US4388482A
Expired / Lapsed
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High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1981-05-19
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Granted: 1983-06-14
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Expires: 2001-05-19
Abstract
Abstract A p-i-n amorphous silicon photovoltaic cell of improved conversion efficiency is obtained by incorporating, as either the p or n type side of the cell exposed to the incident light, an amorphous semiconductor which satisfies the requirements that the optical band gap, Eg.opt, be not less than about 1.85 eV, the electric conductivity be not less than about 10-8 ( OMEGA .cm)-1 the p-i-n junction diffusion potential, Vd, be not less than about 1.1 volts, and be formed of a substance represented by one of the general formulas, a-Si1-xCx and a-Si1-yNy.
Inventors
- 👤 Yoshihiro Hamakawa
- 👤 Yoshihisa Tawada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 15:21
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10F10/00; H10F10/10; H10F10/17; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
69 words
A p-i-n amorphous silicon type photovoltaic cell, characterized by incorporating as either the p or n type side thereof exposed to the incident light an amorphous semiconductor having an optical band gap, Eg.opt, of not less than about 1.85 eV, an electric conductivity of not less than about 10 -8 (Ω.cm) -1 at 20° C. and a p-i-n junction diffusion potential, Vd, of not less than about 1.1 volts.
Claim 2
Dependent Claim
69 words
A p-i-n amorphous silicon type photovoltaic cell, characterized by incorporating as either the p or n type side thereof exposed to the incident light an amorphous semiconductor having an optical band gap, Eg.opt, of not less than about 1.85 eV, an electric conductivity of not less than about 10 -8 (Ω.cm) -1 at 20° C. and a p-i-n junction diffusion potential, Vd, of not less than about 1.1 volts.
Claim 3
Dependent Claim
39 words
The p-i-n amorphous silicon type photovoltaic cell according to claim 1, wherein the p or n type amorphous semiconductor is made of a substance represented by the general formula a-Si 1-x C x or a-Si 1-y N y respectively.
Claim 4
Dependent Claim
29 words
The p-i-n amorphous silicon type photovoltaic cell according to claim 2, wherein the amorphous semiconductor satisfies the relationship of 0.05<x<0.8 or 0.05<y<0.8 with respect to the general formula involved.
Claim 5
Dependent Claim
31 words
A p-i-n amorphous silicon type photovoltaic cell according to claim 3 wherein the p or n side opposite the side exposed to light is also formed of said amorphous semiconductor material.
Claim 6
Dependent Claim
41 words
A p-i-n amorphous silicon type photovoltaic cell according to claim 1 in which the amorphous semiconductor exposed to the incident light is a p type semiconductor of the general formula a-Si 1-x C x in which x satisfies the relationship 0.05<x<0.8.
Claim 7
Dependent Claim
30 words
A p-i-n amorphous silicon type photovoltaic cell according to claim 5 in which both the intrinsic layer and n type layer of the photovoltaic cell are made of amorphous silicon.
Claim 8
Dependent Claim
41 words
A p-i-n amorphous silicon type photovoltaic cell according to claim 1 in which the amorphous semiconductor exposed to the incident light is an n type semiconductor of the general formula a-Si 1-x C x in which x satisfies the relationship 0.05<x<0.8.
Claim 9
Dependent Claim
31 words
A p-i-n amorphous type silicon photovoltaic cell according to claim 7 in which both the intrinsic layer and the p type layer of the photovoltaic cell are made of amorphous silicon.
Claim 10
Dependent Claim
42 words
A p-i-n amorphous silicon type photovoltaic cell according to claim 1 in which the amorphous semiconductor exposed to the incident light is a p type semiconductor of the general formula a-Si 1-y N y in which y satisfies the relationship of 0.05<y<0.8.
Claim 11
Dependent Claim
30 words
A p-i-n amorphous silicon type photovoltaic cell according to claim 9 in which both the intrinsic layer and n type layer of the photovoltaic cell are made of amorphous silicon.
Claim 12
Dependent Claim
42 words
A p-i-n amorphous silicon type photovoltaic cell according to claim 1 in which the amorphous semiconductor exposed to the incident light is an n type semiconductor of the general formula a-Si 1-y N y in which y satisfies the relationship of 0.05<y<0.8.
Claim 13
Dependent Claim
31 words
A p-i-n amorphous type silicon photovoltaic cell according to claim 11 in which both the intrinsic layer and the p type layer of the photovoltaic cell are made of amorphous silicon.
Claim 14
Dependent Claim
51 words
A p-i-n amorphous silicon type voltaic cell according to claim 1 in which the p or n side opposite the side exposed to the incident light is made of a-Si 1-x C x or a-Si 1-y N y , respectively, wherein x and y satisfy the relationship of 0.05<x<0.8 and 0.05<y<0.8.
References Cited (Backward Citations)
US4109271A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-06-13 | 1986-12-13 | 1987-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-06-13 | 1990-12-13 | 1991-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-06-13 | 1994-12-13 | 1995-06-14 | $7700.00 | Window Closed / Lapsed |