Photoelectric conversion device

Claim 2

A photoelectric conversion device comprising: a substrate having an insulating surface; and a plurality n (n being an integer larger than one) of semiconductor elements U 1 to U n sequentially formed thereon side by side and connected in series one after another; wherein the semiconductor element U i (i=1, 2, 3, . . . n) has a first electrode E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and a second electrode F i formed on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the non-single-crystal semiconductor laminate member Q i has at least (a) a first non-single-crystal semiconductor layer of a first conductivity type making contact with the first electrode E i and (b) a second non-single-crystal semiconductor layer of a second conductivity type making contact with the second electrode F i ; wherein the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j+1 is coupled with the first electrode E j of the semiconductor element U j through a coupling portion Kj formed by an extension of the second electrode F j+1 ; wherein the first electrode E i has at least a first conductive metal oxide layer which contacts the first non-single-crystal semiconductor layer; wherein the second electrode F i and the coupling portion K j each has at least (a) a second conductive metal oxide layer which contacts with the second non-single-crystal semiconductor layer and (b) a conductive material layer disposed on the second conductive metal oxide layer; wherein the first conductive metal oxide layer of the first electrode E i is formed of indium oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor layer is the N-type, or of tin oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor is the P-type; wherein the second conductive metal oxide layer of the second electrode F i and the coupling portion K j are formed of tin oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the P-type, or of indium oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the N-type; wherein a portion of the non-single-crystal semiconductor laminate member Q 1 extends onto the substrate from the first electrode E 1 ; and wherein a portion of the second electrode F 1 extends as a external connection terminal onto the substrate extending from the extending portion of the non-single-crystal semiconductor laminate member Q 1 .

Claim 3

A photoelectric conversion device according to claim 1, wherein the second electrode F i is light-transparent.

Claim 4

A photoelectric conversion device according to claim 1, wherein the substrate and the first electrode E i are light-transparent, and wherein the conductive material layer of the second electrode F i is a reflecting conductive material layer.

Claim 5

A photoelectric conversion device according to claim 3, wherein the reflecting conductive material layer of the second electrode F i is a layer formed of silver or aluminum or consisting principally thereof.

Claim 6

A photoelectric conversion device according to claim 1, wherein the conductive material layer of the second electrode F i is a sublimable conductive material layer.

Claim 7

A photoelectric conversion device according to claim 5, wherein the sublimable conductive material layer of the second electrode F i is a layer formed of chromium or consisting principally thereof.

Claim 8

A photoelectric conversion device according to claim 1, and wherein the second conductive metal oxide layer of the coupling portion K j is coupled with the first conductive metal oxide layer of the first electrode E j .

Claim 9

A photoelectric conversion device comprising: a substrate having an insulating surface; and a plurality n (n being an integer larger than one) of semiconductor elements U 1 to U n sequentially formed thereon side by side and connected in series one after another; wherein the semiconductor element U i (i=1, 2, 3, . . . n) has a first electrode E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and a second electrode F i formed on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the non-single-crystal semiconductor laminate member Q i has at least (a) a first non-single-crystal semiconductor layer of a first conductivity type making contact with the first electrode E i and (b) a second non-single-crystal semiconductor layer of a second conductivity type making contact with the second electrode F i ; wherein the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j+1 is coupled with the first electrode E j of the semiconductor element U j through a coupling portion K j formed by an extension of the second electrode F j+1 ; wherein the first electrode E i has at least a first conductive metal oxide layer which contacts the first non-single-crystal semiconductor layer; wherein the second electrode F i and the coupling portion K j each has at least (a) a second conductive metal oxide layer which contacts with the second non-single-crystal semiconductor layer and (b) a conductive material layer disposed on the second conductive metal oxide layer; wherein the first conductive metal oxide layer of the first electrode E i is formed of indium oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor layer is the N-type, or of tin oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor is the P-type; wherein the second conductive metal oxide layer of the second electrode F i and the coupling portion K j are formed of tin oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the P-type, or of indium oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the N-type; wherein the second electrode F j+1 extends on the non-single-crystal semiconductor laminate member Q j in opposing relation to the first electrode E j ; wherein a first groove O j is cut in the non-single-crystal semiconductor laminate member Q j between the second electrode F j+1 and the first electrode E j ; wherein the coupling portion K j extends into the first groove O j ; wherein a portion of the non-single-crystal semiconductor laminate member Q n extends onto the substrate from the first electrode E n ; wherein the second electrode F n is in non-opposing relationship to the region of the first electrode E n due to the latter region extending on the substrate beyond the second electrode F n ; wherein a second electrode F 0 of the same construction as the second electrode F i is formed on the non-single-crystal-semiconductor laminate member Q n in opposing relation to the said region of the first electrode E n ; wherein a second groove O n of the same construction as the groove O j is cut in the non-single-crystal semiconductor laminate member Q n to extend between the second electrode F 0 and the first electrode E n ; wherein the second electrode F 0 extends into the second groove O n to make contact with the first electrode E n ; and wherein the second electrode F 0 extends as a external connection terminal onto the substrate extending from the portion of the non-single-crystal semiconductor laminate member Q n on the substrate.

Claim 10

A photoelectric conversion device comprising: a substrate having an insulating surface; and a plurality n (n being an integer larger than one) of semiconductor elements U 1 to U n sequentially formed thereon side by side and connected in series one after another; wherein the semiconductor element U i (i=1, 2, 3, . . . n) has a first electrode E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and a second electrode F i formed on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the non-single-crystal semiconductor laminate member Q i has at least (a) a first non-single-crystal semiconductor layer of a first conductivity type making contact with the first electrode E i and (b) a second non-single-crystal semiconductor layer of a second conductivity type making contact with the second electrode F i ; wherein the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j+1 is coupled with the first electrode E j of the semiconductor element U j through a coupling portion K j formed by an extension of the second electrode F j+1 ; wherein the first electrode E i has at least a first conductive metal oxide layer which contacts the first non-single-crystal semiconductor layer; wherein the second electrode F i and the coupling portion K j each has at least (a) a second conductive metal oxide layer which contacts with the second non-single-crystal semiconductor layer and (b) a conductive material layer disposed on the second conductive metal oxide layer; wherein the first conductive metal oxide layer of the first electrode E i is formed of indium oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor layer is the N-type, or of tin oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor is the P-type; wherein the second conductive metal oxide layer of the second electrode F i and the coupling portion K j are formed of tin oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the P-type, or of indium oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the N-type; wherein the second electrode F j+1 extends on the non-single-crystal semiconductor laminate member Q j in opposing relation to the first electrode E j ; wherein a first groove O j is cut in the non-single-crystal semiconductor laminate member Q j between the second electrode F j+1 and the first electrode E j ; wherein the coupling portion K j extends into the first groove O j ; wherein a portion of the non-single-crystal semiconductor laminate member Q n extends onto the substrate from the first electrode E n ; wherein the second electrode F n is in non-opposing relationship to the region of the first electrode E n due to the latter region extending on the substrate beyond the second electrode F n ; wherein a second electrode F 0 of the same construction as the second electrode F i is formed on the non-single-crystal-semiconductor laminate member Q n in opposing relation to the said region of the first electrode E n ; wherein a second groove O n of the same construction as the groove O j is cut in the non-single-crystal semiconductor laminate member Q n to extend between the second electrode F 0 and the first electrode E n ; wherein the second electrode F 0 extends into the second groove O n to make contact with the first electrode E n ; and wherein the second electrode F 0 extends as a external connection terminal onto the substrate extending from the portion of the non-single-crystal semiconductor laminate member Q n on the substrate.

Claim 11

A photoelectric conversion device according to claim 8, wherein the second electrodes F i and F 0 are light-transparent.

Claim 12

A photoelectric conversion device according to claim 8, wherein the substrate and the first electrode E i are light-transparent, and wherein the conductive material layers of the second electrodes F i and F 0 are each a reflecting conductive material layer.

Claim 13

A photoelectric conversion device according to claim 10, wherein the reflecting conductive material layers of the second electrodes F i and F 0 are each a layer formed of silver or aluminum or consisting principally thereof.

Claim 14

A photoelectric conversion device according to claim 8, wherein the conductive material layers of the second electrodes F i and F 0 are each a sublimable conductive material layer.

Claim 15

A photoelectric conversion device according to claim 12, wherein the sublimable conductive material layers of the second electrodes F i and F 0 are each a layer formed of chromium or consisting principally thereof.

Claim 16

A photoelectric conversion device according to claim 8, wherein the second conductive metal oxide layers of the coupling portions K j and K n are coupled with the first conductive metal oxide layers of the first electrodes E j and E n , respectively.

Claim 17

A photoelectric conversion device comprising: a substrate having an insulating surface; and a plurality n (n being an integer larger than one) of semiconductor elements U 1 to U n sequentially formed thereon side by side and connected in series one after another; wherein the semiconductor element U i (i=1, 2, 3, . . . n) has a first electrode E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and a second electrode F i formed on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the non-single-crystal semiconductor laminate member Q i has at least (a) a first non-single-crystal semiconductor layer of a first conductivity type making contact with the first electrode E i and (b) a second non-single-crystal semiconductor layer of a second conductivity type making contact with the second electrode F i ; wherein the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j-1 is coupled with the first electrode E j of the semiconductor element U j through a coupling portion K j formed by an extension of the second electrode F j+1 ; wherein the first electrode E i has at least a first conductive metal oxide layer which contacts the first non-single-crystal semiconductor layer; wherein the second electrode F i and the coupling portion K j each has at least (a) a second conductive metal oxide layer which contacts with the second non-single-crystal semiconductor layer and (b) a conductive material layer disposed on the second conductive metal oxide layer; wherein the first conductive metal oxide layer of the first electrode E i is formed of indium oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor layer is the N-type, or of tin oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor is the P-type; wherein the second conductive metal oxide layer of the second electrode F i and the coupling portion K j are formed of tin oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the P-type, or of indium oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the N-type; wherein the first electrodes E j and E j+1 are separated by a first groove G j ; wherein the second electrode F j+1 extends on the non-single-crystal semiconductor laminate member Q j in opposing relation to the first electrode E j ; wherein a first electrode E 0 of the same construction as the first electrode E i is formed on the substrate and separated from the first electrode E 1 by a second groove G 0 of the same construction as the first groove G j ; wherein the non-single-crystal semiconductor laminate member Q 1 extends onto the first electrode E 0 across the second groove G 0 ; and wherein the second electrode F 1 extends as an external connection terminal onto the region of the non-single-crystal semiconductor laminate member Q 1 on the first electrode E 0 .

Claim 18

A photoelectric conversion device comprising: a substrate having an insulating surface; and a plurality n (n being an integer larger than one) of semiconductor elements U 1 to U n sequentially formed thereon side by side and connected in series one after another; wherein the semiconductor element U i (i=1, 2, 3, . . . n) has a first electrode E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and a second electrode F i formed on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the non-single-crystal semiconductor laminate member Q i has at least (a) a first non-single-crystal semiconductor layer of a first conductivity type making contact with the first electrode E i and (b) a second non-single-crystal semiconductor layer of a second conductivity type making contact with the second electrode F i ; wherein the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j-1 is coupled with the first electrode E j of the semiconductor element U j through a coupling portion K j formed by an extension of the second electrode F j+1 ; wherein the first electrode E i has at least a first conductive metal oxide layer which contacts the first non-single-crystal semiconductor layer; wherein the second electrode F i and the coupling portion K j each has at least (a) a second conductive metal oxide layer which contacts with the second non-single-crystal semiconductor layer and (b) a conductive material layer disposed on the second conductive metal oxide layer; wherein the first conductive metal oxide layer of the first electrode E i is formed of indium oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor layer is the N-type, or of tin oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor is the P-type; wherein the second conductive metal oxide layer of the second electrode F i and the coupling portion K j are formed of tin oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the P-type, or of indium oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the N-type; wherein the first electrodes E j and E j+1 are separated by a first groove G j ; wherein the second electrode F j+1 extends on the non-single-crystal semiconductor laminate member Q j in opposing relation to the first electrode E j ; wherein a first electrode E 0 of the same construction as the first electrode E i is formed on the substrate and separated from the first electrode E 1 by a second groove G 0 of the same construction as the first groove G j ; wherein the non-single-crystal semiconductor laminate member Q 1 extends onto the first electrode E 0 across the second groove G 0 ; and wherein the second electrode F 1 extends as an external connection terminal onto the region of the non-single-crystal semiconductor laminate member Q 1 on the first electrode E 0 .

Claim 19

A photoelectric conversion device according to claim 15, wherein the second electrode F i is light-transparent.

Claim 20

A photoelectric conversion device according to claim 15, wherein the substrate and the first electrode E i are light-transparent, and wherein the conductive material layer of the second electrode F i is a reflecting conductive material layer.

Claim 21

A photoelectric conversion device according to claim 17, wherein the reflecting conductive material layer of the second electrode F i is a layer formed of silver or aluminum or consisting principally thereof.

Claim 22

A photoelectric conversion device according to claim 15, wherein the conductive material layer of the second electrode F i is a sublimable conductive material layer.

Claim 23

A photoelectric conversion device according to claim 19, wherein the sublimable conductive material layer of the second electrode F i is a layer formed of chromium or consisting principally thereof.

Claim 24

A photoelectric conversion device according to claim 15, wherein the second conductive metal oxide layer of the coupling portion K j is coupled with the first conductive metal oxide layer of the first electrode E j .

Claim 25

A photoelectric conversion device comprising: a substrate having an insulating surface; and a plurality n (n being an integer larger than one) of semiconductor elements U 1 to U n sequentially formed thereon side by side and connected in series one after another; wherein the semiconductor element U i (i=1, 2, 3 . . . n) has a first electrode E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and a second electrode F i formed on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the non-single-crystal semiconductor laminate member Q i has at least (a) a first non-single-crystal semiconductor layer of a first conductivity type making contact with the first electrode E i and (b) a second non-single-crystal semiconductor layer of a second conductivity type making contact with the second electrode F i ; wherein the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j+1 is coupled with the first electrode E j of the semiconductor element U j through a coupling portion K j formed by an extension of the second electrode F j+1 ; wherein the first electrode E i has at least a first conductive metal oxide layer which contacts the first non-single-crystal semiconductor layer; wherein the second electrode F i and the coupling portion K j each has at least (a) a second conductive metal oxide layer which contacts with the second non-single-crystal semiconductor layer and (b) a conductive material layer disposed on the second conductive metal oxide layer; wherein the first conductive metal oxide layer of the first electrode E i is formed of indium oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor layer is the N-type, or of tin oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor is the P-type; wherein the second conductive metal oxide layer of the second electrode F i and the coupling portion K j are formed of tin oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the P-type, or of indium oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the N-type; wherein the second electrode F j+1 extends on the non-single-crystal semiconductor laminate member Q j in opposing relation to the first electrode E j ; wherein a first groove O j is cut in the non-single-crystal semiconductor laminate member Q j between the second electrode F j+1 and the first electrode E j ; wherein the coupling portion K j extends into the first groove O j ; wherein the second electrode F n is in nonopposing relationship to the region of the first electrode E n due to the latter region extending on the substrate beyond the second electrode F n ; wherein a second electrode F 0 of the same construction as the second electrode F i is formed as an external connection terminal on the non-single-crystal- semiconductor laminate member Q n in opposing relation to the said region of the first electrode E n ; wherein a second groove O n of the same construction as the groove O j is cut in the non-single-crystal semiconductor laminate member Q n to extend between the second electrode F 0 and the first electrode E n ; and wherein the second electrode F 0 extends into the second groove O n to make contact with the first electrode E n .

Claim 26

A photoelectric conversion device comprising: a substrate having an insulating surface; and a plurality n (n being an integer larger than one) of semiconductor elements U 1 to U n sequentially formed thereon side by side and connected in series one after another; wherein the semiconductor element U i (i=1, 2, 3 . . . n) has a first electrode E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and a second electrode F i formed on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the non-single-crystal semiconductor laminate member Q i has at least (a) a first non-single-crystal semiconductor layer of a first conductivity type making contact with the first electrode E i and (b) a second non-single-crystal semiconductor layer of a second conductivity type making contact with the second electrode F i ; wherein the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j+1 is coupled with the first electrode E j of the semiconductor element U j through a coupling portion K j formed by an extension of the second electrode F j+1 ; wherein the first electrode E i has at least a first conductive metal oxide layer which contacts the first non-single-crystal semiconductor layer; wherein the second electrode F i and the coupling portion K j each has at least (a) a second conductive metal oxide layer which contacts with the second non-single-crystal semiconductor layer and (b) a conductive material layer disposed on the second conductive metal oxide layer; wherein the first conductive metal oxide layer of the first electrode E i is formed of indium oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor layer is the N-type, or of tin oxide or a material consisting principally thereof in the case where the first conductivity type of the first non-single-crystal semiconductor is the P-type; wherein the second conductive metal oxide layer of the second electrode F i and the coupling portion K j are formed of tin oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the P-type, or of indium oxide or a material consisting principally thereof in the case where the second conductivity type of the second non-single-crystal semiconductor layer is the N-type; wherein the second electrode F j+1 extends on the non-single-crystal semiconductor laminate member Q j in opposing relation to the first electrode E j ; wherein a first groove O j is cut in the non-single-crystal semiconductor laminate member Q j between the second electrode F j+1 and the first electrode E j ; wherein the coupling portion K j extends into the first groove O j ; wherein the second electrode F n is in nonopposing relationship to the region of the first electrode E n due to the latter region extending on the substrate beyond the second electrode F n ; wherein a second electrode F 0 of the same construction as the second electrode F i is formed as an external connection terminal on the non-single-crystal- semiconductor laminate member Q n in opposing relation to the said region of the first electrode E n ; wherein a second groove O n of the same construction as the groove O j is cut in the non-single-crystal semiconductor laminate member Q n to extend between the second electrode F 0 and the first electrode E n ; and wherein the second electrode F 0 extends into the second groove O n to make contact with the first electrode E n .

Claim 27

A photoelectric conversion device according to claim 22, wherein the second electrodes F i and F 0 are light-transparent.

Claim 28

A photoelectric conversion device according to claim 22, wherein the substrate and the first electrode E i are light-transparent, and wherein the conductive material layers of the second electrodes F i and F 0 are each a reflecting conductive material layer.

Claim 29

A photoelectric conversion device according to claim 24, wherein the reflecting conductive material layers of the second electrodes F i and F 0 are each a layer formed of silver or aluminum or consisting principally thereof.

Claim 30

A photoelectric conversion device according to claim 22, wherein the conductive material layers of the second electrodes F i and F 0 are each a sublimable conductive material layer.

Claim 31

A photoelectric conversion device according to claim 26, wherein the sublimable conductive material layers of the second electrodes F i and F 0 are each a layer formed of chromium or consisting principally thereof.

Claim 32

A photoelectric conversion device according to claim 22, wherein the second conductive metal oxide layers of the coupling portions K j and K n are coupled with the first conductive metal oxide layers of the first electrodes E j and E n , respectively.