US4145700A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Power field effect transistors
Assignee: International Business Machines Corp
•
Filing: 1977-08-08
•
Granted: 1979-03-20
•
Expires: 1997-08-08
Abstract
Abstract A power metal-oxide-semiconductor field-effect transistor (MOSFET) having high switching speed capabilities is shown. The high switching speed is facilitated by narrow channel length which is defined by the difference in lateral diffusion junctions of the P substrate and N source diffusions. The high current capability is produced by the large channel width. The high voltage capability is caused by the use of FET substrate P diffusions designed to be located apart from one another by very small distances. Unbiased or floating P diffusions are designed to flank the outer peripheries of P substrate diffusions. The close proximity of the adjacent P substrate diffusions reduces the electric field in the curvature portion of the P diffusion junctions in the N - silicon body at their inner peripheries, while the presence of the unbiased P diffusions at the appropriate distance from the outer peripheries of P substrate diffusions reduces the electric field in the curvature region of the P substrate diffusions at their outer peripheries. The N silicon body forms the drain region.
Inventors
- 👤 Chakrapani G. Jambotkar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:52
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/665; H10D30/01; H10D30/021; H10D30/028; H10D30/0291; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D62/106; H10D62/124; H10D62/126; H10D62/127
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
131 words
A MOSFET device having high current and high voltage characteristics comprising: an N substrate having a plurality of P regions therein; N regions in said P regions in at least in the inner area of the device; said P regions in the outermost area of said device are unbiased so as to improve the drain-to-substrate reverse breakdown voltage; said P regions being arranged in pairs in the said inner area of the device; an insulated gate contact above peripheries of said pairs and said N regions in said pairs contacted as the sources of said device; and means for connection the said N substrate as the common drain for said device which includes a contact to the side of said device opposite to the side having said N and P regions.
Claim 2
Dependent Claim
131 words
A MOSFET device having high current and high voltage characteristics comprising: an N substrate having a plurality of P regions therein; N regions in said P regions in at least in the inner area of the device; said P regions in the outermost area of said device are unbiased so as to improve the drain-to-substrate reverse breakdown voltage; said P regions being arranged in pairs in the said inner area of the device; an insulated gate contact above peripheries of said pairs and said N regions in said pairs contacted as the sources of said device; and means for connection the said N substrate as the common drain for said device which includes a contact to the side of said device opposite to the side having said N and P regions.
Claim 3
Dependent Claim
31 words
The MOSFET device of claim 1 wherein said plurality of P regions are formed substantially identical, and said N regions are located only in said P regions being arranged in pairs.
Claim 4
Dependent Claim
26 words
The MOSFET device of claim 2 wherein said N substrate is in part an epitaxial layer and said P regions are formed in said epitaxial layer.
Claim 5
Dependent Claim
21 words
The MOSFET device of claim 3 wherein said epitaxial layer is N- and the remaining portion of said substrate is N+.
Claim 6
Dependent Claim
30 words
The MOSFET device of claim 3 wherein the P junction depth is between about 2 to 7 micrometers and the N junction depth is between about 1 to 4 micrometers.
Claim 7
Dependent Claim
22 words
The MOSFET device of claim 3 wherein the channel length under the said gate contacts is between about 1 to 5 micrometers.
Claim 8
Dependent Claim
23 words
The MOSFET device of claim 5 wherein the distance between said pairs of said P regions is between about 4 to 10 micrometers.
Claim 9
Dependent Claim
35 words
The MOSFET device of claim 6 wherein the said outermost annular P regions are between about 30 to 50 micrometers between one another and the outer peripheries of the said pairs of said P regions.
Claim 10
Dependent Claim
149 words
A MOSFET device having high current and high voltage characteristics comprising: a P substrate having a plurality of N regions therein; P regions in said N regions in the inner area of the device; said N regions in the outermost area of said device are unbiased so as to improve the drain-to-substrate reverse breakdown voltage; said N regions being arranged in pairs in the said inner area of the device; said N regions in the outermost area of said device are unbiased so as to improve the drain-to-substrate reverse breakdown voltage; an insulated gate contact above peripheries of said pairs and said P regions in said pairs contacted as the sources of said device; and means for connecting the said P substrate as the common drain for said device which includes a contact to the side of said device opposite to the side having said N and P regions.
Claim 11
Dependent Claim
149 words
A MOSFET device having high current and high voltage characteristics comprising: a P substrate having a plurality of N regions therein; P regions in said N regions in the inner area of the device; said N regions in the outermost area of said device are unbiased so as to improve the drain-to-substrate reverse breakdown voltage; said N regions being arranged in pairs in the said inner area of the device; said N regions in the outermost area of said device are unbiased so as to improve the drain-to-substrate reverse breakdown voltage; an insulated gate contact above peripheries of said pairs and said P regions in said pairs contacted as the sources of said device; and means for connecting the said P substrate as the common drain for said device which includes a contact to the side of said device opposite to the side having said N and P regions.
References Cited (Backward Citations)
US3756876A
Cited
US3845495A
Cited
US4003072A
Cited
US3926694A
Cited
US3909320A
Cited
US4072975A
Cited
US4070690A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-03-19 | 1982-09-18 | 1983-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-03-19 | 1986-09-18 | 1987-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-03-19 | 1990-09-18 | 1991-03-20 | $7700.00 | Window Closed / Lapsed |