Abstract A semiconductor device is disclosed which includes an electrode or wiring layer having a polycrystalline silicon layer formed on an insulating film and a metal silicide layer formed thereon for reduction in electrical resistance. In order to prevent the metal silicide layer from diffusing into the polycrystalline silicon layer to finally reach the interface with the insulating film through various high-temperature heat treatment processes, the impurity concentration of the polycrystalline silicon layer is made different in the depthwise direction such that the concentration is higher at the lower part in contiguous with the insulating film than the upper part. With this structure, the diffusion of the metal silicide going to approach the insulating film is blocked by the presence of the lower part of high impurity concentration.
A method of manufacturing a semiconductor device comprising the steps of forming an insulating film on a semiconductor substrate, forming a first polycrystalline silicon film on the surface of said insulating film, forming a second polycrystalline silicon film having a lower impurity concentration than said first polycrystalline silicon film on the surface of said first polycrystalline silicon film and less than 10 21 cm -3 , patterning both said first and second polycrystalline silicon films into a predetermined shape, forming a metal film on said second polycrystalline silicon film and reacting said metal film and said second polycrystalline silicon film to form a metal silicide layer.
Claim 2
Independent Claim
106 words
A method of manufacturing a semiconductor device comprising the steps of forming an insulating film on a semiconductor substrate, forming a first polycrystalline silicon film on the surface of said insulating film, forming a second polycrystalline silicon film having a lower impurity concentration than said first polycrystalline silicon film on the surface of said first polycrystalline silicon film and less than 10 21 cm -3 , patterning both said first and second polycrystalline silicon films into a predetermined shape, forming a metal film on said second polycrystalline silicon film and reacting said metal film and said second polycrystalline silicon film to form a metal silicide layer.
Claim 3
Dependent Claim
29 words
A method of manufacturing a semiconductor device of claim 1, wherein the impurity concentration of said first polycrystalline silicon layer is not less than 10 21 cm -3 .
Claim 4
Dependent Claim
28 words
A method of manufacturing a semiconductor device of claim 1, wherein impurity concentration of said second polycrystalline silicon layer is not less than 10 17 cm -3 .