Anode and cathode connections for the practice of electromigration

Claim 2

A connection useful for the practice of electromigration comprising: (a) a layer of insulating material, said layer of insulating material being situated on and overlying a preselected major surface of a body of single crystal semiconductor material and having at least one window therethrough, said window having therein a deposit of metal to be electromigrated, said deposit being in contact with said major surface of said body, and (b) a layer of a conducting material situated on and overlying said layer of insulating material and being in contact with said deposit.

Claim 3

The connection of claim 1 wherein said layer of a conducting material comprises a layer of a metal having a melting temperature lower than the electromigration temperature.

Claim 4

The connection of claim 2 wherein said metal is gallium.

Claim 5

The connection of claim 1 wherein said layer of a conducting material comprises a layer of a material having a melting temperature higher than the electromigration temperature.

Claim 6

The connection of claim 4 wherein said material is a mat in the form of interwoven carbon fibers.

Claim 7

A connection useful in the practice of electromigration comprising: (a) a first layer of a conducting refractory metal overlying and contiguous with the first major surface of a body of single crystal semiconductor material and overlaying at least one deposit of a metal to be electromigrated, said deposit being situated on said first major surface, and (b) a first layer of a different conducting material overlying and contiguous with said first layer of a refractory metal.

Claim 8

A connection useful in the practice of electromigration comprising: (a) a first layer of a conducting refractory metal overlying and contiguous with the first major surface of a body of single crystal semiconductor material and overlaying at least one deposit of a metal to be electromigrated, said deposit being situated on said first major surface, and (b) a first layer of a different conducting material overlying and contiguous with said first layer of a refractory metal.

Claim 9

The connection of claim 6 wherein said first layer of a conducting material comprises a layer of a metal having a melting temperature lower than the electromigration temperature.

Claim 10

The connection of claim 7 wherein said metal is gallium.

Claim 11

The connection of claim 6 wherein said layer of a conducting material comprises a layer of a material having a melting temperature higher than the electromigration temperature.

Claim 12

The connection of claim 9 wherein said conducting material is a mat in the form of interwoven carbon fibers.

Claim 13

Connections useful in electromigrating a liquid metal inclusion in a body of single crystal semiconductor material, said body having first and second major opposed surfaces, an outer peripheral edge area interconnecting said first and second opposed surfaces, a first preselected type conductivity, a first preselected resistivity, and a preferred crystallographic relationship between the plane of at least said first major surface and the crystallographic direction parallel to the perpendicularly measured distance between said major surfaces, said connections comprising in combination: (a) a first connection, said first connection having a first layer of an insulating material situated on and overlying said first major surface and having at least one window therethrough, said window having therein a deposit of the metal to be electromigrated, said deposit being in contact with said first major surface, and a first layer of a different conducting material situated on and overlying said first layer of insulating material and being in contact with said deposit; and (b) a second connection, said second connection having a second layer of an insulating material situated on and overlying said second major surface and having at least one window therethrough, said window having therein a deposit of a refractory metal, said deposit of conducting refractory metal being an contact with said second major surface, and a second layer of a different conducting material situated on and overlying said second layer of an insulating material and being in contact with said deposit.

Claim 14

Connections useful in electromigrating a liquid metal inclusion in a body of single crystal semiconductor material, said body having first and second major opposed surfaces, an outer peripheral edge area interconnecting said first and second opposed surfaces, a first preselected type conductivity, a first preselected resistivity, and a preferred crystallographic relationship between the plane of at least said first major surface and the crystallographic direction parallel to the perpendicularly measured distance between said major surfaces, said connections comprising in combination: (a) a first connection, said first connection having a first layer of an insulating material situated on and overlying said first major surface and having at least one window therethrough, said window having therein a deposit of the metal to be electromigrated, said deposit being in contact with said first major surface, and a first layer of a different conducting material situated on and overlying said first layer of insulating material and being in contact with said deposit; and (b) a second connection, said second connection having a second layer of an insulating material situated on and overlying said second major surface and having at least one window therethrough, said window having therein a deposit of a refractory metal, said deposit of conducting refractory metal being an contact with said second major surface, and a second layer of a different conducting material situated on and overlying said second layer of an insulating material and being in contact with said deposit.

Claim 15

The connections of claim 11 further including a layer of refractory metal between said deposit of the metal to be electromigrated and said first layer of a conducting material.

Claim 16

The connections of claim 11 further including electrical contacts with said first and second layers of a conducting material.

Claim 17

The connections of claim 11 wherein said first and second layers of a conducting material comprise layers of a metal having a melting temperature lower than the electromigration temperature.

Claim 18

The connections of claim 14 wherein said metal is gallium.

Claim 19

The connections of claim 11 wherein said first and second layers of a conducting material comprise layers of a material having a melting temperature higher than the electromigration temperature.

Claim 20

The connections of claim 16 wherein said conducting material is a mat in the form of interwoven carbon fibers.

Claim 21

The connections of claim 11 wherein said window in said second layer of an insulating material has substantially the same geometric configuration as said window in said first layer of insulating material.

Claim 22

The connections of claim 18 wherein said window in said second layer of insulating material is situated substantially opposite from said window in said first layer of insulating material.

Claim 23

The connections of claim 18 wherein said window in said second layer of insulating material is situated in relationship to said window in said first layer of insulating material whereby a first axis passing substantially through the geometric center of the area of said first surface exposed by said opening of said window in said first layer of insulating material and passing substantially through the geometric center of the area of said second surface exposed by said opening of said window in said second layer of insulating material intersects and forms angle α with a second axis passing substantially through the geometric center of the area of said first surface exposed by said opening of said window in said first layer of insulating material and being substantially perpendicular to said major surfaces.

Claim 24

The connections of claim 20 wherein said angle α is less than or equal to about 45°.

Claim 25

A connection useful for the practice of electromigation comprising: (a) a layer of insulating material, said layer of insulating material being situated on and overlying a preselected major surface of a body of single crystal semiconductor material and having at least one window therethrough, said window having therein a deposit of metal to be electromigrated, (b) a layer of refractory metal on said layer of insulating material, and (c) a layer of conducting material situated on and overlaying said layer of refractory material.

Claim 26

A connection useful for the practice of electromigation comprising: (a) a layer of insulating material, said layer of insulating material being situated on and overlying a preselected major surface of a body of single crystal semiconductor material and having at least one window therethrough, said window having therein a deposit of metal to be electromigrated, (b) a layer of refractory metal on said layer of insulating material, and (c) a layer of conducting material situated on and overlaying said layer of refractory material.