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US4568565A
Expired / Lapsed
US
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Light induced chemical vapor deposition of conductive titanium silicide films
Assignee: Honeywell International Inc
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Filing: 1984-05-14
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Granted: 1986-02-04
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Expires: 2004-05-14
Abstract
Abstract Conductive titanium silicide-containing films and composites comprising substrates and the film are produced by light induced chemical vapor deposition. The process eliminates the need to anneal the silicide film in order to produce a conductive film and overcomes the problem of substrate damage associated with high temperature deposition processes. The process comprises the steps of: exposing gas phase reactants comprising a titanium halide and a silicon containing compound to high intensity light; exposing a preheated substrate to the exposed gases to cause a conductive titanium silicide film to be formed thereon; and, maintaining the substrate, throughout the process, at a temperature below that temperature which would induce a thermal reaction between the gas phase reactants. The films and composites produced by the process are particularly suited for use in VLSI and VVLSI production.
Inventors
- 👤 Arunava Gupta
- 👤 Gary A. West
- 👤 Karl W. Beeson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:01
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01318; H10D64/0132; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/42; C23C16/44; C23C16/48; C23C16/483; H10D64/01306; H10D64/01308; H10D64/0131
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
112 words
A process for the production of films comprising titanium silicide on substrates, the process comprising the steps of: (a) providing a substrate at a processing site; (b) supplying gas phase reactants comprising a titanium halide and a silicon containing compound to the processing site; (c) exposing the gas phase reactants at the processing site to high intensity light; (d) exposing a surface of the substrate to the exposed gas phase reactants to cause a film comprising a metal silicide to be deposited thereon; and (e) maintaining the substrate, during steps (b), (c) and (d), at a predetermined temperature below that temperature which would induce a thermal reaction between the gas phase reactants.
Claim 2
Dependent Claim
112 words
A process for the production of films comprising titanium silicide on substrates, the process comprising the steps of: (a) providing a substrate at a processing site; (b) supplying gas phase reactants comprising a titanium halide and a silicon containing compound to the processing site; (c) exposing the gas phase reactants at the processing site to high intensity light; (d) exposing a surface of the substrate to the exposed gas phase reactants to cause a film comprising a metal silicide to be deposited thereon; and (e) maintaining the substrate, during steps (b), (c) and (d), at a predetermined temperature below that temperature which would induce a thermal reaction between the gas phase reactants.
Claim 3
Dependent Claim
33 words
The process of claim 1 further comprising the step of heating the substrate to the predetermined temperature by a source of heat other than the heat generated by the exposed gas phase reactants.
Claim 4
Dependent Claim
27 words
The process of claim 1 further comprising the step of heating the substrate to the predetermined temperature prior to the step of supplying the gas phase reactants.
Claim 5
Dependent Claim
21 words
The process of claim 2 wherein the substrate is heated to a temperature equal to or less than about 500° C.
Claim 6
Dependent Claim
11 words
The process of claim 1 wherein the titanium silicide is polycrystalline.
Claim 7
Dependent Claim
21 words
The process of claim 3 wherein the substrate is heated to a temperature equal to or less than about 500° C.
Claim 8
Dependent Claim
21 words
The process of claim 5 wherein the substrate is heated to a temperature equal to or less than about 500° C.
Claim 9
Dependent Claim
18 words
The process of claim 5 wherein the substrate is heated to a temperature equal to about 450° C.
Claim 10
Dependent Claim
11 words
The process of claim 3 wherein the metal silicide is polycrystalline.
Claim 11
Dependent Claim
21 words
The process of claim 9 wherein the substrate is heated to a temperature equal to or less than about 500° C.
Claim 12
Dependent Claim
17 words
The process of claim 9 wherein the substrate is heated to a temperature of about 450° C.
Claim 13
Dependent Claim
29 words
The process of claim 1 wherein the high intensity light is provided as a concentrated beam of light with an intensity of at least about 10 W/cm 2 .
Claim 14
Dependent Claim
16 words
The process of claim 12 wherein the concentrated beam of light is produced by a laser.
Claim 15
Dependent Claim
13 words
The process of claim 13 wherein the laser is a CO 2 -laser.
Claim 16
Dependent Claim
15 words
The process of claim 1 wherein the titanium halide is titanium tetrachloride or titanium tetrafluoride.
Claim 17
Dependent Claim
22 words
The process of claim 15 wherein the silicon containing compound is selected from the group consisting of Si x H 2x+2 .
Claim 18
Dependent Claim
14 words
The process of claim 15 wherein the silicon containing compound is SiH 4 .
Claim 19
Dependent Claim
21 words
The process of claim 1 wherein the gases are supplied in quantities to produce titanium silicide having a stoichiometrically unbalanced composition.
Claim 20
Dependent Claim
11 words
The process of claim 5 wherein the film further comprises silicon.
Claim 21
Dependent Claim
26 words
The process of claim 1 wherein the substrate comprises a material selected from the group consisting of alumina, silicon, polysilicon, doped polysilicon, silicon nitride and silica.
Claim 22
Dependent Claim
21 words
The process of claim 5 wherein the gases are supplied in quantities to produce titanium silicide having a stoichiometrically unbalanced composition.
Claim 23
Dependent Claim
28 words
The process of claim 1 wherein at least one of the gas phase reactants comprising the titanium halide and the silicon containing compound absorbs the high intensity light.
Claim 24
Dependent Claim
22 words
The process of claim 1 wherein the gas phase reactants also include a chemically inert gas which absorbs the high intensity light.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-02-03 | 1989-08-05 | 1990-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-02-03 | 1993-08-05 | 1994-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-02-03 | 1997-08-05 | 1998-02-04 | $7700.00 | Window Closed / Lapsed |