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US4554030A
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Method of manufacturing a semiconductor device by means of a molecular beam technique
Assignee: JONG TIM DE
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Filing: 1984-03-02
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Granted: 1985-11-19
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Expires: 2004-03-02
Abstract
Abstract A monocrystalline layer of one semiconductor material is grown onto a surface of a monocrystalline semiconductor body by means of molecular beam epitaxy. During such growth, the semiconductor body is kept at such a low temperature that a non-monocrystalline layer is obtained. The non-monocrystalline layer is then converted by a heat treatment into a monocrystalline form. Accordingly, an abrupt junction between the two semiconductor materials is obtained.
Inventors
- 👤 Jan Haisma
- 👤 Poul K. Larsen
- 👤 Tim De Jong
- 👤 Johannes F. Van der Veen
- 👤 Willem A. S. Douma
- 👤 Frans W. Saris
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:46
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/22; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/36; H10P14/3602; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/007; Y10S148/025; Y10S148/123; Y10S148/169
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
108 words
A method of manufacturing a semiconductor device comprising the steps of providing a first monocrystalline semiconductor layer of a first material having a surface region, forming a second semiconductor layer of a second material onto said surface region of said first layer by a molecular beam particle deposition technique, said second layer being formed at a first temperature providing a non-monocrystalline semiconductor layer, said molecular beam particle deposition technique forming a particle beam of at least one of atoms and molecules of said second semiconductor layer, and thereafter heating said non-monocrystalline semiconductor layer to a second temperature for converting said non-monocrystalline semiconductor layer into a monocrystalline semiconductor layer.
Claim 2
Independent Claim
108 words
A method of manufacturing a semiconductor device comprising the steps of providing a first monocrystalline semiconductor layer of a first material having a surface region, forming a second semiconductor layer of a second material onto said surface region of said first layer by a molecular beam particle deposition technique, said second layer being formed at a first temperature providing a non-monocrystalline semiconductor layer, said molecular beam particle deposition technique forming a particle beam of at least one of atoms and molecules of said second semiconductor layer, and thereafter heating said non-monocrystalline semiconductor layer to a second temperature for converting said non-monocrystalline semiconductor layer into a monocrystalline semiconductor layer.
Claim 3
Dependent Claim
41 words
A method according to claim 1, wherein said first semiconductor layer is a material of group III-V of the periodic system of elements, and wherein said second semiconductor layer is a material of group IV of the periodic system of elements.
Claim 4
Dependent Claim
21 words
A method according to claim 2, wherein said first semiconductor layer is gallium phosphide and said second semiconductor layer is silicon.
Claim 5
Dependent Claim
36 words
A method according to claim 3, wherein during deposition of said second layer, said first temperature is maintained below 100° C., and wherein said second temperature is provided within a range between 450° to 650° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-11-18 | 1989-05-20 | 1989-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-11-18 | 1993-05-20 | 1993-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-11-18 | 1997-05-20 | 1997-11-19 | $7700.00 | Window Closed / Lapsed |