High power high voltage linear amplifier apparatus

Claim 1

A high power, high voltage linear field effect transistor amplifier apparatus comprising in combination: a plurality of field effect transistors connected in series between a +B voltage source and ground, the drain of the first field effect transistor connected to said +B voltage source, the source of the last field effect transistor connected to ground, a diode pair connected respectively between the source and the drain of adjacent series field effect transistors of said plurality of field effect transistors, a gate biasing network connected respectively between the gate and source of each field effect transistor of said plurality of field effect transistors, said gate biasing network maintaining the gate threshold voltage of each field effect transistor, and, an input signal source connected respectively to between the gate and source of each field effect transistor of said plurality of field effect transistors.