Manufacture of silicon carbide

Abstract

Abstract PURPOSE:To inexpensively manufacture high purity SiC powder having favorable physical properties as a starting material for a sintered body in a high yield in large quantities by reacting an inorg. silicon compound contg. halogen with NH3 and more than a specified amount of a carbonaceous substance in a nonoxidizing atmosphere. CONSTITUTION:An inorg. silicon compound contg. halogen is gasified by heating, introduced into a reaction tube together with gaseous ammonia and a suitable carrier gas, and reacted at a prescribed temp. Si3N4 as a reaction product is captured, and it is reacted with a carbonaceous substance in a nonoxidizing atmosphere. The carbonaceous substance is fed by more than the theoretical amount required to convert the Si3N4 into SiC. The resulting powder is treated under heating in air to remove the excess carbonaceous substance.

Inventors

• 👤 Kunihiko Terase
• 👤 邦彦 寺瀬
• 👤 Hitoshi Kijimuta
• 👤 雉子牟田　等
• 👤 Yukinori Oota
• 👤 太田　幸則

Bibliographic Details