Patent US4552824A successfully refreshed from Google Patents.
US4552824A
Expired / Lapsed
US
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Electrophotographic photosensitive member and process for production thereof
Assignee: Canon Inc
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Filing: 1985-01-28
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Granted: 1985-11-12
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Expires: 2005-01-28
Abstract
Abstract A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.
Inventors
- 👤 Yutaka Hirai
- 👤 Toshiyuki Komatsu
- 👤 Katsumi Nakagawa
- 👤 Teruo Misumi
- 👤 Tadaji Fukuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 23:39
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/16; C23C14/0021; C23C14/0036; C23C14/0057; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/455; C23C16/45523; C23C16/50; C23C16/505; C23C16/507; C23C16/509; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/08228; G03G5/08235; G03G5/08242; G03G5/08278; H; H10; H10F; H10F30/00; H10F30/10; H10F30/15; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
36 words
An electrophotographic photosensitive member comprising a substrate for electrophotography and a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen to provide high dark resistance and high SN ratio for electrophotographic processing.
Claim 2
Dependent Claim
36 words
An electrophotographic photosensitive member comprising a substrate for electrophotography and a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen to provide high dark resistance and high SN ratio for electrophotographic processing.
Claim 3
Dependent Claim
18 words
An electrophotosensitive member according to claim 1, further comprising a barrier layer in contact with the photoconductive layer.
Claim 4
Dependent Claim
17 words
An electrophotographic photosensitive member according to claim 1, further comprising a covering layer on the photoconductive layer.
Claim 5
Dependent Claim
63 words
An electrophotographic photosensitive member comprising a substrate and, overlying the substrate, a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen to provide characteristics suitable for electrophotography including high dark resistance and a high SN ratio and, overlying the photoconductive layer, a layer having a refractive index between the refractive index of the photoconductive layer and that of air.
Claim 6
Dependent Claim
63 words
An electrophotographic photosensitive member comprising a substrate and, overlying the substrate, a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen to provide characteristics suitable for electrophotography including high dark resistance and a high SN ratio and, overlying the photoconductive layer, a layer having a refractive index between the refractive index of the photoconductive layer and that of air.
Claim 7
Dependent Claim
52 words
An electrophotographic photosensitive member comprising a substrate and overlying the substrate, a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen to provide characteristics suitable for electrophotography including high dark resistance and a high SN ratio and, overlying the photoconductive layer, a covering layer of an insulating material.
Claim 8
Dependent Claim
52 words
An electrophotographic photosensitive member comprising a substrate and overlying the substrate, a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen to provide characteristics suitable for electrophotography including high dark resistance and a high SN ratio and, overlying the photoconductive layer, a covering layer of an insulating material.
Claim 9
Dependent Claim
61 words
An electrophotographic photosensitive member comprising a substrate and, overlying the substrate, a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen to provide characteristics suitable for electrophotography including high dark resistance and a high SN ratio and, in contact with photoconductive layer, a barrier layer capable of preventing injection of electric charge carriers into the photoconductive member.
Claim 10
Dependent Claim
61 words
An electrophotographic photosensitive member comprising a substrate and, overlying the substrate, a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen to provide characteristics suitable for electrophotography including high dark resistance and a high SN ratio and, in contact with photoconductive layer, a barrier layer capable of preventing injection of electric charge carriers into the photoconductive member.
Claim 11
Dependent Claim
50 words
A photosensitive member according to claim 1 in which the photoconductive layer contains an impurity selected from the group consisting of a Group IIIA impurity in amounts from 10 -6 to 10 -3 atomic percent or a Group V impurity in amounts from 10 -8 to 10 -5 atomic percent.
Claim 12
Dependent Claim
21 words
The electrophotographic photosensitive member according to claim 4, further comprising a barrier layer interposed between the substrate and the photoconductive layer.
Claim 13
Dependent Claim
51 words
The electrophotographic photosensitive member according to claim 4 in which the photoconductive layer contains an impurity selected from the group consisting of a Group IIIA impurity in amounts from 10 -6 to 10 -3 atomic percent or a Group V impurity in amounts from 10 -8 to 10 -5 atomic percent.
Claim 14
Dependent Claim
19 words
An electrophotographic photosensitive member according to claim 5, further comprising a barrier layer in contact with the photoconductive layer.
Claim 15
Dependent Claim
51 words
The electrophotographic photosensitive member according to claim 6 in which the photoconductive layer contains an impurity selected from the group consisting of a Group IIIA impurity in amounts from 10 -6 to 10 -3 atomic percent or a Group V impurity in amounts from 10 -8 to 10 -5 atomic percent.
Claim 16
Dependent Claim
58 words
An electrophotographic process comprising the steps of: charging an electrophotographic photosensitive member comprising a substrate and a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen, said photoconductive layer having a high dark resistance and high SN ratio for electrophotographic processing; and applying electromagnetic waves to said photosensitive member thereby forming an electrostatic image.
Claim 17
Dependent Claim
58 words
An electrophotographic process comprising the steps of: charging an electrophotographic photosensitive member comprising a substrate and a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen, said photoconductive layer having a high dark resistance and high SN ratio for electrophotographic processing; and applying electromagnetic waves to said photosensitive member thereby forming an electrostatic image.
Claim 18
Dependent Claim
22 words
The process according to claim 12 in which the photosensitive member further comprising a barrier layer in contact with the photoconductive layer.
Claim 19
Dependent Claim
20 words
The process according to claim 12 in which the photosensitive member further comprising a covering layer on the photoconductive layer.
Claim 20
Dependent Claim
86 words
An electrophotographic process comprising the steps of: charging an electrophotographic photosensitive member comprising a substrate and, overlying the substrate, a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen, said photoconductive layer having characteristics suitable for electrophotography including high dark resistance and a high SN ratio and, overlying the photoconductive layer, a layer having a refractive index between the refractive index of the photoconductive layer and that of air; and applying electromagnetic waves to said photosensitive member thereby forming an electrostatic image.
Claim 21
Dependent Claim
86 words
An electrophotographic process comprising the steps of: charging an electrophotographic photosensitive member comprising a substrate and, overlying the substrate, a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen, said photoconductive layer having characteristics suitable for electrophotography including high dark resistance and a high SN ratio and, overlying the photoconductive layer, a layer having a refractive index between the refractive index of the photoconductive layer and that of air; and applying electromagnetic waves to said photosensitive member thereby forming an electrostatic image.
Claim 22
Dependent Claim
75 words
An electrophotograhic process comprising the steps of: charging an electrophotographic photosensitive member comprising a substrate and, overlying the substrate, a photoconductive layer comprising an amorphous silicon and containing 10-40 atoms % of hydrogen, said photoconductive layer having characteristics suitable for electrophotography including high dark resistance and a high SN ratio and, overlying the photoconductive layer, a covering layer of an insulating material; and applying electromagnetic waves to said photosensitive member thereby forming an electrostatic image.
Claim 23
Dependent Claim
75 words
An electrophotograhic process comprising the steps of: charging an electrophotographic photosensitive member comprising a substrate and, overlying the substrate, a photoconductive layer comprising an amorphous silicon and containing 10-40 atoms % of hydrogen, said photoconductive layer having characteristics suitable for electrophotography including high dark resistance and a high SN ratio and, overlying the photoconductive layer, a covering layer of an insulating material; and applying electromagnetic waves to said photosensitive member thereby forming an electrostatic image.
Claim 24
Dependent Claim
90 words
An electrophotographic process comprising the steps of: charging an electrophotographic photosensitive member comprising a substrate and, overlying the substrate, a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen, said photoconductive layer having characteristics suitable for electrophotography including high dark resistance and a high SN ratio and, in contact with photoconductive layer, a barrier layer capable of preventing injection of electric charge carriers into the photoconductive layer during charging of the photosensitive member; and applying electromagnetic waves to said photosensitive member thereby forming an electrostatic image.
Claim 25
Dependent Claim
90 words
An electrophotographic process comprising the steps of: charging an electrophotographic photosensitive member comprising a substrate and, overlying the substrate, a photoconductive layer comprising an amorphous silicon and containing 10-40 atomic % of hydrogen, said photoconductive layer having characteristics suitable for electrophotography including high dark resistance and a high SN ratio and, in contact with photoconductive layer, a barrier layer capable of preventing injection of electric charge carriers into the photoconductive layer during charging of the photosensitive member; and applying electromagnetic waves to said photosensitive member thereby forming an electrostatic image.
Claim 26
Dependent Claim
49 words
The process according to claim 12 in which the photoconductive layer contains an impurity selected from the group consisting of a Group IIIA impurity in amounts from 10 -6 to 10 -3 atomic percent of a Group V impurity in amounts from 10 -8 to 10 -5 atomic percent.
Claim 27
Dependent Claim
24 words
The process according to claim 15, in which the photosensitive member further comprises a barrier layer interposed between the substrate and the photoconductive layer.
Claim 28
Dependent Claim
49 words
The process according to claim 15 in which the photoconductive layer contains an impurity selected from the group consisting of a Group IIIA impurity in amounts from 10 -6 to 10 -3 atomic percent or a Group V impurity in amounts from 10 -8 to 10 -5 atomic percent.
Claim 29
Dependent Claim
22 words
The process according to claim 16 in which the photosensitive member further comprises a barrier layer in contact with the photoconductive layer.
Claim 30
Dependent Claim
49 words
The process accoridng to claim 16 in which the photoconductive layer contains an impurity selected from the group consisting of a Group IIIA impurity in amounts from 10 -6 to 10 -3 atomic percent or a Group V impurity in amounts from 10 -8 to 10 -5 atomic percent.
Claim 31
Dependent Claim
49 words
The process according to claim 17 in which the photoconductive layer contains an impurity selected from the group consisting of a Group IIIA impurity in amounts from 10 -6 to 10 -3 atomic percent or a Group V impurity in amounts from 10 -8 to 10 -5 atomic percent.
Claim 32
Dependent Claim
49 words
A photosensitive member comprising a substrate and photoconductive layer comprising hydrogenated amorphous silicon and containing 10-40 atomic % of hydrogen, said photoconductive layer being fabricated by a decomposition of a silicon hydride gas selected from the group consisting of Si 2 H 6 or Si 4 H 10 .
Claim 33
Dependent Claim
49 words
A photosensitive member comprising a substrate and photoconductive layer comprising hydrogenated amorphous silicon and containing 10-40 atomic % of hydrogen, said photoconductive layer being fabricated by a decomposition of a silicon hydride gas selected from the group consisting of Si 2 H 6 or Si 4 H 10 .
Claim 34
Dependent Claim
18 words
A photosensitive member according to claim 24, further comprising a barrier layer in contact with the photoconductive layer.
Claim 35
Dependent Claim
31 words
A photosensitive member according to claim 24, further comprising a layer, overlying the photoconductive layer, having a refractive index between the refractive index of the photoconductive layer and that of air.
Claim 36
Dependent Claim
16 words
A photosensitive member according to claim 24, further comprising a covering layer overlying the photoconductive layer.
Claim 37
Dependent Claim
18 words
A photosensitive member according to claim 24, in which the covering layer is composed of an insulating material.
Claim 38
Dependent Claim
67 words
A photosensitive member comprising a substrate and a photoconductive layer comprising hydrogenated amorphous silicon and at least one member selected from B, Al, Ga, In and Tl in amounts from the group consisting of 10 -6 to 10 -3 atomic percent and N, P, As, Sb and Bi in amounts from 10 -8 to 10 -5 atomic percent, said photoconductive layer containing 10-40 atomic percent of hydrogen.
Claim 39
Dependent Claim
67 words
A photosensitive member comprising a substrate and a photoconductive layer comprising hydrogenated amorphous silicon and at least one member selected from B, Al, Ga, In and Tl in amounts from the group consisting of 10 -6 to 10 -3 atomic percent and N, P, As, Sb and Bi in amounts from 10 -8 to 10 -5 atomic percent, said photoconductive layer containing 10-40 atomic percent of hydrogen.
Claim 40
Dependent Claim
18 words
A photosensitive member according to claim 29, further comprising a barrier layer in contact with the photoconductive layer.
Claim 41
Dependent Claim
16 words
A photosensitive member according to claim 29, further comprising a covering layer overlying the photoconductive layer.
Claim 42
Dependent Claim
18 words
A photosensitive member according to claim 31, in which the covering layer is composed of an insulating material.
Claim 43
Dependent Claim
35 words
A photosensitive member according to claim 29, further comprising a layer, overlying the photoconductive layer, having a refractive index between the refractive inded between the refractive index of the photoconductive layer and that of air.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-11-11 | 1989-05-13 | 1989-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-11-11 | 1993-05-13 | 1993-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-11-11 | 1997-05-13 | 1997-11-12 | $7700.00 | Window Closed / Lapsed |