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US4594330A Expired / Lapsed US ⏱️ 0.0 years remaining

Fine amorphous powder and process for preparing fine powdery mixture of silicon nitride and silicon carbide

Assignee: Mitsubishi Gas Chemical Co Inc
•
Filing: 1985-03-15
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Granted: 1986-06-10
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Expires: 2005-03-15
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Abstract

Abstract Fine spherical amorphous powder represented by the general formula: SiCxNyHz wherein 0.1<x<2.0, 0.1<y<1.5 and 0<z<4, is prepared by vapor phase oxidation of organosilicon compound substantially free from halogen atoms and oxygen atoms. An ultimately crystalline, uniform and fine powder of silicon nitride and silicon carbide is prepared by heat treatment of the fine spherical amorphous powder. The powder and the crystalline uniform, and fine powder are used as raw materials for composite ceramics and as functional materials for solar cell.

Inventors

  • 👤 Takashi Suzuki
  • 👤 Takamasa Kawakami
  • 👤 Takeshi Koyama
  • 👤 Masami Orisaku
  • 👤 Kansei Izaki
  • 👤 Rieko Nakano
  • 👤 Akira Mori

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 11:18
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/515; C04B35/58; C04B35/584; C04B35/589; C01; C01B; C01B21/00; C01B21/06; C01B21/068; C01B21/082; C01B21/087; C01B32/00; C01B32/90; C01B32/914; C01B32/956; C01B32/963; C01B32/977; C04B35/56; C04B35/565; C01P; C01P2002/00; C01P2002/02; C01P2002/70; C01P2002/72; C01P2002/80; C01P2002/82; C01P2004/00; C01P2004/01; C01P2004/03; C01P2004/60; C01P2004/61; C01P2006/00; C01P2006/80

Claims Analysis

Total Claims: 22
Claim 1
Independent Claim 18 words
Fine, spherical, substanitally halogen-free and oxygen-free amorphous powder having the general formula: SiCxNyHz wherein 0.1<x<2.0, 0.1<y<1.5 and 0<z<4.
Claim 2
Dependent Claim 18 words
Fine, spherical, substanitally halogen-free and oxygen-free amorphous powder having the general formula: SiCxNyHz wherein 0.1<x<2.0, 0.1<y<1.5 and 0<z<4.
Claim 3
Dependent Claim 39 words
A process for preparing fine, spherical, amorphous powder represented by the general formula: SiCxNyHz wherein 0.1<x<2.0, 0.1<y<1.5 and 0<z<4, which comprises conducting a vapor phase reaction of a nitrogen-containing organosilicon compound substantially free from halogen atoms and oxygen atoms.
Claim 4
Dependent Claim 39 words
A process for preparing fine, spherical, amorphous powder represented by the general formula: SiCxNyHz wherein 0.1<x<2.0, 0.1<y<1.5 and 0<z<4, which comprises conducting a vapor phase reaction of a nitrogen-containing organosilicon compound substantially free from halogen atoms and oxygen atoms.
Claim 5
Dependent Claim 61 words
A process according to claim 2, wherein the nitrogen-containing organosilicon compound is a silazane compound represented by the general formula: [R.sup.1 R.sup.2 R.sup.3 Si].sub.2 NR.sup.4 or --R.sup.1 R.sup.2 Si--NR.sup.3].sub.n wherein R 1 to R 4 are hydrogen atoms, alkyl groups, aryl groups or phenyl groups, excluding R 1 to R 4 being hydrogen atoms simultaneously and n is 3 or 4.
Claim 6
Dependent Claim 51 words
A process according to claim 2, wherein the nitrogen-containing organosilicon compound is an amino-organosilicon compound represented by the general formula: RnSi(NR'R").sub.m wherein R, R' and R" are hydrogen atoms, alkyl group, aryl groups and phenyl groups, excluding R, R', and R" being hydrogen atoms simultaneously, and n=0 to 3 and m=4-n.
Claim 7
Dependent Claim 43 words
A process according to claim 2, wherein the nitrogen-containing organosilicon compound is a silane compound represented by the general formula: RnSi(CN).sub.m wherein R is a hydrogen atom, an alkyl group, an aryl group or a phenyl group, and n=0 to 3 and m=4-n.
Claim 8
Dependent Claim 120 words
A process for preparing fine spherical amorphous powder represented by the general formula: SiCxNyHz wherein 0.1<x<2.0, 0.1<y<1.5 and 0<z<4, which comprises conducting a vapor phase reaction of (1) an organosilicon compound represented by the following general formula R 2n+2 (Si) n , wherein R is a hydrogen atom, an alkyl group, an aryl group, or a phenyl group, excluding Rs being hydrogen atoms simultaneously, and n is 1 to 4 (2) organosilicon compound represented by the following general formula R 3 Si--R'--R 2 Si) m R, wherein R is a hydrogen atom, an alkyl group, an aryl group, or a phenyl group; R' is a methylene group, an ethylene group or a phenylene group, and m is 1 to 2.
Claim 9
Dependent Claim 120 words
A process for preparing fine spherical amorphous powder represented by the general formula: SiCxNyHz wherein 0.1<x<2.0, 0.1<y<1.5 and 0<z<4, which comprises conducting a vapor phase reaction of (1) an organosilicon compound represented by the following general formula R 2n+2 (Si) n , wherein R is a hydrogen atom, an alkyl group, an aryl group, or a phenyl group, excluding Rs being hydrogen atoms simultaneously, and n is 1 to 4 (2) organosilicon compound represented by the following general formula R 3 Si--R'--R 2 Si) m R, wherein R is a hydrogen atom, an alkyl group, an aryl group, or a phenyl group; R' is a methylene group, an ethylene group or a phenylene group, and m is 1 to 2.
Claim 10
Dependent Claim 19 words
A process according to claim 2, wherein the vapor phase reaction is carried out at 600° to 1,600° C.
Claim 11
Dependent Claim 31 words
A process according to claim 2, wherein the vapor phase reaction is carried out in a non-oxidative gas atmosphere of Ar, He, N 2 , NH 3 or H 2 .
Claim 12
Dependent Claim 33 words
A process according to claim 8, wherein the amount of NH 3 is in an atomic ratio of N in NH 3 to Si in the starting compound, N/Si, of less than 10.
Claim 13
Dependent Claim 33 words
A process according to claim 8, wherein the amount of H 2 is in an atomic ratio of H in H 2 to Si in the starting compound, H/Si, of less than 100.
Claim 14
Dependent Claim 40 words
A process for preparing a fine powdery mixture of crystalline silicon nitride and crystalline silicon carbide which comprises heat treating fine, spherical, substantially halogen-free and oxygen-free amorphous powder represented by the general formula: SiCxNyHz wherein 0.1<x<2.0, 0.1<y 1.5 and 0<z<4.
Claim 15
Dependent Claim 40 words
A process for preparing a fine powdery mixture of crystalline silicon nitride and crystalline silicon carbide which comprises heat treating fine, spherical, substantially halogen-free and oxygen-free amorphous powder represented by the general formula: SiCxNyHz wherein 0.1<x<2.0, 0.1<y 1.5 and 0<z<4.
Claim 16
Dependent Claim 48 words
A process for preparing a fine powdery mixture of at least one of crystalline silicon nitride and crystalline silicon carbide, the remainder being amorphous powder, which comprises heat treating fine, spherical, substantially halogen-free and oxygen-free amorphous powder represented by the general formula: SiCxNyHz wherein 0.1<x<2.0, 0.1<y<1.5 and 0<z<4.
Claim 17
Dependent Claim 48 words
A process for preparing a fine powdery mixture of at least one of crystalline silicon nitride and crystalline silicon carbide, the remainder being amorphous powder, which comprises heat treating fine, spherical, substantially halogen-free and oxygen-free amorphous powder represented by the general formula: SiCxNyHz wherein 0.1<x<2.0, 0.1<y<1.5 and 0<z<4.
Claim 18
Dependent Claim 18 words
A process according to claim 11, wherein the heat treatment is carried out at 1,300° to 1,550° C.
Claim 19
Dependent Claim 32 words
A process according to claim 11, wherein the heat treatment is carried out in an inert gas atmosphere of at least one of Ar, He, H 2 , and N 2 .
Claim 20
Dependent Claim 20 words
A process according to claim 12, wherein the heat treatment is carried out at 1,300 degrees to 1,550 degrees Celsius.
Claim 21
Dependent Claim 34 words
Fine, spherical, amorphous powder having the general formula: SiCxNyHz wherein 0.1<x<2.0, 0.1<y<1.5 and 0<z<4, prepared by conducting a vapor phase reaction of a nitrogen-containing organosilicon compound substantially free from halogen atoms and oxygen atoms.
Claim 22
Dependent Claim 34 words
Fine, spherical, amorphous powder having the general formula: SiCxNyHz wherein 0.1<x<2.0, 0.1<y<1.5 and 0<z<4, prepared by conducting a vapor phase reaction of a nitrogen-containing organosilicon compound substantially free from halogen atoms and oxygen atoms.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-06-09 1989-12-09 1990-06-10 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-06-09 1993-12-09 1994-06-10 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-06-09 1997-12-09 1998-06-10 $7700.00 Window Closed / Lapsed

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