Patent US4556584A successfully refreshed from Google Patents.
US4556584A
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Method for providing substantially waste-free chemical vapor deposition of thin-film on semiconductor substrates
Assignee: BTU Engineering Corp
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Filing: 1984-05-03
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Granted: 1985-12-03
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Expires: 2004-05-03
Abstract
Abstract A method is disclosed for providing substantially effluent-waste free vacuum chemical vapor deposition of thin-film on semiconductor substrates. A first comparatively low efficiency diffusion furnace deposits selected thin-film on the semiconductor substrates. A second comparatively high-efficiency diffusion furnace operative in response to the effluent-waste stream of the first diffusion furnace deposits substantially all of the effluent-waste on throw-away baffles.
Inventors
- 👤 Robert F. Sarkozy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 22:37
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/4412; Y; Y10; Y10S; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
89 words
A method for providing substantially waste-free chemical vapor deposition (CVD) of thin-film on semiconductor substrates, comprising the steps of: depositing selected thin-film on semiconductor substrates in a first chemical vapor deposition (CVD) reaction chamber of a diffusion furnace by a first comparatively low-efficiency CVD reaction that produces a substantial effluent-waste stream; and depositing substantially all of the effluent-waste stream on the surfaces of elements provided therefor by a second comparatively high-efficiency CVD reaction different from the first comparatively low-efficiency CVD reaction in a second chemical vapor deposition diffusion furnace.
Claim 2
Independent Claim
89 words
A method for providing substantially waste-free chemical vapor deposition (CVD) of thin-film on semiconductor substrates, comprising the steps of: depositing selected thin-film on semiconductor substrates in a first chemical vapor deposition (CVD) reaction chamber of a diffusion furnace by a first comparatively low-efficiency CVD reaction that produces a substantial effluent-waste stream; and depositing substantially all of the effluent-waste stream on the surfaces of elements provided therefor by a second comparatively high-efficiency CVD reaction different from the first comparatively low-efficiency CVD reaction in a second chemical vapor deposition diffusion furnace.
Claim 3
Dependent Claim
24 words
The method of claim 1, further including the step of removing the semiconductor substrates from the reaction chamber after the thin-film is deposited thereon.
Claim 4
Dependent Claim
20 words
The method of claim 2, wherein said reaction chamber is defined in a vacuum chemical vapor deposition (V-CVD) diffusion furnace.
Claim 5
Dependent Claim
22 words
The method of claim 1, futher including the step of disposing of the elements after the effluent-waste stream has been deposited thereon.
Claim 6
Dependent Claim
20 words
The method of claim 4 wherein, said reaction chamber is defined in a ultraviolet chemical vapor deposition (UV-CVD) diffusion furnace.
Claim 7
Independent Claim
93 words
A method for substantially eliminating the effluent-waste of a vacuum chemical vapor deposition diffusion furnace of the type that deposits selected thin-film on semiconductor substrates by a first comparatively low-efficiency vacuum chemical vapor deposition reaction that produces a considerable effluent-waste stream consisting of excess unreacted reactants in gas phase, comprising the steps of: directing the effluent-waste stream into a reaction chamber of another vacuum chemical vapor deposition furnace; and depositing substantially all of the effluent-waste stream on disposable material positioned in the reaction chamber by a second comparatively high-efficiency chemical vapor deposition reaction.
Claim 8
Independent Claim
93 words
A method for substantially eliminating the effluent-waste of a vacuum chemical vapor deposition diffusion furnace of the type that deposits selected thin-film on semiconductor substrates by a first comparatively low-efficiency vacuum chemical vapor deposition reaction that produces a considerable effluent-waste stream consisting of excess unreacted reactants in gas phase, comprising the steps of: directing the effluent-waste stream into a reaction chamber of another vacuum chemical vapor deposition furnace; and depositing substantially all of the effluent-waste stream on disposable material positioned in the reaction chamber by a second comparatively high-efficiency chemical vapor deposition reaction.
Claim 9
Dependent Claim
20 words
The method of claim 6, wherein said high-efficiency chemical vapor deposition reaction is a photosensitized vacuum chemical vapor deposition reaction.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-12-02 | 1989-06-03 | 1989-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-12-02 | 1993-06-03 | 1993-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-12-02 | 1997-06-03 | 1997-12-03 | $7700.00 | Window Closed / Lapsed |