Photodiodes having a hole extending therethrough

Claim 2

A photodiode comprising a relatively wide bandgap semiconductor body of one conductivity type, a first layer of said one conductivity type formed on said body, said first layer having a narrower bandgap than said body, a second layer of the opposite conductivity type contiguous with said first layer and having a narrower bandgap than said body, thereby forming a p-n junction at the interface between said layers, said layers having a first hole which extends therethrough, said second layer having a segment which extends along the inside of said hole, so that said p-n junction does not intersect said hole, said body having a second hole which extends therethrough and is axially aligned with said first hole, said second hole having a larger diameter than said first hole, and means forming electrical contacts to said photodiode.

Claim 3

The photodiode of claim 1 further including a metal layer on the inside wall of said first hole.

Claim 4

The photodiode of claim 1 wherein said p-n junction intersects the bottom of said second hole, and a portion of said first and second layers is exposed by said second hole, and further including an antireflection and passivation coating on said exposed portions.

Claim 5

The photodiode of claim 1 wherein said body comprises n-InP, said first layer comprises n-In 0 .53 Ga 0 .47 As, and said second layer comprises p + -In 0 .53 Ga 0 .47 As.

Claim 6

The photodiode of claim 1 for use in conjuction with a bidirectional system for communicating outgoing laser radiation and incoming laser radiation at the same wavelength over a transmission fiber, wherein said first hole has a diameter and length adapted for focusing said outgoing radiation therethrough, and said second hole has a much larger diameter than said first hole and is adapted to receive a transmission fiber, said incoming radiation being absorbed in said first and second layers.

Claim 7

The photodiode of claims 1, 2, 3, 4, or 5 further including a third layer of said one conductivity type on said second layer and having a narrower bandgap than said body, thereby forming a second p-n junction at the interface with said second layer, said segment of said second layer along said first hole also preventing said second junction from intersecting said first hole, and said second junction being adapted to sample a portion of said outgoing radiation focused in said first hole, thereby to generate a feedback photocurrent for stabilization purposes.

Claim 8

The photodiode of claim 6 wherein said third layer comprises n-In 0 .53 Ga 0 .47 As.

Claim 9

A photodiode comprising a relatively wide bandgap semiconductor body of one conductivity type, a first layer of said one conductivity type on said body, a second layer of opposite conductivity type on said first layer, said first and second layers having narrower bandgaps than said body, a third layer formed on said second layer, said third layer having an exterior peripheral portion of the same conductivity type as said second layer and having an interior portion of the opposite conductivity type contiguous with said exterior portion, a first p-n junction formed at the interface between said first and second layers, and a second p-n junction formed at the interface between said second layer and said interior portion, said body and said layers having a hole extending therethrough and through said p-n junctions, said first p-n junction being responsive to outgoing radiation focused through said hole for generating a feedback photocurrent for stabilizing the source of said outgoing radiation, said second p-n junction being responsive to incoming radiation coupled from a transmission fiber to said third layer, and means forming electrical contacts to said photodiode.

Claim 10

A photodiode comprising a relatively wide bandgap semiconductor body of one conductivity type, a first layer of said one conductivity type on said body, a second layer of opposite conductivity type on said first layer, said first and second layers having narrower bandgaps than said body, a third layer formed on said second layer, said third layer having an exterior peripheral portion of the same conductivity type as said second layer and having an interior portion of the opposite conductivity type contiguous with said exterior portion, a first p-n junction formed at the interface between said first and second layers, and a second p-n junction formed at the interface between said second layer and said interior portion, said body and said layers having a hole extending therethrough and through said p-n junctions, said first p-n junction being responsive to outgoing radiation focused through said hole for generating a feedback photocurrent for stabilizing the source of said outgoing radiation, said second p-n junction being responsive to incoming radiation coupled from a transmission fiber to said third layer, and means forming electrical contacts to said photodiode.

Claim 11

The photodiode of claim 8 wherein said body comprises n-InP, said first layer comprises n-In 0 .53 Ga 0 .47 As, said second layer comprises p + -In 0 .53 Ga 0 .47 As, said peripheral portion of said third layer comprises p-In 0 .53 Ga 0 .47 As, and said interior portion of said third layer comprises n-In 0 .53 Ga 0 .47 As.