US4381598A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making anode and cathode connections for electromigration
Assignee: Bayer AG
•
Filing: 1981-06-11
•
Granted: 1983-05-03
•
Expires: 2001-06-11
Abstract
Abstract In the electromigration process, liquid metal inclusions are migrated into or through bodies of semiconductor material by an electrical potential gradient driving force. The method of this invention provides anode and cathode connections generally useful in the practice of electromigration and connections which are especially useful in circumventing the adverse effects of several types of rectifying junctions encountered in the practice of electromigration.
Inventors
- 👤 Thomas R. Anthony
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:43
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/02; C30B13/06; Y; Y10; Y10S; Y10S438/00; Y10S438/927; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
162 words
A method for making connections useful in the practice of electromigration comprising the steps of: (a) providing a body of single crystal semiconductor material, said body having first and second major opposed surfaces, an outer peripheral edge area interconnecting said first and second opposed surfaces, a first preselected type conductivity, a first preselected resistivity, and a preferred crystallographic relationship between the plane of at least said first major surface and the crystallographic direction parallel to the perpendicularly measured distance between said major surfaces; (b) forming a first layer of an insulating material on said first major surface; (c) opening at least one window in said first layer of insulating material thereby exposing an area of said first major surface; (d) establishing in said window in contact with said first major surface a deposit of the metal to be electromigrated; and (e) applying a first layer of a conducting material over said first layer of insulating material and in contact with said deposit.
Claim 2
Independent Claim
162 words
A method for making connections useful in the practice of electromigration comprising the steps of: (a) providing a body of single crystal semiconductor material, said body having first and second major opposed surfaces, an outer peripheral edge area interconnecting said first and second opposed surfaces, a first preselected type conductivity, a first preselected resistivity, and a preferred crystallographic relationship between the plane of at least said first major surface and the crystallographic direction parallel to the perpendicularly measured distance between said major surfaces; (b) forming a first layer of an insulating material on said first major surface; (c) opening at least one window in said first layer of insulating material thereby exposing an area of said first major surface; (d) establishing in said window in contact with said first major surface a deposit of the metal to be electromigrated; and (e) applying a first layer of a conducting material over said first layer of insulating material and in contact with said deposit.
Claim 3
Dependent Claim
30 words
The method of claim 1 further comprising the step of providing a layer of a refractory metal over said deposit prior to applying said first layer of a conducting material.
Claim 4
Dependent Claim
21 words
The method of claim 1 further comprising the step of providing an electrical contact with said first layer of conducting material.
Claim 5
Dependent Claim
89 words
The method of claim 1 further comprising the steps of: (i) forming a layer of insulating material on said second major surface; (ii) opening at least one window in said second layer of insulating material thereby exposing an area of said second major surface; (iii) establishing in said window in contact with said second major surface a deposit of a refractory metal; and (iv) applying a second layer of a conducting material over said second layer of insulating material and in contact with said deposit of a refractory metal.
Claim 6
Dependent Claim
36 words
The method of claim 4 wherein said opening step comprises opening a window in said second layer of insulating material having substantially the same geometric configuration as said window in said first layer of insulating material.
Claim 7
Dependent Claim
29 words
The method of claim 5 wherein said window in said second layer of insulating material is situated substantially opposite from said window in said first layer of insulating material.
Claim 8
Dependent Claim
132 words
The method of claim 5 wherein said window in said second layer of insulating material is situated in relationship to said window in said first layer of insulating material whereby a first axis passing substantially through the geometric center of the area of said first surface exposed by said opening of said window in said first layer of insulating material and passing substantially through the geometric center of the area of said second surface exposed by said opening of said window in said second layer of insulating material intersects and forms angle α with a second axis passing substantially through the geometric center of the area of said first surface exposed by said opening of said window in said first layer of insulating material and being substantially perpendicular to said major surfaces.
Claim 9
Dependent Claim
17 words
The method of claim 7 wherein said angle α is less than or equal to about 45°.
Claim 10
Dependent Claim
21 words
The method of claim 4 further comprising the step of providing an electrical contact with said second layer of conducting material.
Claim 11
Independent Claim
174 words
A method for making connections useful in the practice of electromigration comprising the steps of: (a) providing a body of single crystal semiconductor material, said body having first and second major opposed surfaces, an outer peripheral edge area interconnecting said first and second opposed surfaces, a first preselected type conductivity, a first preselected resistivity, and a preferred crystallographic relationship between the plane of at least said first major surface and the crystallographic direction parallel to the perpendicularly measured distance between said major surfaces; (b) forming a first layer of an insulating material on said first major surface; (c) opening at least one window in said first layer of insulating material thereby exposing an area of said first major surface; (d) establishing in said window in contact with said first major surface a deposit of the metal to be electromigrated; and (e) applying a first layer of a conducting material over said first layer of insulating material and in contact with said deposit, said conducting material having a melting temperature lower than the electromigration temperature.
Claim 12
Independent Claim
174 words
A method for making connections useful in the practice of electromigration comprising the steps of: (a) providing a body of single crystal semiconductor material, said body having first and second major opposed surfaces, an outer peripheral edge area interconnecting said first and second opposed surfaces, a first preselected type conductivity, a first preselected resistivity, and a preferred crystallographic relationship between the plane of at least said first major surface and the crystallographic direction parallel to the perpendicularly measured distance between said major surfaces; (b) forming a first layer of an insulating material on said first major surface; (c) opening at least one window in said first layer of insulating material thereby exposing an area of said first major surface; (d) establishing in said window in contact with said first major surface a deposit of the metal to be electromigrated; and (e) applying a first layer of a conducting material over said first layer of insulating material and in contact with said deposit, said conducting material having a melting temperature lower than the electromigration temperature.
Claim 13
Dependent Claim
30 words
The method of claim 10 further comprising the step of providing a layer of a refractory metal over said deposit prior to applying said first layer of a conducting material.
Claim 14
Dependent Claim
21 words
The method of claim 10 further comprising the step of providing an electrical contact with said first layer of conducting material.
Claim 15
Dependent Claim
11 words
The method of claim 10 wherein said conducting material is gallium.
Claim 16
Dependent Claim
101 words
The method of claim 10 further comprising the steps of: (i) forming a layer of insulating material on said second major surface; (ii) opening at least one window in said second layer of insulating material thereby exposing an area of said second major surface; (iii) establishing in said window in contact with said second major surface a deposit of a refractory metal; and (iv) applying a second layer of a conducting material over said second layer of insulating material and in contact with said deposit of a refractory metal, said conducting material having a melting temperature lower than the electromigration temperature.
Claim 17
Dependent Claim
11 words
The method of claim 14 wherein said conducting material is gallium.
Claim 18
Dependent Claim
36 words
The method of claim 14 wherein said opening step comprises opening a window in said second layer of insulating material having substantially the same geometric configuration as said window in said first layer of insulating material.
Claim 19
Dependent Claim
29 words
The method of claim 16 wherein said window in said second layer of insulating material is situated substantially opposite from said window in said first layer of insulating material.
Claim 20
Dependent Claim
132 words
The method of claim 16 wherein said window in said second layer of insulating material is situated in relationship to said window in said first layer of insulating material whereby a first axis passing substantially through the geometric center of the area of said first surface exposed by said opening of said window in said first layer of insulating material and passing substantially through the geometric center of the area of said second surface exposed by said opening of said window in said second layer of insulating material intersects and forms angle α with a second axis passing substantially through the geometric center of the area of said first surface exposed by said opening of said window in said first layer of insulating material and being substantially perpendicular to said major surfaces.
Claim 21
Dependent Claim
17 words
The method of claim 18 wherein said angle α is less than or equal to about 45°.
Claim 22
Dependent Claim
21 words
The method of claim 14 further comprising the step of providing an electrical contact with said second layer of conducting material.
Claim 23
Independent Claim
174 words
A method for making connections useful in the practice of electromigration comprising the steps of: (a) providing a body of single crystal semiconductor material, said body having first and second major opposed surfaces, an outer peripheral edge area interconnecting said first and second opposed surfaces, a first preselected type conductivity, a first preselected resistivity, and a preferred crystallographic relationship between the plane of at least said first major surface and the crystallographic direction parallel to the perpendicularly measured distance between said major surfaces; (b) forming a first layer of an insulating material on said first major surface; (c) opening at least one window in said first layer of insulating material thereby exposing an area of said first major surface; (d) establishing in said window in contact with said first major surface a deposit of the metal to be electromigrated; and (e) applying a first layer of a conducting material over said first layer of insulating material and in contact with said deposit, said conducting material having a melting temperature higher than the electromigration temperature.
Claim 24
Independent Claim
174 words
A method for making connections useful in the practice of electromigration comprising the steps of: (a) providing a body of single crystal semiconductor material, said body having first and second major opposed surfaces, an outer peripheral edge area interconnecting said first and second opposed surfaces, a first preselected type conductivity, a first preselected resistivity, and a preferred crystallographic relationship between the plane of at least said first major surface and the crystallographic direction parallel to the perpendicularly measured distance between said major surfaces; (b) forming a first layer of an insulating material on said first major surface; (c) opening at least one window in said first layer of insulating material thereby exposing an area of said first major surface; (d) establishing in said window in contact with said first major surface a deposit of the metal to be electromigrated; and (e) applying a first layer of a conducting material over said first layer of insulating material and in contact with said deposit, said conducting material having a melting temperature higher than the electromigration temperature.
Claim 25
Dependent Claim
30 words
The method of claim 21 further comprising the step of providing a layer of a refractory metal over said deposit prior to applying said first layer of a conducting material.
Claim 26
Dependent Claim
21 words
The method of claim 21 further comprising the step of providing an electrical contact with said first layer of conducting material.
Claim 27
Dependent Claim
19 words
The method of claim 21 wherein said conducting material is a mat in the form of interwoven carbon fibers.
Claim 28
Dependent Claim
101 words
The method of claim 21 further comprising the steps of: (i) forming a layer of insulating material on said second major surface; (ii) opening at least one window in said second layer of insulating material thereby exposing an area of said second major surface; (iii) establishing in said window in contact with said second major surface a deposit of a refractory metal; and (iv) applying a second layer of a conducting material over said second layer of insulating material and in contact with said deposit of a refractory metal, said conducting material having a melting temperature higher than the electromigration temperature.
Claim 29
Dependent Claim
19 words
The method of claim 25 wherein said conducting material is a mat in the form of interwoven carbon fibers.
Claim 30
Dependent Claim
36 words
The method of claim 25 wherein said opening step comprises opening a window in said second layer of insulating material having substantially the same geometric configuration as said window in said first layer of insulating material.
Claim 31
Dependent Claim
29 words
The method of claim 27 wherein said window in said second layer of insulating material is situated substantially opposite from said window in said first layer of insulating material.
Claim 32
Dependent Claim
132 words
The method of claim 27 wherein said window in said second layer of insulating material is situated in relationship to said window in said first layer of insulating material whereby a first axis passing substantially through the geometric center of the area of said first surface exposed by said opening of said window in said first layer of insulating material and passing substantially through the geometric center of the area of said second surface exposed by said opening of said window in said second layer of insulating material intersects and forms angle α with a second axis passing substantially through the geometric center of the area of said first surface exposed by said opening of said window in said first layer of insulating material and being substantially perpendicular to said major surfaces.
Claim 33
Dependent Claim
17 words
The method of claim 29 wherein said angle α is less than or equal to about 45°.
Claim 34
Dependent Claim
21 words
The method of claim 21 further comprising the step of providing an electrical contact with said second layer of conducting material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-05-02 | 1986-11-01 | 1987-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-02 | 1990-11-01 | 1991-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-02 | 1994-11-01 | 1995-05-03 | $7700.00 | Window Closed / Lapsed |