Vertically integrated solid state color imager

Claim 1

A solid state color imaging device comprising: a first plurality of spaced apart linear conductors supported on an insulating substrate, a first photovoltaic semiconductor layer deposited on said substrate and first conductors, said first semiconductor layer comprising a p-i-n amorphous silicon structure having i-layer thickness and/or bandgap selected to cause said layer to primarily absorb and provide electrical response to a first color band, a second plurality of spaced apart conductors deposited on said first semiconductor layer, said second conductors being transparent and aligned orthogonal to said first conductors, a second photovoltaic semiconductor layer deposited on said first layer and said second conductors, said second semiconductor layer comprising a p-i-n amorphous silicon structure having i-layer thickness and/or bandgap selected to cause said layer to primarily provide electrical response to a second color band, and a third plurality of spaced apart linear conductors deposited on said second semiconductor layer, said third conductors positioned above and in alignment with said first conductors.