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US4589951A
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Method for annealing by a high energy beam to form a single-crystal film
Assignee: Fujitsu Ltd
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Filing: 1984-12-19
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Granted: 1986-05-20
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Expires: 2004-12-19
Abstract
Abstract A large single-crystalline film on an amorphous insulator is formed by high energy beam annealing. The crystal growth of a molten polycrystalline or amorphous film on the insulator is controlled to occur from the central region toward the outer edge of the molten zone. This control is accomplished by using, for example, a doughnut-shaped laser beam.
Inventors
- 👤 Seiichiro Kawamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:57
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1076; Y10T117/108; Y10T117/1088
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
103 words
A method for forming a single-crystalline semiconductor film on an amorphous insulator, comprising the steps of: depositing a polycrystalline or amorphous semiconductor film on the amorphous insulator; and scanning a high-energy beam over the polycrystalline or amorphous semiconductor film, the high energy beam having a thermal profile such that a region of the polycrystalline or amorphous semiconductor film irradiated by the high energy beam is melted and then cooled so as to crystallize in the direction from a central region toward an outer edge of a trailing edge of an area exposed to the high-energy beam, whereby a continuous single-crystalline film is formed.
Claim 2
Independent Claim
103 words
A method for forming a single-crystalline semiconductor film on an amorphous insulator, comprising the steps of: depositing a polycrystalline or amorphous semiconductor film on the amorphous insulator; and scanning a high-energy beam over the polycrystalline or amorphous semiconductor film, the high energy beam having a thermal profile such that a region of the polycrystalline or amorphous semiconductor film irradiated by the high energy beam is melted and then cooled so as to crystallize in the direction from a central region toward an outer edge of a trailing edge of an area exposed to the high-energy beam, whereby a continuous single-crystalline film is formed.
Claim 3
Dependent Claim
23 words
A method as claimed in claim 1, wherein said scanning step comprises scanning with a high-energy beam that is a doughnut-shaped laser beam.
Claim 4
Dependent Claim
25 words
A method as claimed in claim 1, wherein said scanning step comprises scanning with a high-energy beam that is half of a doughnut-shaped laser beam.
Claim 5
Dependent Claim
31 words
A method as claimed in claim 1, wherein said scanning step comprises scanning with a high-energy beam having an electron or ion beam spot that is traversed in an 8-shaped path.
Claim 6
Dependent Claim
20 words
A method as claimed in claim 1, wherein said scanning step comprises scanning with a high-energy beam that is hook-shaped.
Claim 7
Dependent Claim
19 words
A method as claimed in claim 1, wherein said scanning step comprises scanning with a plurality of high-energy beams.
Claim 8
Dependent Claim
59 words
A method as claimed in claim 1, wherein said scanning step comprises scanning with a high-energy beam comprising three spot beams, one of the spot beams being positioned in the beam-scanning zone and two of the spot beams being placed symmetrically at the rear and at first and second sides, respectively, of the spot beam in the beam-scanning zone.
Claim 9
Dependent Claim
109 words
A method as claimed in claim 1, 2, 3, 4, 5, 6 or 7, wherein said scanning step comprises shifting the scan-line laterally so the high-energy beam is scanned more than one time across the semiconductor film and the distance of the shift is selected to satisfy the following formula: W.sub.2 <d<W.sub.1 +W.sub.2 where d denotes a shifting distance of the scan-line from the preceding line, W 1 denotes a width of a single-crystal region which is formed by a single beam, and W 2 denotes a width of the polycrystalline region which is formed on first and second sides of the central single-crystal region by the single beam.
Claim 10
Dependent Claim
66 words
A method for forming a single crystalline semiconductor film on an amorphous insulator, according to claim 2, comprising the steps of: heating the semiconductor film to a temperature of approximately 500° C.; and scanning the heated semiconductor film with the high-energy beam which has a diameter of approximately 30-80 μm, a scanning speed of approximately 10 cm/sec., and a beam output power of approximately 10-15 Watts.
Claim 11
Dependent Claim
66 words
A method for forming a single crystalline semiconductor film on an amorphous insulator, according to claim 4, comprising the steps of: heating the semiconductor film; and scanning the heated semiconductor film with the high-energy beam traversed in the 8-shaped path, the beam moving at a speed of approximately several tens of meters per second and the amorphous insulator moving at a speed of approximately 10 cm/sec.
Claim 12
Independent Claim
86 words
A method for forming a single-crystalline semiconductor film on an amorphous insulator layer, comprising the steps of: forming the amorphous insulator layer on a semiconductor substrate, the amorphous insulator layer having a cross-sectional thickness which is thinner in the central portion than in the outer portions; forming a polycrystalline or amorphous semiconductor film on the amorphous insulator layer; and scanning a high energy beam over the polycrystalline or amorphous semiconductor film in a direction perpendicular to the amorphous insulator, whereby a continuous single-crystalline film is formed.
Claim 13
Independent Claim
86 words
A method for forming a single-crystalline semiconductor film on an amorphous insulator layer, comprising the steps of: forming the amorphous insulator layer on a semiconductor substrate, the amorphous insulator layer having a cross-sectional thickness which is thinner in the central portion than in the outer portions; forming a polycrystalline or amorphous semiconductor film on the amorphous insulator layer; and scanning a high energy beam over the polycrystalline or amorphous semiconductor film in a direction perpendicular to the amorphous insulator, whereby a continuous single-crystalline film is formed.
Claim 14
Independent Claim
69 words
A method for forming a single-crystalline semiconductor film on an amorphous insulator layer, comprising the steps of: forming a polycrystalline or amorphous semiconductor film on the amorphous insulator; covering only the peripheral region of the polycrystalline or amorphous semiconductor film with a nonreflective film; and scanning a high energy beam over the polycrystalline or amorphous semiconductor film formed on the amorphous insulator, whereby a continuous single-crystalline film is formed.
Claim 15
Independent Claim
69 words
A method for forming a single-crystalline semiconductor film on an amorphous insulator layer, comprising the steps of: forming a polycrystalline or amorphous semiconductor film on the amorphous insulator; covering only the peripheral region of the polycrystalline or amorphous semiconductor film with a nonreflective film; and scanning a high energy beam over the polycrystalline or amorphous semiconductor film formed on the amorphous insulator, whereby a continuous single-crystalline film is formed.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-19 | 1989-11-18 | 1990-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-19 | 1993-11-18 | 1994-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-19 | 1997-11-18 | 1998-05-20 | $7700.00 | Window Closed / Lapsed |