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US4557943A
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Metal-silicide deposition using plasma-enhanced chemical vapor deposition
Assignee: ASM America Inc
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Filing: 1983-10-31
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Granted: 1985-12-10
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Expires: 2003-10-31
Abstract
Abstract A method for deposition of thin conductive layers of low resistivity titanium silicide. The method comprises the co-deposition of titanium and silicon by plasma-enhanced chemical vapor deposition at a low temperature. An anneal above the deposition temperature reduces the layer resistivity, making the layer especially suitable for microelectronic applications.
Inventors
- 👤 Richard S. Rosler
- 👤 George M. Engle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:05
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/42; H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
75 words
A method for the chemical vapor deposition of a low-resistivity composite layer comprising titanium silicide on a substrate by low-pressure plasma-enhanced vapor deposition, comprising the steps of: depositing a thin layer of silicon on said substrate; depositing a layer of titanium silicide on said thin layer of silicon by reacting a gaseous silicon species and a gaseous titanium species in a low-pressure plasma; and depositing another layer of silicon on said layer of titanium silicide.
Claim 2
Independent Claim
75 words
A method for the chemical vapor deposition of a low-resistivity composite layer comprising titanium silicide on a substrate by low-pressure plasma-enhanced vapor deposition, comprising the steps of: depositing a thin layer of silicon on said substrate; depositing a layer of titanium silicide on said thin layer of silicon by reacting a gaseous silicon species and a gaseous titanium species in a low-pressure plasma; and depositing another layer of silicon on said layer of titanium silicide.
Claim 3
Dependent Claim
20 words
The method of claim 1, where said gaseous silicon species comprises silane and said gaseous titanium species comprises titanium tetrachloride.
Claim 4
Dependent Claim
26 words
The method of claim 1, further including annealing said composite conductive layer at a temperature higher than the temperature at which said deposition steps are effected.
Claim 5
Dependent Claim
19 words
The method of claim 3 wherein said annealing is at a temperature of about 600° to about 700° C.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-12-09 | 1989-06-10 | 1989-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-12-09 | 1993-06-10 | 1993-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-12-09 | 1997-06-10 | 1997-12-10 | $7700.00 | Window Closed / Lapsed |