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US4563598A Expired / Lapsed US ⏱️ 0.0 years remaining

Low power consuming decoder circuit for a semiconductor memory device

Assignee: Fujitsu Ltd
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Filing: 1982-12-28
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Granted: 1986-01-07
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Expires: 2002-12-28
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Abstract

Abstract The present invention is directed to a decoder circuit for a semiconductor memory device including a logic circuit for receiving an address signal as an input thereto and selecting an address in response thereto and a load in the logic circuit. The load comprises a pair of transistors connected in parallel, wherein one of the pair of transistors turns ON for a specified period in synchronization with the address signal, and the other of the pair of transistors turns ON when the logic circuit is in a selected condition and turns OFF when the logic circuit is in a non-selected condition.

Inventors

  • 👤 Atushi Oritani

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 05:13
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/413; G11C11/417; G11C11/418; G11C8/00; G11C8/10

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 222 words
A decoder circuit for a semiconductor memory device having addresses corresponding to the location of data therein, said decoder circuit comprising: power supply means; a logic circuit means comprising a NOR gate for receiving an address signal as the input thereto, an inverter means for receiving the output of said NOR gate, and an output circuit for receiving the output of said NOR gate and the output of said inverter means and for providing an output in response thereto, said output circuit being connected to said power supply means; a load means in said logic circuit means, said load means comprising a first pair of first and second transistors connected in parallel said first and second transistors being connected to said power supply means; and a clock signal generating means for generating a clock signal in response to a variation in the address signal, the clock signal having a specified time duration, said clock signal generating means being connected to said first transistor and said second transistor being connected to the output of said output circuit; wherein said first transistor turns ON for the specified time duration in synchronization with said address signal, and said second transistor turns ON when said logic circuit means is in a selected condition and turns OFF when said logic circuit means is in a non-selected condition.
Claim 2
Dependent Claim 222 words
A decoder circuit for a semiconductor memory device having addresses corresponding to the location of data therein, said decoder circuit comprising: power supply means; a logic circuit means comprising a NOR gate for receiving an address signal as the input thereto, an inverter means for receiving the output of said NOR gate, and an output circuit for receiving the output of said NOR gate and the output of said inverter means and for providing an output in response thereto, said output circuit being connected to said power supply means; a load means in said logic circuit means, said load means comprising a first pair of first and second transistors connected in parallel said first and second transistors being connected to said power supply means; and a clock signal generating means for generating a clock signal in response to a variation in the address signal, the clock signal having a specified time duration, said clock signal generating means being connected to said first transistor and said second transistor being connected to the output of said output circuit; wherein said first transistor turns ON for the specified time duration in synchronization with said address signal, and said second transistor turns ON when said logic circuit means is in a selected condition and turns OFF when said logic circuit means is in a non-selected condition.
Claim 3
Dependent Claim 62 words
A decoder circuit for a semiconductor memory device as claimed in claim 1, wherein said clock signal generating means comprises an address buffer which outputs the address signal and an inverted signal of the address signal and delayed inverter means respectively connected to both outputs of said address buffer; the output of said delayed inverter means being applied to said first transistor.
Claim 4
Dependent Claim 81 words
A decoder circuit for a semiconductor memory device as claimed in claim 2, wherein said clock signal generating means further comprises second and third pairs of transistors connected in parallel, said second and third pairs of transistors being connected respectively to said delayed inverter means; NOR circuits connected to the outputs of said second and third pair of transistors; and an inverter circuit connected to said NOR circuits; wherein the output of said inverter circuit is applied to said second transistor.
Claim 5
Dependent Claim 67 words
A decoder circuit for a semiconductor memory device as claimed in claim 1 further comprising bootstrapping means comprising a third transistor connected between said NOR gate and said output circuit; a fourth transistor connected between the connection of said output circuit and said third transistor, and a capacitor connected between the connection of said output circuit and said third transistor, and the output of said output circuit.
Claim 6
Dependent Claim 46 words
A decoder circuit for a semiconductor memory device as claimed in claim 4, wherein the output of said clock generating means is applied to the gate of said fourth transistor, and the output of said inverter means is applied to the gate of said third transistor.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-01-06 1989-07-08 1990-01-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-01-06 1993-07-08 1994-01-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-01-06 1997-07-08 1998-01-07 $7700.00 Window Closed / Lapsed

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