorbing for generated light relative to a remainder of the substrate.

Claim 3

An array according to claim 1 wherein said semiconductor material of said substrate in said regions at said intervals having at least essentially an amorphous property, an essentially continuous transition from an essentially monocrystalline material of said substrate to said regions with said amorphous property being present.

Claim 4

An array according to claim 2 wherein a transition from said essentially monocrystalline state of said material of said substrate to said essentially amorphous property of said regions has a progression corresponding to an implantation.

Claim 5

An array according to claim 2 wherein a depth of said regions having said essentially amorphous property measured in a direction perpendicular to said rear side of said substrate is one to two wavelengths of said generated light in said material of said substrate.

Claim 6

An array according to claim 1 wherein said electrodes on said front side of said substrate have openings forming an areawide distributed perforation of said electrodes, said openings having diameters sufficiently small such that light in a wavelength range of said transmission capability of said material of said substrate undergoes diffraction upon passage through said openings.

Claim 7

A light-active semiconductor component system for light-emitting or light-detecting, comprising: a substantially monocrystalline substrate transmissive to light and having located therein a plurality of light-active semiconductor components; each light-active semiconductor component including a front side first electrode on a front side of said substrate and a corresponding second electrode at a rear side of said substrate opposite said front side first electrode; a light-active zone substantially between said first and second electrodes and comprising a pn junction; isolation means provided in said substrate between adjacent light-active semiconductor components; and regions rearwardly of the PN junction at intervals between said rear side second electrodes and beginning at said rear side of said substrate and proceeding towards said PN junction over a distance substantially less than a thickness of said substrate, a material of the semiconductor being substantially amorphous in said regions so that it is strongly absorbing for generated light relative to a remainder of the substrate and has random small jumps of a complex refractive index so that said refractive index substantially continuously varies, whereby light at said adjacent light-active zones and received at said regions in said intervals is substantially absorbed.

Claim 8

A light-active semiconductor component system for light-emitting or light-detecting, comprising: a substantially monocrystalline substrate transmissive to light and having located therein a plurality of light-active semiconductor components; each light-active semiconductor component including a front side first electrode on a front side of said substrate and a corresponding second electrode at a rear side of said substrate opposite said front side first electrode; a light-active zone substantially between said first and second electrodes and comprising a pn junction; isolation means provided in said substrate between adjacent light-active semiconductor components; and regions rearwardly of the PN junction at intervals between said rear side second electrodes and beginning at said rear side of said substrate and proceeding towards said PN junction over a distance substantially less than a thickness of said substrate, a material of the semiconductor being substantially amorphous in said regions so that it is strongly absorbing for generated light relative to a remainder of the substrate and has random small jumps of a complex refractive index so that said refractive index substantially continuously varies, whereby light at said adjacent light-active zones and received at said regions in said intervals is substantially absorbed.