Patent US4582560A successfully refreshed from Google Patents.
US4582560A
Expired / Lapsed
US
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In situ production of silicon crystals on substrate for use in solar cell construction
Assignee: SRI International Inc
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Filing: 1982-12-06
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Granted: 1986-04-15
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Expires: 2002-12-06
Abstract
Abstract An improved method is disclosed for growing directly on a substrate, crystals of silicon large enough to permit construction of an efficient solar cell therefrom. The silicon is transported to a deposition zone together with a growth modifier selected from the class consisting of a Group IV metal, a Group IB metal, the halide of a Group IV metal, the halide of a Group IB metal, or a mixture thereof. The silicon may be in the form of a metal vapor, a silane, or one or more halosilanes.
Inventors
- 👤 Angel Sanjurjo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 11:32
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B25/00; C30B25/02; C30B25/06; C30B29/60; C30B29/605
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
133 words
A method for increasing the size of silicon crystals to permit economic construction of solar cells therefrom which comprises: (a) heating a silicon-bearing material and a growth modifier selected from the group consisting of one or more Group IVA metals, the halide of one or more Group IB metals, and the halide of one or more Group IVA metals in a first zone to a temperature of from at least 1300° C. to as high as a plasma temperature to form a vapor consisting of the growth modifier and said silicon-bearing material; and (b) transporting said mixture to a second cooler zone maintained at a temperature of about 700° to 1100° C. to permit deposition on a substrate therein of silicon crystals having an average particle size of from 50 to 300 microns.
Claim 2
Independent Claim
133 words
A method for increasing the size of silicon crystals to permit economic construction of solar cells therefrom which comprises: (a) heating a silicon-bearing material and a growth modifier selected from the group consisting of one or more Group IVA metals, the halide of one or more Group IB metals, and the halide of one or more Group IVA metals in a first zone to a temperature of from at least 1300° C. to as high as a plasma temperature to form a vapor consisting of the growth modifier and said silicon-bearing material; and (b) transporting said mixture to a second cooler zone maintained at a temperature of about 700° to 1100° C. to permit deposition on a substrate therein of silicon crystals having an average particle size of from 50 to 300 microns.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein said silicon-bearing material is metallic silicon.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein said silicon-bearing material consists of one or more silicon halides.
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein said silicon-bearing material is selected from the group consisting of silane, dichlorosilane, trichlorosilane, tetrachlorosilane, and mixtures thereof.
Claim 6
Independent Claim
120 words
A method for increasing the size of silicon crystals to permit economic construction of solar cells therefrom which comprises: (a) heating a silicon-bearing material and a growth modifier comprising the halide of a Group IB metal in a first zone to a temperature of from at least 1300° C. to as high as a plasma temperature to form a vapor consisting of the growth modifier and said silicon-bearing material; and (b) transporting said mixture to a second cooler zone maintained at a temperature of about 700° to 1100° C. to permit deposition on a substrate therein of silicon crystals having an average particle size of from 50 to 300 microns and suitable for the construction of a solar cell therefrom.
Claim 7
Independent Claim
120 words
A method for increasing the size of silicon crystals to permit economic construction of solar cells therefrom which comprises: (a) heating a silicon-bearing material and a growth modifier comprising the halide of a Group IB metal in a first zone to a temperature of from at least 1300° C. to as high as a plasma temperature to form a vapor consisting of the growth modifier and said silicon-bearing material; and (b) transporting said mixture to a second cooler zone maintained at a temperature of about 700° to 1100° C. to permit deposition on a substrate therein of silicon crystals having an average particle size of from 50 to 300 microns and suitable for the construction of a solar cell therefrom.
Claim 8
Independent Claim
114 words
A method for increasing the size of silicon crystals to permit economic construction of solar cells therefrom which comprises: (a) heating a silicon-bearing material and a growth modifier selected from the group consisting of one or more Group IVA metals in a first zone to a temperature of from at least 1300° C. to as high as a plasma temperature to form a vapor consisting of the growth modifier and said silicon-bearing material; and (b) transporting said mixture to a second cooler zone maintained at a temperature of about 700° to 1100° C. to permit deposition on a substrate therein of silicon crystals having an average particle size of from 50 to 300 microns.
Claim 9
Independent Claim
114 words
A method for increasing the size of silicon crystals to permit economic construction of solar cells therefrom which comprises: (a) heating a silicon-bearing material and a growth modifier selected from the group consisting of one or more Group IVA metals in a first zone to a temperature of from at least 1300° C. to as high as a plasma temperature to form a vapor consisting of the growth modifier and said silicon-bearing material; and (b) transporting said mixture to a second cooler zone maintained at a temperature of about 700° to 1100° C. to permit deposition on a substrate therein of silicon crystals having an average particle size of from 50 to 300 microns.
Claim 10
Independent Claim
117 words
A method for increasing the size of silicon crystals to permit economic construction of solar cells therefrom which comprises: (a) heating a silicon-bearing material and a growth modifier selected from the group consisting of the halide of one or more Group IVA metals in a first zone to a temperature of from at least 1300° C. to as high as a plasma temperature to form a vapor consisting of the growth modifier and said silicon-bearing material; and (b) transporting said mixture to a second cooler zone maintained at a temperature of about 700° to 1100° C. to permit deposition on a substrate therein of silicon crystals having an average particle size of from 50 to 300 microns.
Claim 11
Independent Claim
117 words
A method for increasing the size of silicon crystals to permit economic construction of solar cells therefrom which comprises: (a) heating a silicon-bearing material and a growth modifier selected from the group consisting of the halide of one or more Group IVA metals in a first zone to a temperature of from at least 1300° C. to as high as a plasma temperature to form a vapor consisting of the growth modifier and said silicon-bearing material; and (b) transporting said mixture to a second cooler zone maintained at a temperature of about 700° to 1100° C. to permit deposition on a substrate therein of silicon crystals having an average particle size of from 50 to 300 microns.
Claim 12
Independent Claim
113 words
A method for increasing the size of silicon crystals to permit economic construction of solar cells therefrom which comprises: (a) injecting a mixture of a silicon-bearing material and a growth modifier selected from the group consisting of one or more Group IVA metals and the halide of one or more Group IVA metals into a first zone at a temperature above the melting point of the silicon-bearing material and the growth modifier; and (b) transporting said mixture to a second cooler zone maintained at a temperature of about 700° to 1100° C. to permit deposition on a substrate therein of silicon crystals having an average particle size of from 50 to 300 microns.
Claim 13
Independent Claim
113 words
A method for increasing the size of silicon crystals to permit economic construction of solar cells therefrom which comprises: (a) injecting a mixture of a silicon-bearing material and a growth modifier selected from the group consisting of one or more Group IVA metals and the halide of one or more Group IVA metals into a first zone at a temperature above the melting point of the silicon-bearing material and the growth modifier; and (b) transporting said mixture to a second cooler zone maintained at a temperature of about 700° to 1100° C. to permit deposition on a substrate therein of silicon crystals having an average particle size of from 50 to 300 microns.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-14 | 1989-10-14 | 1990-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-14 | 1993-10-14 | 1994-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-14 | 1997-10-14 | 1998-04-15 | $7700.00 | Window Closed / Lapsed |