Patent US4569721A successfully refreshed from Google Patents.
US4569721A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the production of semiconductor lasers
Assignee: Sharp Corp
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Filing: 1984-08-27
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Granted: 1986-02-11
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Expires: 2004-08-27
Abstract
Abstract A method for the production of semiconductor lasers comprising: (a) forming a substrate having a striped portion on its face, said striped portion being formed into a mesa, (b) forming a current blocking layer on each of said striped portion and the remaining face of said substrate, (c) eliminating said current blocking layer only on said striped portion thereby allowing electric current to flow through the substrate and form said striped portion into a terrace or a groove, as a whole, and (d) successively laminating crystal growth layers for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate, thereby attaining stabilization of the transverse mode of laser oscillation.
Inventors
- 👤 Toshiro Hayakawa
- 👤 Nobuyuki Miyauchi
- 👤 Seiki Yano
- 👤 Takahiro Suyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:54
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; B; B82; B82Y; B82Y20/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/2234; H01S5/2235
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
113 words
A method for the production of semiconductor lasers comprising: (a) forming a substrate having a striped portion on its face, said striped portion being formed into a mesa, (b) forming a current blocking layer on each of said striped portion and the remaining face of said substrate, (c) eliminating said current blocking layer only on said striped portion thereby allowing electric current to flow through the substrate and form said striped portion into a terrace or a groove, as a whole, and (d) successively laminating crystal growth semiconductor layers for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate.
Claim 2
Independent Claim
113 words
A method for the production of semiconductor lasers comprising: (a) forming a substrate having a striped portion on its face, said striped portion being formed into a mesa, (b) forming a current blocking layer on each of said striped portion and the remaining face of said substrate, (c) eliminating said current blocking layer only on said striped portion thereby allowing electric current to flow through the substrate and form said striped portion into a terrace or a groove, as a whole, and (d) successively laminating crystal growth semiconductor layers for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate.
Claim 3
Dependent Claim
24 words
A method according to claim 1, wherein said semiconductor layers consist of one selected from the GaAlAs, InGaP, InGaAlP, InAlAs, InGaAs and InGaAsP systems.
Claim 4
Dependent Claim
17 words
A method according to claim 1, wherein said semiconductor layers are grown by molecular beam epitaxy deposition.
Claim 5
Dependent Claim
17 words
A method according to claim 2, wherein said semiconductor layers are grown by molecular beam epitaxy deposition.
Claim 6
Dependent Claim
17 words
A method according to claim 1, wherein said semiconductor layers are grown by metal-organic chemical vapor deposition.
Claim 7
Dependent Claim
17 words
A method according to claim 2, wherein said semiconductor layers are grown by metal-organic chemical vapor deposition.
References Cited (Backward Citations)
US4425650A
Cited
US4404730A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-02-10 | 1989-08-12 | 1990-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-02-10 | 1993-08-12 | 1994-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-02-10 | 1997-08-12 | 1998-02-11 | $7700.00 | Window Closed / Lapsed |