Patent US4566913A successfully refreshed from Google Patents.
US4566913A
Expired / Lapsed
US
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Rapid thermal annealing of silicon dioxide for reduced electron trapping
Assignee: International Business Machines Corp
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Filing: 1984-07-30
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Granted: 1986-01-28
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Expires: 2004-07-30
Abstract
Abstract Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including decreased water content and reduced trapping of electrons, by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing inert gas, to heating radiation from a halogen lamp for a duration on the order of ten seconds to achieve annealing temperature in the range 600C.-800C.
Inventors
- 👤 Marc H. Brodsky
- 👤 Zeev A. Weinberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:01
CPC Classifications
H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/004; Y10S148/118; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
57 words
A process for enhancing electronic properties of a thin silicon dioxide insulating layer on an integrated circuit wafer characterized by (a) positioning the wafer inside an enclosure; (b) charging said enclosure with a flowing inert gas; and (c) quickly heating the wafer by radiation heating to a temperature range 300 C-800 C for a duration 3-15 seconds.
Claim 2
Dependent Claim
57 words
A process for enhancing electronic properties of a thin silicon dioxide insulating layer on an integrated circuit wafer characterized by (a) positioning the wafer inside an enclosure; (b) charging said enclosure with a flowing inert gas; and (c) quickly heating the wafer by radiation heating to a temperature range 300 C-800 C for a duration 3-15 seconds.
Claim 3
Dependent Claim
55 words
A process for enhancing electronic properties of a thin silicon dioxide insulating layer on an integrated circuit wafer characterized by (a) positioning the wafer inside an enclosure; (b) charging said enclosure with flowing inert gas; and (c) quickly heating the wafer by radiation heating to a temperature of 600 C for a duration 10 seconds.
Claim 4
Dependent Claim
55 words
A process for enhancing electronic properties of a thin silicon dioxide insulating layer on an integrated circuit wafer characterized by (a) positioning the wafer inside an enclosure; (b) charging said enclosure with flowing inert gas; and (c) quickly heating the wafer by radiation heating to a temperature of 600 C for a duration 10 seconds.
Claim 5
Dependent Claim
32 words
A process for enhancing electronic properties in a thin silicon dioxide insulating layer on an integrated circuit wafer according to claim 2 further characterized in that said flowing inert gas is nitrogen.
Claim 6
Dependent Claim
32 words
A process for enhancing electronic properties in a thin silicon dioxide insulating layer on an integrated circuit wafer according to claim 2 further characterized in that said flowing inert gas is argon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-27 | 1989-07-29 | 1990-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-27 | 1993-07-29 | 1994-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-27 | 1997-07-29 | 1998-01-28 | $7700.00 | Window Closed / Lapsed |