Method of preparing sintered shapes of silicon carbide

Claim 1

A method for producing sintered silicon carbide shapes of high strength, including the steps of addition and mixing sintering assists with silicon carbide powder, and separate or simultaneous compacting and sintering of the mixture at a temperature in the range of approximately 1300° C. to 2300° C., wherein the sintering assists are selected from the group consisting of (a) a solution of at least one member selected from the group of rare earth compounds, and (b) a solution of at least one member selected from the group of rare earth compounds and another solution of at least one member selected from the group consisting of aluminum compounds and boron compounds; and when the sintering assists in group (a) are used, 0.027-11.300 atomic % of rare earth compounds are used, on a rare earth oxide basis, with the total sum of SiC and assists being 100 atomic %; and when the sintering assists in group (b) are used, 0.021-11.300 atomic % of rare earth compounds, on a rare earth oxide basis, and 0.008-12.000 atomic % of aluminum, boron and their compounds, based on their respective oxides are used, with the total sum of SiC and the assists being 100 atomic %.

Claim 2

A method for producing sintered silicon carbide shapes of high strength, including the steps of addition and mixing sintering assists with silicon carbide powder, and separate or simultaneous compacting and sintering of the mixture at a temperature in the range of approximately 1300° C. to 2300° C., wherein the sintering assists are selected from the group consisting of (a) a solution of at least one member selected from the group of rare earth compounds, and (b) a solution of at least one member selected from the group of rare earth compounds and another solution of at least one member selected from the group consisting of aluminum compounds and boron compounds; and when the sintering assists in group (a) are used, 0.027-11.300 atomic % of rare earth compounds are used, on a rare earth oxide basis, with the total sum of SiC and assists being 100 atomic %; and when the sintering assists in group (b) are used, 0.021-11.300 atomic % of rare earth compounds, on a rare earth oxide basis, and 0.008-12.000 atomic % of aluminum, boron and their compounds, based on their respective oxides are used, with the total sum of SiC and the assists being 100 atomic %.

Claim 3

A method for producing sintered silicon carbide shapes of high strength, including the steps of addition and mixing sintering assists with silicon carbide powder, and separate or simultaneous compacting and sintering of the mixture at a temperature in the range of approximately 1,300° C. to 2,300° C., wherein said sintering assists are selected from the group consisting of (a) a solution of at least one member selected from the group of rare earth compounds, and (b) a solution of at least one member selected from the group of rare earth compounds and another solution of at least one member selected from the group consisting of aluminum compounds and boron compounds; and when the sintering assists in group (a) are used, 0.027-11.300 atomic % of rare earth compounds are used, on a rare earth oxide basis, with the total sum of SiC and assists being 100 atomic %; and when the sintering assists in group (b) are used, 0.021-11.300 atomic % of rare earth compounds, on a rare earth oxide basis, and 0.006-12.000 atomic % of aluminum, boron and their compounds, based on their respective oxides are used, with the total sum of SiC and the assists being 100 atomic %, and wherein said sintering is performed in an atmosphere having a partial pressure of aluminum or aluminum compounds.

Claim 4

A method for producing sintered silicon carbide shapes of high strength, including the steps of addition and mixing sintering assists with silicon carbide powder, and separate or simultaneous compacting and sintering of the mixture at a temperature in the range of approximately 1,300° C. to 2,300° C., wherein said sintering assists are selected from the group consisting of (a) a solution of at least one member selected from the group of rare earth compounds, and (b) a solution of at least one member selected from the group of rare earth compounds and another solution of at least one member selected from the group consisting of aluminum compounds and boron compounds; and when the sintering assists in group (a) are used, 0.027-11.300 atomic % of rare earth compounds are used, on a rare earth oxide basis, with the total sum of SiC and assists being 100 atomic %; and when the sintering assists in group (b) are used, 0.021-11.300 atomic % of rare earth compounds, on a rare earth oxide basis, and 0.006-12.000 atomic % of aluminum, boron and their compounds, based on their respective oxides are used, with the total sum of SiC and the assists being 100 atomic %, and wherein said sintering is performed in an atmosphere having a partial pressure of aluminum or aluminum compounds.