Patent US4587171A successfully refreshed from Google Patents.
US4587171A
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Process for forming passivation film on photoelectric conversion device and the device produced thereby
Assignee: Fujifilm Business Innovation Corp
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Filing: 1985-04-24
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Granted: 1986-05-06
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Expires: 2005-04-24
Abstract
Abstract In a process for forming a passivation film on the surface of a photoelectric conversion device having a junction between hydrogenated amorphous silicon and a conductive electrode, the passivation film is formed by the steps of forming a first passivation film of silicon oxide on the surface of the photoelectric conversion device and then forming a second passivation film of silicon nitride on the first passivation film. In this process, the first passivation film is formed under an atmosphere of a mixed gas prepared by mixing an excess of a gas containing oxygen with silane gas in accordance with the plasma CVD method.
Inventors
- 👤 Toshihisa Hamano
- 👤 Takeshi Nakamura
- 👤 Mario Fuse
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 18:57
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10F; H10F30/00; H10F30/10; H10F30/15; H10F71/00; H10F71/129; H10F77/00; H10F77/30; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31678
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
125 words
In a photoelectric conversion device having hydrogenated amorphous silicon between a transparent upper conductive electrode and a lower electrode on a substrate, a junction between said hydrogenated amorphous silicon and said electrically conductive electrode and covered with passivation film, the improvement comprising a first passivation film of silicon oxide formed by plasma chemical vapor deposition below 400° C. and a second passivation film of silicon nitride covering said first passivation film and formed by plasma chemical vapor deposition below 400° C., said photoelectric conversion device having a lower dark current value than a corresponding device having a passivation film of silicon oxide alone or of silicon nitride alone and having a light/dark current ratio substantially the same as a corresponding device having no passivation film.
Claim 2
Dependent Claim
125 words
In a photoelectric conversion device having hydrogenated amorphous silicon between a transparent upper conductive electrode and a lower electrode on a substrate, a junction between said hydrogenated amorphous silicon and said electrically conductive electrode and covered with passivation film, the improvement comprising a first passivation film of silicon oxide formed by plasma chemical vapor deposition below 400° C. and a second passivation film of silicon nitride covering said first passivation film and formed by plasma chemical vapor deposition below 400° C., said photoelectric conversion device having a lower dark current value than a corresponding device having a passivation film of silicon oxide alone or of silicon nitride alone and having a light/dark current ratio substantially the same as a corresponding device having no passivation film.
Claim 3
Dependent Claim
153 words
A process for forming a passivation film on a photoelectric conversion device having hydrogenated amorphous silicon between a transparent upper conductive electrode and a lower electrode on a substrate, and a junction between said hydrogenated amorphous silicon and said upper transparent conductive electrode, comprising the steps of forming a first passivation film of silicon oxide on the surface of said photoelectric conversion device by plasma chemical vapor deposition at a substrate temperature of less than 400° C., and then forming a second passivation film of silicon nitride on said first passivation film by plasma chemical vapor deposition at a substrate temperature of less than 400° C. in order to provide a photoelectric conversion device having a lower dark current value than a device having a passivation film of silicon oxide alone or of silicon nitride alone and having a light/dark current ratio substantially the same as a corresponding device having no passivation film.
Claim 4
Dependent Claim
153 words
A process for forming a passivation film on a photoelectric conversion device having hydrogenated amorphous silicon between a transparent upper conductive electrode and a lower electrode on a substrate, and a junction between said hydrogenated amorphous silicon and said upper transparent conductive electrode, comprising the steps of forming a first passivation film of silicon oxide on the surface of said photoelectric conversion device by plasma chemical vapor deposition at a substrate temperature of less than 400° C., and then forming a second passivation film of silicon nitride on said first passivation film by plasma chemical vapor deposition at a substrate temperature of less than 400° C. in order to provide a photoelectric conversion device having a lower dark current value than a device having a passivation film of silicon oxide alone or of silicon nitride alone and having a light/dark current ratio substantially the same as a corresponding device having no passivation film.
Claim 5
Dependent Claim
36 words
The process as claimed in claim 2, wherein the thickness of the silicon oxide film is from 3000 Å to 2.5 μm and the thickness of the silicon nitride film is from 4500 to 9000 Å.
Claim 6
Dependent Claim
32 words
The process as claimed in claim 2, wherein said second passivation film is formed under an atmosphere of a mixed gas prepared by mixing ammonia with silane gas plasma chemical vapor deposition.
Claim 7
Dependent Claim
16 words
The process as claimed in claim 2, wherein said conductive electrode is composed of indium-tin oxide.
Claim 8
Dependent Claim
21 words
A photoelectric conversion device passivated according to the process of claim 2, wherein the light/dark current ratio is at least 1000.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-05 | 1989-11-04 | 1990-05-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-05 | 1993-11-04 | 1994-05-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-05 | 1997-11-04 | 1998-05-06 | $7700.00 | Window Closed / Lapsed |