US4553315A
Expired / Lapsed
US
⏱️ 0.0 years remaining
N Contact compensation technique
Assignee: Harris Corp
•
Filing: 1984-04-05
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Granted: 1985-11-19
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Expires: 2004-04-05
Abstract
Abstract The contact for N channel devices in a CMOS process is formed by ion implanting N-type impurities through contact apertures in the dielectric layer to a depth less than the source and drain regions and a layer of conductive material is applied without intermediate etching and delineated.
Inventors
- 👤 Chris McCarty
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:42
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10P30/202; H10P30/204; H10P30/28; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; Y; Y10; Y10S; Y10S148/00; Y10S148/083
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
123 words
A method of fabricating contacts to CMOS devices having N and P conductivity type source and drain regions in P and N conductivity type body regions respectively of a substrate, a gate oxide layer and gate layer, a field oxide layer on said substrate adjacent said source and drain regions comprising: forming a dielectric layer covering said substrate; removing portions of said dielectric layer to expose contact areas of said source and drain regions; ion implanting N type impurities into said contact areas of said N type source and drain regions to form a contact region of a shallower depth than said source and drain regions; and applying a layer of conductor material without intermediate etching and delineating to form contacts and interconnects.
Claim 2
Independent Claim
123 words
A method of fabricating contacts to CMOS devices having N and P conductivity type source and drain regions in P and N conductivity type body regions respectively of a substrate, a gate oxide layer and gate layer, a field oxide layer on said substrate adjacent said source and drain regions comprising: forming a dielectric layer covering said substrate; removing portions of said dielectric layer to expose contact areas of said source and drain regions; ion implanting N type impurities into said contact areas of said N type source and drain regions to form a contact region of a shallower depth than said source and drain regions; and applying a layer of conductor material without intermediate etching and delineating to form contacts and interconnects.
Claim 3
Dependent Claim
52 words
The method according to claim 1 wherein said P type source and drains are formed to have a higher impurity concentration than said P type body region and said implantation step introduces impurities to have a concentration greater than P type body and less than said P type source and drain regions.
Claim 4
Dependent Claim
39 words
The method according to claim 1 including forming a mask layer over said exposed P type source and drain contact areas using a low temperature process prior to implantation and removing said mask layer before applying said conductor material.
Claim 5
Dependent Claim
12 words
The method according to claim 1 wherein said conductor material is aluminum.
Claim 6
Dependent Claim
35 words
The method according to claim 1 wherein said field oxide is formed by localized oxidation and has depth into the surface of said body regions at least the depth of said source and drain regions.
Claim 7
Dependent Claim
24 words
The method according to claim 1 wherein said source and drain regions are formed aligned with the adjacent edge of said field oxide layer.
Claim 8
Dependent Claim
25 words
The method according to claim 1 further comprising activating said ion implanted impurities is at a temperature in the range of 700° to 900° Centigrade.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-11-18 | 1989-05-20 | 1989-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-11-18 | 1993-05-20 | 1993-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-11-18 | 1997-05-20 | 1997-11-19 | $7700.00 | Window Closed / Lapsed |