US3879236A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a semiconductor resistor
Assignee: International Business Machines Corp
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Filing: 1973-02-02
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Granted: 1975-04-22
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Expires: 1993-02-02
Abstract
Abstract A diffused resistor structure and method for fabrication which produces the resistor electrical contacts below the surface of the semiconductor device. The resistor structure includes a resistor region of a first conductivity type surrounded at the surface of the region by a region of a second conductivity. At least two spaced semiconductor electrical contacts of a first conductivity are made to the resistor region. The contacts are below the surface of the resistor structure. Electrical contacts are provided on the surface of the structure spaced from the resistor region and electrically connected to the two spaced semiconductor contacts below the surface of the resistor structure.
Inventors
- 👤 Jack L Langdon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:43
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/43; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/085; Y10S148/145
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
109 words
A METHOD FOR FORMING A SEMICONDUCTOR RESISTOR STRUCTURE COMPRISING: INTRODUCING DOPANT ATOMS BELOW THE SURFACE OF A SEMICONDUCTOR SUBSTRATE SO AS TO FORM CONTACTS BELOW THE SURFACE OF SAID SUBSTRATE; INTRODUCING DOPANT ATOMS INTO SAID SUBSTRATE SO AS TO FORM A RESISTOR OF LOWER VALUE OF CONDUCTIVITY THAN, AND OF THE SAME CONDUCTIVITY TYPE AS, SAID SEMICONDUCTOR CONTACTS ABOVE THE SURFACES OF SAID SEMICONDUCTOR CONTACTS, SO AS TO MAKE PHYSICAL CONTACT WITH SAID SPACED SEMICONDUCTOR CONTACTS; AND MAKING ELECTRICAL CONTACT FROM SAID SPACED SEMICONDUCTOR CONTACTS TO THE SURFACE OF SAID SUBSTRATE, SAID SURFACE ELECTRICAL CONTACTS BEING SPACED FROM SAID RESISTOR SO AS NOT TO MAKE CONTACT WITH SAID RESISTOR.
Claim 2
Independent Claim
109 words
A METHOD FOR FORMING A SEMICONDUCTOR RESISTOR STRUCTURE COMPRISING: INTRODUCING DOPANT ATOMS BELOW THE SURFACE OF A SEMICONDUCTOR SUBSTRATE SO AS TO FORM CONTACTS BELOW THE SURFACE OF SAID SUBSTRATE; INTRODUCING DOPANT ATOMS INTO SAID SUBSTRATE SO AS TO FORM A RESISTOR OF LOWER VALUE OF CONDUCTIVITY THAN, AND OF THE SAME CONDUCTIVITY TYPE AS, SAID SEMICONDUCTOR CONTACTS ABOVE THE SURFACES OF SAID SEMICONDUCTOR CONTACTS, SO AS TO MAKE PHYSICAL CONTACT WITH SAID SPACED SEMICONDUCTOR CONTACTS; AND MAKING ELECTRICAL CONTACT FROM SAID SPACED SEMICONDUCTOR CONTACTS TO THE SURFACE OF SAID SUBSTRATE, SAID SURFACE ELECTRICAL CONTACTS BEING SPACED FROM SAID RESISTOR SO AS NOT TO MAKE CONTACT WITH SAID RESISTOR.
Claim 3
Independent Claim
110 words
A method for forming a semiconductor resistor structure comprising: introducing dopant atoms below the surface of a semiconductor substrate so as to form contacts below the surface of said substrate; introducing dopant atoms into said substrate so as to form a resistor of a lower value of conductivity than, and of the same conductivity type as, said semiconductor contacts above the surfaces of said semiconductor contacts, so as to make physical contact with said spaced semiconductor contacts; and making electrical contact from said spaced semiconductor contacts to the surface of said substrate, said surface electrical contacts being spaced from said resistor so as not to make contact with said resistor.
Claim 4
Independent Claim
110 words
A method for forming a semiconductor resistor structure comprising: introducing dopant atoms below the surface of a semiconductor substrate so as to form contacts below the surface of said substrate; introducing dopant atoms into said substrate so as to form a resistor of a lower value of conductivity than, and of the same conductivity type as, said semiconductor contacts above the surfaces of said semiconductor contacts, so as to make physical contact with said spaced semiconductor contacts; and making electrical contact from said spaced semiconductor contacts to the surface of said substrate, said surface electrical contacts being spaced from said resistor so as not to make contact with said resistor.
Claim 5
Dependent Claim
54 words
In a method for forming a semiconductor resistor structure of claim 1 wherein said spaced semiconductor contacts are formed by the steps including forming regions of a desired impurity type in the semiconductor substrate and growing an epitaxial layer over said substrate which results in an extension of said regions into said epitaxial layer.
Claim 6
Dependent Claim
30 words
In a method for forming a semiconductor resistor structure of claim 2 wherein said forming a resistor and said making electrical contact steps are made simultaneously by a single diffusion.
Claim 7
Dependent Claim
42 words
In a method for forming a semiconductor resistor structure of claim 3 wherein metal layers are deposited on the surface of said structure to form an electrical contact to the said spaced semiconductor cOntacts, said metal layers are spaced from said resistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-04-21 | 1978-10-21 | 1979-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-04-21 | 1982-10-21 | 1983-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-04-21 | 1986-10-21 | 1987-04-22 | $7700.00 | Window Closed / Lapsed |