US4546375A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Vertical IGFET with internal gate and method for making same
Assignee: Fairchild Semiconductor Corp
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Filing: 1982-11-05
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Granted: 1985-10-08
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Expires: 2002-11-05
Abstract
Abstract A vertical IGFET comprising a substantially planar silicon wafer with a source electrode on one major surface and a drain electrode on the opposite major surface is disclosed. An insulated gate electrode, which includes a conductive finger portion surrounded by an insulating layer, is internally disposed in the silicon wafer such that a predetermined voltage applied to the gate electrode will regulate a current flow between the source and drain electrodes. The device is fabricated utilizing an epitaxial lateral overgrowth technique for depositing monocrystalline silicon over the insulated gate which is disposed on a silicon substrate.
Inventors
- 👤 Scott C. Blackstone
- 👤 Lubomir L. Jastrzebski
- 👤 John F. Corboy, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:08
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/63; H10D30/01; H10D30/021; H10D30/025; H10D30/635; H10D30/64; H10D30/66; H10D30/668; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/512; H10D64/513; Y; Y10; Y10S; Y10S148/00; Y10S148/019; Y10S148/123; Y10S148/126
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
153 words
A vertical, enhancement-type IGFET device, comprising: a monocrystalline silicon wafer having first and second opposing major surfaces; a substantially planar source electrode disposed on the first surface; a drain electrode disposed on the second surface; and an insulated gate electrode having a doped polycrystalline silicon conductive finger portion which is surrounded by an insulating layer and by monocrystalline silicon, said insulated gate electrode being internally disposed within the monocrystalline silicon wafer, the silicon that is disposed between the finger and each of the major surfaces being of first conductivity type so as to form a source region at the first surface and a drain region at the second surface, and the silicon that is disposed adjacent to the finger and between the source and drain regions being of second conductivity type, such that a predetermined voltage applied to the insulated gate electrode will regulate a current flow between the source and drain electrodes.
Claim 2
Dependent Claim
153 words
A vertical, enhancement-type IGFET device, comprising: a monocrystalline silicon wafer having first and second opposing major surfaces; a substantially planar source electrode disposed on the first surface; a drain electrode disposed on the second surface; and an insulated gate electrode having a doped polycrystalline silicon conductive finger portion which is surrounded by an insulating layer and by monocrystalline silicon, said insulated gate electrode being internally disposed within the monocrystalline silicon wafer, the silicon that is disposed between the finger and each of the major surfaces being of first conductivity type so as to form a source region at the first surface and a drain region at the second surface, and the silicon that is disposed adjacent to the finger and between the source and drain regions being of second conductivity type, such that a predetermined voltage applied to the insulated gate electrode will regulate a current flow between the source and drain electrodes.
Claim 3
Dependent Claim
20 words
A device in accordance with claim 1, wherein the insulated gate electrode further comprises: a plurality of conductive finger portions.
Claim 4
Dependent Claim
25 words
A device in accordance with claim 2, wherein: said finger portions are disposed on a plane which is substantially parallel to the major wafer surfaces.
Claim 5
Dependent Claim
17 words
A device in accordance with claim 2, wherein: said finger portions are arranged in a ladder-shaped pattern.
Claim 6
Dependent Claim
19 words
A device in accordance with claim 1, wherein: the insulating layer surrounding the conductive finger portion comprises silicon dioxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-07 | 1989-04-08 | 1989-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-07 | 1993-04-08 | 1993-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-07 | 1997-04-08 | 1997-10-08 | $7700.00 | Window Closed / Lapsed |