Resistor design system

Claim 1

A method of making a precision integrated resistor having a predetermined design resistance R and length L on a semiconductor body, said method comprising the steps of: (a) introducing dopant in selected regions of the semiconductor body to form a resistor pattern including a device resistor body of a predetermined shape and a test resistor structure having a predetermined design sheet resistance; (b) measuring the sheet resistance of the test resistor structure and determining the difference Δρ s between the measured sheet resistance and said predetermined design sheet resistance; (c) calculating by utilizing Δρ s , the adjustment in length ΔL to said design length L necessary to obtain a resistor whose resistance corresponds to said design resistance R and obtaining a new length L±ΔL; and (d) forming a pair of metal contacts contacting said device resistor body at a separation corresponding to said new length.

Claim 2

A method of making a precision integrated resistor having a predetermined design resistance R and length L on a semiconductor body, said method comprising the steps of: (a) introducing dopant in selected regions of the semiconductor body to form a resistor pattern including a device resistor body of a predetermined shape and a test resistor structure having a predetermined design sheet resistance; (b) measuring the sheet resistance of the test resistor structure and determining the difference Δρ s between the measured sheet resistance and said predetermined design sheet resistance; (c) calculating by utilizing Δρ s , the adjustment in length ΔL to said design length L necessary to obtain a resistor whose resistance corresponds to said design resistance R and obtaining a new length L±ΔL; and (d) forming a pair of metal contacts contacting said device resistor body at a separation corresponding to said new length.

Claim 3

A method of making a precision integrated resistor having a predetermined design resistance R and design length L on a semiconductor body, said method comprising the steps of: (a) introducing dopant in selected regions of the semiconductor body to form a resistor pattern including a device resistor body of a predetermined shape and a test resistor structure having a predetermined design sheet resistance ρ s d and design width; (b) measuring the sheet resistance ρ s m of the test resistor structure and obtaining the difference Δρ s between the design and measured sheet resistance values and the variation ΔW in design width; (c) calculating by utilizing Δρ s and ΔW the adjustment in length ΔL to said design length L necessary to obtain a resistor whose resistance corresponds to said design resistance R and obtaining a new length L±ΔL; and (d) forming a pair of metal contacts contacting said device resistor body at a separation corresponding to said new length.

Claim 4

A method of making a precision integrated resistor having a predetermined design resistance R and design length L on a semiconductor body, said method comprising the steps of: (a) introducing dopant in selected regions of the semiconductor body to form a resistor pattern including a device resistor body of a predetermined shape and a test resistor structure having a predetermined design sheet resistance ρ s d and design width; (b) measuring the sheet resistance ρ s m of the test resistor structure and obtaining the difference Δρ s between the design and measured sheet resistance values and the variation ΔW in design width; (c) calculating by utilizing Δρ s and ΔW the adjustment in length ΔL to said design length L necessary to obtain a resistor whose resistance corresponds to said design resistance R and obtaining a new length L±ΔL; and (d) forming a pair of metal contacts contacting said device resistor body at a separation corresponding to said new length.

Claim 10

A method of forming a plurality of integrated circuit resistors on a semiconductor substrate, said resistors each having predetermined design resistance R i (i=1,2,3 . . . ) and lengths L i (i=1, 2, 3 . . . ), said method comprising: (a) introducing dopant in selected areas of the substrate to form a plurality of resistor bodies as a precursor to said resistors and a test resistor structure having a predetermined design sheet resistance ρ s d ; (b) measuring the sheet resistance of said test structure and determining the deviation Δρ s of said design sheet resistance from the measured sheet resistance; (c) calculating, by utilizing the Δρ s , the necessary adjustment in length ΔL to said design lengths to obtain resistors whose resistances corresponds precisely to their design resistances R i and obtaining their new lengths L i ±ΔL; and (d) forming a contact level layer which is sensitive to E-beam on said substrate; and (e) supplying said adjustment in length ΔL to an E-beam generating system to form a pair of contact areas on each of said resistor bodies at a separation corresponding to said new lengths L i ±ΔL; and (f) forming metal contacts in said contact areas.

Claim 11

A method of forming a plurality of integrated circuit resistors on a semiconductor substrate, said resistors each having predetermined design resistance R i (i=1,2,3 . . . ) and lengths L i (i=1, 2, 3 . . . ), said method comprising: (a) introducing dopant in selected areas of the substrate to form a plurality of resistor bodies as a precursor to said resistors and a test resistor structure having a predetermined design sheet resistance ρ s d ; (b) measuring the sheet resistance of said test structure and determining the deviation Δρ s of said design sheet resistance from the measured sheet resistance; (c) calculating, by utilizing the Δρ s , the necessary adjustment in length ΔL to said design lengths to obtain resistors whose resistances corresponds precisely to their design resistances R i and obtaining their new lengths L i ±ΔL; and (d) forming a contact level layer which is sensitive to E-beam on said substrate; and (e) supplying said adjustment in length ΔL to an E-beam generating system to form a pair of contact areas on each of said resistor bodies at a separation corresponding to said new lengths L i ±ΔL; and (f) forming metal contacts in said contact areas.

Claim 12

A method of forming a plurality of integrated circuit resistors on a semiconductor substrate, said resistors each having predetermined design resistances R i (i=1, 2, 3 . . . ) and lengths L i (i=1, 2, 3 . . . ), said method comprising the steps of: (a) introducing dopant in selected areas of the substrate to form a plurality of resistor bodies as a precursor to said resistors and a test resistor structure having a design sheet resistance ρ s d , said test resistor structure consisting of a side-by-side arrangement of a relatively narrow test resistor bar of design width W 1 and a relatively wide test resistor bar of design width W 2 ; (b) measuring the resistance values R 1 and R 2 corresponding to an identical length L 1 of said narrow and wide test resistor bars, respectively, and calculating the deviation in design width ΔW by using the relationship ΔW=(W 2 R 2 -W 1 R 1 )/(R 1 -R 2 ); and obtaining the difference Δρ s between the measured sheet resistance ρ s m and design sheet resistance ρ s d by the relationships ρ.sub.s.sup.m =(W.sub.2 -W.sub.1)R.sub.1 R.sub.2 /L.sub.1 (R.sub.1 -R.sub.2) and Δρ=ρ.sub.s.sup.m -ρ.sub.s.sup.d ; (c) calculating by utilizing said ΔW and Δρ s the adjustment in length ΔL to said design lengths L i (i=1, 2, 3 . . . ) necessary to obtain resistors whose resistances correspond precisely to their design resistances R i (i=1, 2, 3 . . . ) and obtaining the new lengths L i ±ΔL of said resistors; (d) forming a contact level layer sensitive to E-beam on said substrate; (e) supplying said adjustments in length to an E-beam generating system to form a pair of contact areas on each of said resistor bodies at a separation corresponding to said new lengths L i ±ΔL; and (f) forming metal contacts in said contact areas.

Claim 13

A method of forming a plurality of integrated circuit resistors on a semiconductor substrate, said resistors each having predetermined design resistances R i (i=1, 2, 3 . . . ) and lengths L i (i=1, 2, 3 . . . ), said method comprising the steps of: (a) introducing dopant in selected areas of the substrate to form a plurality of resistor bodies as a precursor to said resistors and a test resistor structure having a design sheet resistance ρ s d , said test resistor structure consisting of a side-by-side arrangement of a relatively narrow test resistor bar of design width W 1 and a relatively wide test resistor bar of design width W 2 ; (b) measuring the resistance values R 1 and R 2 corresponding to an identical length L 1 of said narrow and wide test resistor bars, respectively, and calculating the deviation in design width ΔW by using the relationship ΔW=(W 2 R 2 -W 1 R 1 )/(R 1 -R 2 ); and obtaining the difference Δρ s between the measured sheet resistance ρ s m and design sheet resistance ρ s d by the relationships ρ.sub.s.sup.m =(W.sub.2 -W.sub.1)R.sub.1 R.sub.2 /L.sub.1 (R.sub.1 -R.sub.2) and Δρ=ρ.sub.s.sup.m -ρ.sub.s.sup.d ; (c) calculating by utilizing said ΔW and Δρ s the adjustment in length ΔL to said design lengths L i (i=1, 2, 3 . . . ) necessary to obtain resistors whose resistances correspond precisely to their design resistances R i (i=1, 2, 3 . . . ) and obtaining the new lengths L i ±ΔL of said resistors; (d) forming a contact level layer sensitive to E-beam on said substrate; (e) supplying said adjustments in length to an E-beam generating system to form a pair of contact areas on each of said resistor bodies at a separation corresponding to said new lengths L i ±ΔL; and (f) forming metal contacts in said contact areas.

Claim 14

A method of making a precision resistor having a predetermined design resistance R and length L on a substrate, said method comprising the steps of: (a) forming a material of a predetermined design sheet resistance in a pattern on said substrate, said pattern including a resistor body of a predetermined shape and a test resistor structure; (b) measuring the sheet resistance of said test structure; (c) determining the difference Δρ s between the measured sheet resistance and the design sheet resistance; (d) calculating by utilizing Δρ s the necessary adjustment in length ΔL to said design length L to obtain a resistor whose resistance precisely corresponds to said design resistance R; (e) calculating a new length L±ΔL; and (f) forming a pair of highly conductive contacts contacting said resistor body at a relative separation corresponding to said new length.

Claim 15

A method of making a precision resistor having a predetermined design resistance R and length L on a substrate, said method comprising the steps of: (a) forming a material of a predetermined design sheet resistance in a pattern on said substrate, said pattern including a resistor body of a predetermined shape and a test resistor structure; (b) measuring the sheet resistance of said test structure; (c) determining the difference Δρ s between the measured sheet resistance and the design sheet resistance; (d) calculating by utilizing Δρ s the necessary adjustment in length ΔL to said design length L to obtain a resistor whose resistance precisely corresponds to said design resistance R; (e) calculating a new length L±ΔL; and (f) forming a pair of highly conductive contacts contacting said resistor body at a relative separation corresponding to said new length.

Claim 16

A method of making a precision resistor having a predetermined design resistance R and length L on a substrate, said method comprising the steps of: (a) forming a material of a predetermined design sheet resistance in a pattern on said substrate, said pattern including a resistor body of a predetermined shape and a test resistor structure having a predetermined design width; (b) measuring the sheet resistance of said pattern by measuring the resistance of said test structure; (c) determining the difference Δρ s between the measured and design sheet resistances; (d) determining the variation ΔW in said design width; (e) calculating by utilizing Δρ s and ΔW the adjustment in length L necessary to obtain from said resistor body a resistor whose resistance precisely corresponds to said design resistance; (f) calculating a new length L±ΔL; and (g) forming a pair of highly conductive contacts contacting said resistor body at a relative distance corresponding to said new length.

Claim 17

A method of making a precision resistor having a predetermined design resistance R and length L on a substrate, said method comprising the steps of: (a) forming a material of a predetermined design sheet resistance in a pattern on said substrate, said pattern including a resistor body of a predetermined shape and a test resistor structure having a predetermined design width; (b) measuring the sheet resistance of said pattern by measuring the resistance of said test structure; (c) determining the difference Δρ s between the measured and design sheet resistances; (d) determining the variation ΔW in said design width; (e) calculating by utilizing Δρ s and ΔW the adjustment in length L necessary to obtain from said resistor body a resistor whose resistance precisely corresponds to said design resistance; (f) calculating a new length L±ΔL; and (g) forming a pair of highly conductive contacts contacting said resistor body at a relative distance corresponding to said new length.