US4595428A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing high-aspect ratio hollow diffused regions in a semiconductor body
Assignee: Fairchild Semiconductor Corp
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Filing: 1984-01-03
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Granted: 1986-06-17
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Expires: 2004-01-03
Abstract
Abstract A semiconductor device and a method for its preparation are disclosed, wherein a body of semiconducting material has at least one bore extending completely therethrough, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, this bore being defined by a region of the semiconducting material in the recrystallized state having therein throughout the region a substantially constant uniform concentration level of atoms of at least one metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin in addition to the initial content of the semiconducting material.
Inventors
- 👤 Thomas R. Anthony
- 👤 Douglas E. Houston
- 👤 James A. Loughran
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:35
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/14; H10P32/1408; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S438/00; Y10S438/94
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
91 words
In the method of preparing a semiconductor device wherein a semiconductor body is provided with a bore by multipulse laser drilling, said bore having a diameter of less than about 1.5 mils and extending completely through said body with the average length-to-diameter ratio thereof being at least about 6:1, the improvement wherein a molten metal-rich droplet is migrated along the inside surface of the bore throughout the length of the bore, said droplet containing atoms of metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver, and tin.
Claim 2
Dependent Claim
91 words
In the method of preparing a semiconductor device wherein a semiconductor body is provided with a bore by multipulse laser drilling, said bore having a diameter of less than about 1.5 mils and extending completely through said body with the average length-to-diameter ratio thereof being at least about 6:1, the improvement wherein a molten metal-rich droplet is migrated along the inside surface of the bore throughout the length of the bore, said droplet containing atoms of metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver, and tin.
Claim 3
Dependent Claim
16 words
The improvement of claim 1 wherein the migration is accomplished by means of a thermal gradient.
Claim 4
Dependent Claim
17 words
The improvement of claim 1 wherein the migration is accomplished by means of an electrical potential gradient.
Claim 5
Dependent Claim
21 words
The improvement of claim 1 wherein the material of the semiconductor body is silicon and the molten droplet contains aluminum atoms.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-16 | 1989-12-16 | 1990-06-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-16 | 1993-12-16 | 1994-06-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-16 | 1997-12-16 | 1998-06-17 | $7700.00 | Window Closed / Lapsed |