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US4544239A
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Compressed bismuth-containing garnet films of replicable low anisotropy field value and devices utilizing same
Assignee: Northrop Grumman Guidance and Electronics Co Inc
•
Filing: 1983-03-16
•
Granted: 1985-10-01
•
Expires: 2003-03-16
Abstract
Abstract The invention relates to a magnetically switchable magneto optic composite comprising an epitaxial film supported on a non-magnetic garnet substrate. The film is a bismuth-containing film which is in compression, contains a combination of cations providing a net negative magneto-strictive coefficient, has a positive value anisotropy field, a low collapse field and high figure of merit. The film is easily switchable utilizing z-y coincident drive lines and the composite can readily be formed into a chip comprising an array of switchable optically active pixels. Also disclosed are light valves, optical printers, microwave signal processors and magneto-optic light deflectors comprising the described magneto-optic light composites.
Inventors
- 👤 Michael F. Shone
- 👤 Roger F. Belt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:12
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/09; G02F1/092; G02F1/0009; G02F1/0036; H; H01; H01F; H01F10/00; H01F10/08; H01F10/10; H01F10/18; H01F10/20; H01F10/24; H01F10/245; Y; Y10; Y10S; Y10S428/00; Y10S428/90; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12687
Claims Analysis
Total Claims: 304
Claim 1
Independent Claim
238 words
A magnetically switchable magneto-optic element of high Faraday rotation comprising a monocrystalline gadolinium garnet substrate and an epitaxial film supported by said substrate, said epitaxial film being nominally represented by the formula: Bi.sub.x M.sub.3-x-z Q'.sub.z' Fe.sub.5-y-z Ga.sub.y Q.sub.z O.sub.12 wherein: M is selected from the group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y, Sm, Gd and combinations thereof; Q is selected from the group consisting of Mn 3+ , In 3+ , Sc 3+ , Sb 3+ , Al 3+ , Ge 4+ , V 5+ and combinations thereof; Q' is a charge-balancing cation having a valence lower than 3+ which is present where Q is comprised of a cation having a valence higher than 3+, Q' being present in an amount such that charge balance is maintained; the values of x, y, z and z' are as follows: 0<x≦1.9 0≦y≦1.35 0≦z≦1.0 0≦z'≦1.0 y+z≦1.4 the epitaxial film is in compression caused by lattice differential between substrate and epitaxial film, said epitaxial film having a lattice constant greater than said substrate; the combination of the cations comprising said epitaxial film provides a net negative magneto-strictive coefficient; the anisotropy field of the epitaxial film is a positive value up to about 8,000 gauss; the collapse field of said epitaxial film has a positive value up to about 120 oersteds; and, the Faraday rotation of said epitaxial film is at least about 0.7 degrees per micron at 632 nm.
Claim 2
Dependent Claim
238 words
A magnetically switchable magneto-optic element of high Faraday rotation comprising a monocrystalline gadolinium garnet substrate and an epitaxial film supported by said substrate, said epitaxial film being nominally represented by the formula: Bi.sub.x M.sub.3-x-z Q'.sub.z' Fe.sub.5-y-z Ga.sub.y Q.sub.z O.sub.12 wherein: M is selected from the group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y, Sm, Gd and combinations thereof; Q is selected from the group consisting of Mn 3+ , In 3+ , Sc 3+ , Sb 3+ , Al 3+ , Ge 4+ , V 5+ and combinations thereof; Q' is a charge-balancing cation having a valence lower than 3+ which is present where Q is comprised of a cation having a valence higher than 3+, Q' being present in an amount such that charge balance is maintained; the values of x, y, z and z' are as follows: 0<x≦1.9 0≦y≦1.35 0≦z≦1.0 0≦z'≦1.0 y+z≦1.4 the epitaxial film is in compression caused by lattice differential between substrate and epitaxial film, said epitaxial film having a lattice constant greater than said substrate; the combination of the cations comprising said epitaxial film provides a net negative magneto-strictive coefficient; the anisotropy field of the epitaxial film is a positive value up to about 8,000 gauss; the collapse field of said epitaxial film has a positive value up to about 120 oersteds; and, the Faraday rotation of said epitaxial film is at least about 0.7 degrees per micron at 632 nm.
Claim 3
Dependent Claim
15 words
The switchable magneto-optic element of claim 1 wherein M is Tm, Yb, Y or Lu.
Claim 4
Dependent Claim
11 words
The switchable magneto-optic element of claim 2 wherein M is Tm.
Claim 5
Dependent Claim
33 words
The switchable magneto-optic element of claim 1 wherein the epitaxial film has three sublattice magnetizations which for a compensation point outside the temperature range of from about 243° K. to about 373° K.
Claim 6
Dependent Claim
19 words
The switchable magneto-optic element of claim 1 wherein the anisotropy field is from about 300 to about 3,500 gauss.
Claim 7
Dependent Claim
19 words
The switchable magneto-optic element of claim 2 wherein the anisotropy field is from about 300 to about 3,500 gauss.
Claim 8
Dependent Claim
19 words
The switchable magneto-optic element of claim 3 wherein the anisotropy field is from about 300 to about 3,500 gauss.
Claim 9
Dependent Claim
19 words
The switchable magneto-optic element of claim 6 wherein the anisotropy field is from about 300 to about 3,500 gauss.
Claim 10
Dependent Claim
19 words
The switchable magneto-optic element of claim 1 wherein the anisotropy field is from about 1,400 to about 1,600 gauss.
Claim 11
Dependent Claim
19 words
The switchable magneto-optic element of claim 2 wherein the anisotropy field is from about 1,400 to about 1,600 gauss.
Claim 12
Dependent Claim
19 words
The switchable magneto-optic element of claim 3 wherein the anisotropy field is from about 1,400 to about 1,600 gauss.
Claim 13
Dependent Claim
19 words
The switchable magneto-optic element of claim 6 wherein the anisotropy field is from about 1,400 to about 1,600 gauss.
Claim 14
Dependent Claim
24 words
The switchable magneto-optic element of claim 1 wherein the epitaxial film has a collapse field of from about 20 oersteds to about 90 oersteds.
Claim 15
Dependent Claim
24 words
The switchable magneto-optic element of claim 2 wherein the epitaxial film has a collapse field of from about 20 oersteds to about 90 oersteds.
Claim 16
Dependent Claim
24 words
The switchable magneto-optic element of claim 3 wherein the epitaxial film has a collapse field of from about 20 oersteds to about 90 oersteds.
Claim 17
Dependent Claim
24 words
The switchable magneto-optic element of claim 6 wherein the epitaxial film has a collapse field of from about 20 oersteds to about 90 oersteds.
Claim 18
Dependent Claim
24 words
The switchable magneto-optic element of claim 8 wherein the epitaxial film has a collapse field of from about 20 oersteds to about 90 oersteds.
Claim 19
Dependent Claim
24 words
The switchable magneto-optic element of claim 9 wherein the epitaxial film has a collapse field of from about 20 oersteds to about 90 oersteds.
Claim 20
Dependent Claim
24 words
The switchable magneto-optic element of claim 12 wherein the epitaxial film has a collapse field of from about 20 oersteds to about 90 oersteds.
Claim 21
Dependent Claim
24 words
The switchable magneto-optic element of claim 1 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 22
Dependent Claim
24 words
The switchable magneto-optic element of claim 2 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 23
Dependent Claim
24 words
The switchable magneto-optic element of claim 3 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 24
Dependent Claim
24 words
The switchable magneto-optic element of claim 6 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 25
Dependent Claim
24 words
The switchable magneto-optic element of claim 8 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 26
Dependent Claim
24 words
The switchable magneto-optic element of claim 9 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 27
Dependent Claim
24 words
The switchable magneto-optic element of claim 12 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 28
Dependent Claim
24 words
The switchable magneto-optic element of claim 13 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 29
Dependent Claim
24 words
The switchable magneto-optic element of claim 14 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 30
Dependent Claim
24 words
The switchable magneto-optic element of claim 15 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 31
Dependent Claim
24 words
The switchable magneto-optic element of claim 18 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 32
Dependent Claim
32 words
The switchable magneto-optic element of claim 1 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 33
Dependent Claim
32 words
The switchable magneto-optic element of claim 2 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 34
Dependent Claim
32 words
The switchable magneto-optic element of claim 3 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 35
Dependent Claim
32 words
The switchable magneto-optic element of claim 6 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 36
Dependent Claim
32 words
The switchable magneto-optic element of claim 7 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 37
Dependent Claim
32 words
The switchable magneto-optic element of claim 8 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 38
Dependent Claim
32 words
The switchable magneto-optic element of claim 9 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 39
Dependent Claim
32 words
The switchable magneto-optic element of claim 12 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 40
Dependent Claim
32 words
The switchable magneto-optic element of claim 13 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 41
Dependent Claim
32 words
The switchable magneto-optic element of claim 14 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 42
Dependent Claim
32 words
The switchable magneto-optic element of claim 15 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 43
Dependent Claim
32 words
The switchable magneto-optic element of claim 18 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 44
Dependent Claim
32 words
The switchable magneto-optic element of claim 24 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 45
Dependent Claim
32 words
The switchable magneto-optic element of claim 25 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 46
Dependent Claim
32 words
The switchable magneto-optic element of claim 27 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 47
Dependent Claim
32 words
The switchable magneto-optic element of claim 34 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 48
Dependent Claim
32 words
The switchable magneto-optic element of claim 35 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 49
Dependent Claim
32 words
The switchable magneto-optic element of claim 37 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 50
Dependent Claim
32 words
The switchable magneto-optic element of claim 38 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 51
Dependent Claim
32 words
The switchable magneto-optic element of claim 39 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 52
Dependent Claim
32 words
The switchable magneto-optic element of claim 40 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 53
Dependent Claim
32 words
The switchable magneto-optic element of claim 43 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 54
Dependent Claim
39 words
The switchable magneto-optic element of claim 1 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 55
Dependent Claim
39 words
The switchable magneto-optic element of claim 8 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 56
Dependent Claim
39 words
The switchable magneto-optic element of claim 9 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 57
Dependent Claim
39 words
The switchable magneto-optic element of claim 12 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 58
Dependent Claim
39 words
The switchable magneto-optic element of claim 14 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitacial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 59
Dependent Claim
39 words
The switchable magneto-optic element of claim 15 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 60
Dependent Claim
39 words
The switchable magneto-optic element of claim 18 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 61
Dependent Claim
39 words
The switchable magneto-optic element of claim 19 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 62
Dependent Claim
39 words
The switchable magneto-optic element of claim 20 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 63
Dependent Claim
39 words
The switchable magneto-optic element of claim 21 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 64
Dependent Claim
39 words
The switchable magneto-optic element of claim 22 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 65
Dependent Claim
39 words
The switchable magneto-optic element of claim 23 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 66
Dependent Claim
39 words
The switchable magneto-optic element of claim 24 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 67
Dependent Claim
39 words
The switchable magneto-optic element of claim 25 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 68
Dependent Claim
39 words
The switchable magneto-optic element of claim 27 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 69
Dependent Claim
39 words
The switchable magneto-optic element of claim 28 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 70
Dependent Claim
39 words
The switchable magneto-optic element of claim 29 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 71
Dependent Claim
39 words
The switchable magneto-optic element of claim 30 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 72
Dependent Claim
39 words
The switchable magneto-optic element of claim 33 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 73
Dependent Claim
39 words
The switchable magneto-optic element of claim 34 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 74
Dependent Claim
39 words
The switchable magneto-optic element of claim 35 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 75
Dependent Claim
39 words
The switchable magneto-optic element of claim 37 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 76
Dependent Claim
39 words
The switchable magneto-optic element of claim 38 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 77
Dependent Claim
39 words
The switchable magneto-optic element of claim 39 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 78
Dependent Claim
39 words
The switchable magneto-optic element of claim 40 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 79
Dependent Claim
40 words
The switchable magneto-optic element of claim 43 wherein in the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 80
Dependent Claim
274 words
A magnetically switchable magneto-optic element of high Faraday rotation comprising a monocrystalline gadolinium garnet substrate and an ion implanted epitaxial film supported by said substrate, said epitaxial film being nominally represented by the formula: Bi.sub.x M.sub.3-x-z Q'.sub.z' Fe.sub.5-y-z Ga.sub.y Q.sub.z O.sub.12 wherein, in the epitaxial film prior to ion implantation: M is selected from the group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y, Sm, Gd and combinations thereof; Q is selected from the group consisting of Mn 3+ , In 3+ , Sc 3+ , Sb 3+ , Al 3+ , Ge 4+ , V 5+ and combinations thereof; Q' is a charge-balancing cation having a valence lower than 3+ which is present where Q is comprised of a cation having a valence higher than 3+, Q' being present in an amount such that charge balance is maintained; the values of x, y, z and z' are as follows: < x≦1.9 0≦y≦1.35 0≦z≦1.0 0≦z'≦1.0 y+z≦1.4 the epitaxial film is in compression caused by lattice differential between substrate and epitaxial film, said epitaxial film having a lattice constant greater than said subtrate; the combination of the cations comprising said epitaxial film provides a net negative magneto-strictive coefficient; the anisotropy field of the epitaxial film is a positive value up to about 8,000 gauss; the collapse field of said epitaxial film has a positive value up to about 120 oersteds; and, the Faraday rotation of said epitaxial film is at least about 0.7 degrees per micron at 632 nm; and wherein the epitaxial film subsequent to ion implantation has an anisotropy field of positive value lower than said epitaxial film prior to ion implantation.
Claim 81
Dependent Claim
274 words
A magnetically switchable magneto-optic element of high Faraday rotation comprising a monocrystalline gadolinium garnet substrate and an ion implanted epitaxial film supported by said substrate, said epitaxial film being nominally represented by the formula: Bi.sub.x M.sub.3-x-z Q'.sub.z' Fe.sub.5-y-z Ga.sub.y Q.sub.z O.sub.12 wherein, in the epitaxial film prior to ion implantation: M is selected from the group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y, Sm, Gd and combinations thereof; Q is selected from the group consisting of Mn 3+ , In 3+ , Sc 3+ , Sb 3+ , Al 3+ , Ge 4+ , V 5+ and combinations thereof; Q' is a charge-balancing cation having a valence lower than 3+ which is present where Q is comprised of a cation having a valence higher than 3+, Q' being present in an amount such that charge balance is maintained; the values of x, y, z and z' are as follows: < x≦1.9 0≦y≦1.35 0≦z≦1.0 0≦z'≦1.0 y+z≦1.4 the epitaxial film is in compression caused by lattice differential between substrate and epitaxial film, said epitaxial film having a lattice constant greater than said subtrate; the combination of the cations comprising said epitaxial film provides a net negative magneto-strictive coefficient; the anisotropy field of the epitaxial film is a positive value up to about 8,000 gauss; the collapse field of said epitaxial film has a positive value up to about 120 oersteds; and, the Faraday rotation of said epitaxial film is at least about 0.7 degrees per micron at 632 nm; and wherein the epitaxial film subsequent to ion implantation has an anisotropy field of positive value lower than said epitaxial film prior to ion implantation.
Claim 82
Dependent Claim
28 words
The composite of claim 2 wherein the anisotropy field of the epitaxial film prior to implantation has a value of from about 300 gauss to about 3,500 gauss.
Claim 83
Dependent Claim
50 words
The composite of claim 1 wherein the anisotropy field of the epitaxial film prior to implantation has a value of from about 1500 gauss to about 2000 gauss and wherein the epitaxial film subsequent to ion implantation has an anisotropy field of from about 200 gauss to about 400 gauss.
Claim 84
Dependent Claim
15 words
The switchable magneto-optic element of claim 3 wherein M is Tm, Yb, Y or Lu.
Claim 85
Dependent Claim
11 words
The switchable magneto-optic element of claim 3 wherein M is Tm.
Claim 86
Dependent Claim
24 words
The switchable magneto-optic element of claim 79 wherein the epitaxial film has a collapse field of from about 20 oersteds to about 90 oersteds.
Claim 87
Dependent Claim
24 words
The switchable magneto-optic element of claim 80 wherein the epitaxial film has a collapse field of from about 20 oersteds to about 90 oersteds.
Claim 88
Dependent Claim
24 words
The switchable magneto-optic element of claim 81 wherein the epitaxial film has a collapse field of from about 20 oersteds to about 90 oersteds.
Claim 89
Dependent Claim
24 words
The switchable magneto-optic element of claim 82 wherein the epitaxial film has a collapse field of from about 20 oersteds to about 90 oersteds.
Claim 90
Dependent Claim
24 words
The switchable magneto-optic element of claim 83 wherein the epitaxial film has a collapse field of from about 20 oersteds to about 90 oersteds.
Claim 91
Dependent Claim
24 words
The switchable magneto-optic element of claim 79 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 92
Dependent Claim
24 words
The switchable magneto-optic element of claim 80 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 93
Dependent Claim
24 words
The switchable magneto-optic element of claim 81 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 94
Dependent Claim
24 words
The switchable magneto-optic element of claim 82 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 95
Dependent Claim
24 words
The switchable magneto-optic element of claim 83 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 96
Dependent Claim
32 words
The switchable magneto-optic element of claim 79 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 97
Dependent Claim
32 words
The switchable magneto-optic element of claim 80 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 98
Dependent Claim
32 words
The switchable magneto-optic element of claim 81 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 99
Dependent Claim
32 words
The switchable magneto-optic element of claim 82 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 100
Dependent Claim
32 words
The switchable magneto-optic element of claim 83 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 101
Dependent Claim
32 words
The switchable magneto-optic element of claim 84 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 102
Dependent Claim
32 words
The switchable magneto-optic element of claim 85 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 103
Dependent Claim
32 words
The switchable magneto-optic element of claim 86 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 104
Dependent Claim
32 words
The switchable magneto-optic element of claim 87 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 105
Dependent Claim
32 words
The switchable magneto-optic element of claim 88 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 106
Dependent Claim
32 words
The switchable magneto-optic element of claim 89 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 107
Dependent Claim
32 words
The switchable magneto-optic element of claim 90 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 108
Dependent Claim
32 words
The switchable magneto-optic element of claim 91 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 109
Dependent Claim
32 words
The switchable magneto-optic element of claim 92 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 110
Dependent Claim
32 words
The switchable magneto-optic element of claim 93 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.006A to about 0.06A.
Claim 111
Dependent Claim
39 words
The switchable magneto-optic element of claim 79 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 112
Dependent Claim
39 words
The switchable magneto-optic element of claim 80 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 113
Dependent Claim
39 words
The switchable magneto-optic element of claim 81 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 114
Dependent Claim
39 words
The switchable magneto-optic element of claim 82 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 115
Dependent Claim
39 words
The switchable magneto-optic element of claim 83 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitacial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 116
Dependent Claim
39 words
The switchable magneto-optic element of claim 84 wherein the monocrystalline substrate is a polished plane along the (111) cyrstallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 117
Dependent Claim
39 words
The switchable magneto-optic element of claim 85 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 118
Dependent Claim
39 words
The switchable magneto-optic element of claim 86 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 119
Dependent Claim
39 words
The switchable magneto-optic element of claim 87 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 120
Dependent Claim
39 words
The switchable magneto-optic element of claim 88 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 121
Dependent Claim
39 words
The switchable magneto-optic element of claim 89 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 122
Dependent Claim
39 words
The switchable magneto-optic element of claim 90 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 123
Dependent Claim
40 words
The switchable magneto-optic element of claim 91 wherein in the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 124
Dependent Claim
39 words
The switchable magneto-optic element of claim 92 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 125
Dependent Claim
39 words
The switchable magneto-optic element of claim 93 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 126
Dependent Claim
39 words
The switchable magneto-optic element of claim 94 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 127
Dependent Claim
39 words
The switchable magneto-optic element of claim 95 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 128
Dependent Claim
39 words
The switchable magneto-optic element of claim 96 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 129
Dependent Claim
39 words
The switchable magneto-optic element of claim 97 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 130
Dependent Claim
39 words
The switchable magneto-optic element of claim 98 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 131
Dependent Claim
39 words
The switchable magneto-optic element of claim 99 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 132
Dependent Claim
39 words
The switchable magneto-optic element of claim 100 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 133
Dependent Claim
39 words
The switchable magneto-optic element of claim 101 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 134
Dependent Claim
39 words
The switchable magneto-optic element of claim 102 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 135
Dependent Claim
39 words
The switchable magneto-optic element of claim 103 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 136
Dependent Claim
39 words
The switchable magneto-optic element of claim 104 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 137
Dependent Claim
39 words
The switchable magneto-optic element of claim 105 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 138
Dependent Claim
39 words
The switchable magneto-optic element of claim 106 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 139
Dependent Claim
39 words
The switchable magneto-optic element of claim 107 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 140
Dependent Claim
39 words
The switchable magneto-optic element of claim 108 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 141
Dependent Claim
276 words
A light valve comprised of a polarizer, an analyzer and an optically active composite therebetween, said optically active composite having x-y coincident drive line means associated therewith, characterized in that the optically active composite is a magnetically switchable magneto-optic element of high Faraday rotation comprising a monocrystalline gadolinium garnet substrate and an epitaxial film supported by said substrate, said epitaxial film being nominally represented by the formula: Bi.sub.x M.sub.3-x-z Q'.sub.z' Fe.sub.5-y-z Ga .sub.y Q.sub.z O.sub.12 wherein: M is selected from the group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y, Sm, Gd and combinations thereof; Q is selected from the group consisting of Mn 3+ , In 3+ , Sc 3+ , Sb 3+ , Al 3+ , Ge 4+ , V 5+ and combinations thereof; Q' is a charge-balancing cation having a valence lower than 3+ which is present where Q is comprised of a cation having a valence higher than 3+, Q' being present in an amount such that charge balance is maintained; the values of x, y, z and z' are as follows: < x≦1.9 0≦y≦1.35 0≦z≦1.0 0≦z'≦1.0 y+z≦1.4 the epitaxial film is in compression caused by lattice differential between substrate and epitaxial film, said epitaxial film having a lattice constant greater than said substrate; the combination of the cations comprising said epitaxial film provides a net negative magneto-strictive coefficient; the anisotropy field of the epitaxial film is a positive value up to about 8,000 gauss; the collapse field of said epitaxial film : has a positive value up to about 120 oersteds; and, the Faraday rotation of said epitaxial film is at least about 0.7 degrees per micron at 632 nm.
Claim 142
Dependent Claim
276 words
A light valve comprised of a polarizer, an analyzer and an optically active composite therebetween, said optically active composite having x-y coincident drive line means associated therewith, characterized in that the optically active composite is a magnetically switchable magneto-optic element of high Faraday rotation comprising a monocrystalline gadolinium garnet substrate and an epitaxial film supported by said substrate, said epitaxial film being nominally represented by the formula: Bi.sub.x M.sub.3-x-z Q'.sub.z' Fe.sub.5-y-z Ga .sub.y Q.sub.z O.sub.12 wherein: M is selected from the group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y, Sm, Gd and combinations thereof; Q is selected from the group consisting of Mn 3+ , In 3+ , Sc 3+ , Sb 3+ , Al 3+ , Ge 4+ , V 5+ and combinations thereof; Q' is a charge-balancing cation having a valence lower than 3+ which is present where Q is comprised of a cation having a valence higher than 3+, Q' being present in an amount such that charge balance is maintained; the values of x, y, z and z' are as follows: < x≦1.9 0≦y≦1.35 0≦z≦1.0 0≦z'≦1.0 y+z≦1.4 the epitaxial film is in compression caused by lattice differential between substrate and epitaxial film, said epitaxial film having a lattice constant greater than said substrate; the combination of the cations comprising said epitaxial film provides a net negative magneto-strictive coefficient; the anisotropy field of the epitaxial film is a positive value up to about 8,000 gauss; the collapse field of said epitaxial film : has a positive value up to about 120 oersteds; and, the Faraday rotation of said epitaxial film is at least about 0.7 degrees per micron at 632 nm.
Claim 143
Dependent Claim
47 words
The light valve of claim 139 further characterized in that the epitaxial film is ion implanted, has an antsotropy field of from about 300 gauss to about 3,500 gauss prior to implantation and an antsotropy field of about 100 gauss to about 500 gauss after ion implantation.
Claim 144
Dependent Claim
14 words
The light valve of claim 139 wherein M is Tm, Yb, Y or Lu.
Claim 145
Dependent Claim
14 words
The light valve of claim 140 wherein M is Tm., Yb, Y or Lu.
Claim 146
Dependent Claim
10 words
The light valve of claim 141 wherein M is Tm.
Claim 147
Dependent Claim
10 words
The light valve of claim 142 wherein M is Tm.
Claim 148
Dependent Claim
32 words
The light valve of claim 141 wherein the epitaxial film has three sublattice magnetizations which form a compensation point outside the temperature range of from about 243° K. to about 373° K.
Claim 149
Dependent Claim
32 words
The light valve of claim 142 wherein the epitaxial film has three sublattice magnetizations which form a compensation point outside the temperature range of from about 243° K. to about 373° K.
Claim 150
Dependent Claim
60 words
The light valve of claim 139 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 151
Dependent Claim
47 words
The light valve of claim 140 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 152
Dependent Claim
60 words
The light valve of claim 141 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 153
Dependent Claim
47 words
The light valve of claim 142 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 154
Dependent Claim
60 words
The light valve of claim 143 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 155
Dependent Claim
47 words
The light valve of claim 144 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from ab.out 0.017 A to about 0.06 A, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 156
Dependent Claim
60 words
The light valve of claim 145 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 157
Dependent Claim
47 words
The light valve of claim 146 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 158
Dependent Claim
23 words
The light valve of claim 147 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 159
Dependent Claim
23 words
The light valve of claim 148 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 160
Dependent Claim
23 words
The light valve of claim 149 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 161
Dependent Claim
23 words
The light valve of claim 150 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 162
Dependent Claim
23 words
The light valve of claim 151 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 163
Dependent Claim
23 words
The light valve of claim 152 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 164
Dependent Claim
23 words
The light valve of claim 153 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 165
Dependent Claim
23 words
The light valve of claim 154 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 166
Dependent Claim
38 words
The light valve of claim 147 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 167
Dependent Claim
38 words
The light valve of claim 148 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 168
Dependent Claim
38 words
The light valve of claim 149 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 169
Dependent Claim
38 words
The light valve of claim 150 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 170
Dependent Claim
38 words
The light valve of claim 151 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 171
Dependent Claim
38 words
The light valve of claim 152 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 172
Dependent Claim
38 words
The light valve of claim 153 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 173
Dependent Claim
38 words
The light valve of claim 154 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 174
Dependent Claim
38 words
The light valve of claim 155 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 175
Dependent Claim
38 words
The light valve of claim 156 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 176
Dependent Claim
38 words
The light valve of claim 157 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 177
Dependent Claim
38 words
The light valve of claim 158 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 178
Dependent Claim
38 words
The light valve of claim 159 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 179
Dependent Claim
38 words
The light valve of claim 160 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 180
Dependent Claim
38 words
The light valve of claim 161 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 181
Dependent Claim
38 words
The light valve of claim 162 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 182
Dependent Claim
284 words
In an optical printer for recording printed information on a radiation-sensitive recording medium, said printer comprised of a source of radiation, means for imposing an image on said radiation and means for receiving and recording said image on a radiation-sensitive recording medium, the improvement which comprises utilizing an image-forming means comprising an array of independently switchable optically activ pixels epitaxially formed on monocrystalline gadolinium garnet substrate, said pixels comprising an epitaxial film nominally represented by the formula: Bi.sub.x M.sub.3-x-z Q'.sub.z', Fe.sub.5-y-z Ga.sub.y Q.sub.z O.sub.12 wherein: M is selected from the group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y, Sm, Gd and combinations thereof; Q is selected from the group consisting of Mn 3+ , In 3+ , Sc 3+ , Sb 3+ , Al 3+ , Ge 4+ , V 5+ and combinations thereof; Q' is a charge-balancing cation having a valence lower than 3+ which is present where Q is comprised of a cation having a valence higher than 3+, Q' being present in an amount such that charge balance is maintained; the values of x, y, z and z' are as follows: 0<x≦1.9 0≦y≦1.35 0≦z≦1.0 ≦ z'≦1.0 y+z≦1.4 the epitaxial film is in compression caused by lattice differential between substrate and epitaxial film, said epitaxial film having a lattice constant greater than said substrate; the combination of the cations comprising said epitaxial film provides a net negative magneto-strictive coefficient; the anisotropy field of the epitaxial film is a positive value up to about 8,000 gauss; the collapse field of said epitaxial film has a positive value up to about 120 oersteds; and, the Faraday rotation of said epitaxial film is at least about 0.7 degrees per micron at 632 nm.
Claim 183
Dependent Claim
284 words
In an optical printer for recording printed information on a radiation-sensitive recording medium, said printer comprised of a source of radiation, means for imposing an image on said radiation and means for receiving and recording said image on a radiation-sensitive recording medium, the improvement which comprises utilizing an image-forming means comprising an array of independently switchable optically activ pixels epitaxially formed on monocrystalline gadolinium garnet substrate, said pixels comprising an epitaxial film nominally represented by the formula: Bi.sub.x M.sub.3-x-z Q'.sub.z', Fe.sub.5-y-z Ga.sub.y Q.sub.z O.sub.12 wherein: M is selected from the group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y, Sm, Gd and combinations thereof; Q is selected from the group consisting of Mn 3+ , In 3+ , Sc 3+ , Sb 3+ , Al 3+ , Ge 4+ , V 5+ and combinations thereof; Q' is a charge-balancing cation having a valence lower than 3+ which is present where Q is comprised of a cation having a valence higher than 3+, Q' being present in an amount such that charge balance is maintained; the values of x, y, z and z' are as follows: 0<x≦1.9 0≦y≦1.35 0≦z≦1.0 ≦ z'≦1.0 y+z≦1.4 the epitaxial film is in compression caused by lattice differential between substrate and epitaxial film, said epitaxial film having a lattice constant greater than said substrate; the combination of the cations comprising said epitaxial film provides a net negative magneto-strictive coefficient; the anisotropy field of the epitaxial film is a positive value up to about 8,000 gauss; the collapse field of said epitaxial film has a positive value up to about 120 oersteds; and, the Faraday rotation of said epitaxial film is at least about 0.7 degrees per micron at 632 nm.
Claim 184
Dependent Claim
47 words
The optical printer of claim 179 further characterized in that the epitaxial film is ion implanted, has an antsotropy field of from about 300 gauss to about 3,500 gauss prior to implantation and an antsotropy field of about 100 gauss to about 500 gauss after ion implantation.
Claim 185
Dependent Claim
14 words
The optical printer of claim 179 wherein M is Tm, Yb, Y or Lu.
Claim 186
Dependent Claim
14 words
The optical printer of claim 180 wherein M is Tm, Yb, Y or Lu.
Claim 187
Dependent Claim
10 words
The optical printer of claim 181 wherein M is Tm.
Claim 188
Dependent Claim
10 words
The optical printer of claim 182 wherein M is Tm.
Claim 189
Dependent Claim
32 words
The optical printer of claim 181 wherein the epitaxial film has three sublattic magnetizations which form a compensation point outside the temperature range of from about 243° K. to about 373° K.
Claim 190
Dependent Claim
32 words
The optical printer of claim 182 wherein the epitaxial film has three sublattic magnetizations which form a compensation point outside the temperature range of from about 243° K. to about 373° K.
Claim 191
Dependent Claim
60 words
The optical printer of claim 179 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 192
Dependent Claim
47 words
The optical printer of claim 180 wherein the epitaxial film compression is achieved by lattic differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 193
Dependent Claim
60 words
The optical printer of claim 181 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 194
Dependent Claim
47 words
The optical printer of claim 182 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 195
Dependent Claim
60 words
The optical printer of claim 183 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 196
Dependent Claim
47 words
The optical printer of claim 184 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 197
Dependent Claim
60 words
The optical printer of claim 185 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 198
Dependent Claim
47 words
The optical printer of claim 186 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 199
Dependent Claim
23 words
The optical printer of claim 187 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 200
Dependent Claim
23 words
The optical printer of claim 188 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 201
Dependent Claim
23 words
The optical printer of claim 189 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 202
Dependent Claim
23 words
The optical printer of claim 190 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 203
Dependent Claim
22 words
Ihe optical printer of claim 191 the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 204
Dependent Claim
23 words
The optical printer of claim 192 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 205
Dependent Claim
23 words
The optical printer of claim 193 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 206
Dependent Claim
23 words
The optical printer of claim 194 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 207
Dependent Claim
38 words
The optical printer of claim 187 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 208
Dependent Claim
38 words
The optical printer of claim 188 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 209
Dependent Claim
38 words
The optical printer of claim 189 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 210
Dependent Claim
38 words
The optical printer of claim 190 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 211
Dependent Claim
38 words
The optical printer of claim 191 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 212
Dependent Claim
38 words
The optical printer of claim 192 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 213
Dependent Claim
38 words
The optical printer of claim 193 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 214
Dependent Claim
38 words
The optical printer of claim 194 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 215
Dependent Claim
38 words
The optical printer of claim 195 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 216
Dependent Claim
38 words
The optical printer of claim 196 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 217
Dependent Claim
38 words
The optical printer of claim 197 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 218
Dependent Claim
38 words
The optical printer of claim 198 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 219
Dependent Claim
38 words
The optical printer of claim 199 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 220
Dependent Claim
38 words
The optical printer of claim 200 wherein the moncrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 221
Dependent Claim
39 words
The optical printer of claim 201 wherein the monocrystalline line substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 222
Dependent Claim
38 words
The optical printer of claim 202 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 223
Dependent Claim
284 words
A microwave signal processing unit comprising a microwave source, an acousto-optic Bragg cell for receiving microwaves propagated by said microwave source, a laser light source for passing laser light through said acousto-optic Bragg cell, a receiver situated to receive said laser light and an array of independently switchable optically active pixels formed on monocrystalline gadolinium garnet substrate interposed between said acousto-optic Bragg cell and said receiver, said pixels comprising an epitaxial film nominally represented by the formula: Bi.sub.x M.sub.3-x-z Q'.sub.z' Fe.sub.5-y-z- Ga.sub.y Q.sub.z O.sub.12 wherein: M is selected from the group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y, Sm, Gd and combinations thereof; Q is selected from the group consisting of Mn 3+ , In 3+ , Sc 3+ , Sb 3+ , Al 3+ , Ge 4+ , V 5+ and combinations thereof; Q' is a charge-balancing cation having a valence lower than 3+ which is present where Q is comprised of a cation having a valence higher than 3+, Q' being present in an amount such that charge balance is maintained; the values of x, y, z and z' are as follows: 0<x≦1.9 0≦y≦1.35 0≦z≦1.0 ≦ z'≦1.0 y+z≦1.4 the epitaxial film is in compression caused by lattice differential between substrate and epitaxial film, said epitaxial film having a lattice constant greater than said substrate; the combination of the cations comprising said epitaxial film provides a net negative magneto-strictive coefficient; the anisotropy field of the epitaxial film is a positive value up to about 8,000 gauss; the collapse field of said epitaxial film has a positive value up to about 120 oersteds; and, the Faraday rotation of said epitaxial film is at least about 0.7 degrees per micron at 632 nm.
Claim 224
Dependent Claim
284 words
A microwave signal processing unit comprising a microwave source, an acousto-optic Bragg cell for receiving microwaves propagated by said microwave source, a laser light source for passing laser light through said acousto-optic Bragg cell, a receiver situated to receive said laser light and an array of independently switchable optically active pixels formed on monocrystalline gadolinium garnet substrate interposed between said acousto-optic Bragg cell and said receiver, said pixels comprising an epitaxial film nominally represented by the formula: Bi.sub.x M.sub.3-x-z Q'.sub.z' Fe.sub.5-y-z- Ga.sub.y Q.sub.z O.sub.12 wherein: M is selected from the group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y, Sm, Gd and combinations thereof; Q is selected from the group consisting of Mn 3+ , In 3+ , Sc 3+ , Sb 3+ , Al 3+ , Ge 4+ , V 5+ and combinations thereof; Q' is a charge-balancing cation having a valence lower than 3+ which is present where Q is comprised of a cation having a valence higher than 3+, Q' being present in an amount such that charge balance is maintained; the values of x, y, z and z' are as follows: 0<x≦1.9 0≦y≦1.35 0≦z≦1.0 ≦ z'≦1.0 y+z≦1.4 the epitaxial film is in compression caused by lattice differential between substrate and epitaxial film, said epitaxial film having a lattice constant greater than said substrate; the combination of the cations comprising said epitaxial film provides a net negative magneto-strictive coefficient; the anisotropy field of the epitaxial film is a positive value up to about 8,000 gauss; the collapse field of said epitaxial film has a positive value up to about 120 oersteds; and, the Faraday rotation of said epitaxial film is at least about 0.7 degrees per micron at 632 nm.
Claim 225
Dependent Claim
49 words
The microwave signal processing unit of claim 219 further characterized in that the epitaxial film is ion implanted, has an antsotropy field of from about 200 gauss to about 3,500 gauss prior to implantation and an antsotropy field of about 100 gauss to about 500 gauss after ion implantation.
Claim 226
Dependent Claim
16 words
The microwave signal processing unit of claim 219 wherein M is Tm, Yb, Y or Lu.
Claim 227
Dependent Claim
16 words
The microwave signal processing unit of claim 220 wherein M is Tm, Yb, Y or Lu.
Claim 228
Dependent Claim
12 words
The microwave signal processing unit of claim 221 wherein M is Tm.
Claim 229
Dependent Claim
12 words
The microwave signal processing unit of claim 222 wherein M is Tm.
Claim 230
Dependent Claim
34 words
The microwave signal processing unit of claim 221 wherein the epitaxial film has three sublattice magnetizations which form a compensation point outside the temperature range of from about 243° K. to about 373° K.
Claim 231
Dependent Claim
34 words
The microwave signal processing unit of claim 222 wherein the epitaxial film has three sublattice magnetizations which form a compensation point outside the temperature range of from about 243° K. to about 373° K.
Claim 232
Dependent Claim
54 words
The microwave signal processing unit of claim 219 wherein the epitaxial film compression is achieved by lattice differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 233
Dependent Claim
49 words
The microwave signal processing unit of claim 220 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 234
Dependent Claim
62 words
The microwave signal processing unit of claim 221 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is fraom about 20 oersteds to about 90 oersteds.
Claim 235
Dependent Claim
49 words
The microwave signal processing unit of claim 222 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 236
Dependent Claim
62 words
The microwave signal processing unit of claim 223 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 237
Dependent Claim
41 words
The microwave signal processing unit of claim 224 wherein the epitaxial film compression is achieved by lattice idfferential being from about 0.017 A to about 0.06 A, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 238
Dependent Claim
62 words
The microwave signal processing unit of claim 225 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being fraom about 0.017 A to about 0.06 A, wherein, the anistropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 239
Dependent Claim
49 words
The microwave signal processing unit of claim 226 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 240
Dependent Claim
25 words
The microwave signal processing unit of claim 227 wherein the peitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 241
Dependent Claim
25 words
The microwave signal processing unit of claim 228 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 242
Dependent Claim
25 words
The microwave signal processing unit of claim 229 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 243
Dependent Claim
25 words
The microwave signal processing unit of claim 230 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 244
Dependent Claim
25 words
The microwave signal processing unit of claim 231 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 245
Dependent Claim
25 words
The microwave signal processing unit of claim 232 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 246
Dependent Claim
25 words
The microwave signal processing unit of claim 233 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 247
Dependent Claim
25 words
The microwave signal processing unit of claim 234 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 248
Dependent Claim
40 words
The microwave signal processing unit of claim 227 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 249
Dependent Claim
40 words
The microwave signal processing unit of claim 228 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by siad substrate is fraom about 2 μm to about 20 μm in thickness.
Claim 250
Dependent Claim
40 words
The microwave signal processing unit of claim 229 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is fraom about 2 μm to about 20 μm in thickness.
Claim 251
Dependent Claim
40 words
The microwave signal processing unit of claim 230 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by siad substrate is fraom about 2 μm to about 20 μm in thickness.
Claim 252
Dependent Claim
40 words
The microwave signal processing unit of claim 231 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 253
Dependent Claim
40 words
The microwave signal processing unit of claim 232 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 254
Dependent Claim
40 words
The microwave signal processing unit of claim 233 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 255
Dependent Claim
40 words
The microwave signal processing unit of claim 234 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 256
Dependent Claim
40 words
The microwave signal processing unit of claim 235 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 257
Dependent Claim
40 words
The microwave signal processing unit of claim 236 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 258
Dependent Claim
40 words
The microwave signal processing unit of claim 237 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 259
Dependent Claim
40 words
The microwave signal processing unit of claim 238 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film support by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 260
Dependent Claim
40 words
The microwave signal processing unit of claim 239 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 261
Dependent Claim
40 words
The microwave signal processing unit of claim 240 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 262
Dependent Claim
40 words
The microwave signal processing unit of claim 241 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 263
Dependent Claim
40 words
The microwave signal processing unit of claim 242 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 264
Dependent Claim
242 words
A magneto-optic light deflector comprising a monocrystalline gadolinium garnet substrate upon which are supported parallel aligned switchable periodic stripe domains formed by a plurality of parallel strips of an epitaxial film nominally represented by the formula: Bi.sub.x M.sub.3-x-z Q'.sub.z' Fe.sub.5-y-a- Ga.sub.y Q.sub.z O.sub.12 wherein: M is selected from the group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y, Sm, Gd and combinations thereof; Q is selected from the group consisting of Mn 3+ , In 3+ , Sc 3+ , Sb 3+ , Al 3+ , Ge 4+ , V 5+ and combinations thereof; Q' is a charge-balancing cation having a valence lower than 3+ which is present where Q is comprised of a cation having a valence higher than 3+, Q' being present in an amount such that charge balance is maintained; the values of x, y, z and z' are as follows: 0<x≦1.9 0≦y≦1.35 0≦z≦1.0 0≦z'≦1.0 y+z≦1.4 the epitaxial film is in compression caused by lattice differential between substrate and epitaxial film, said epitaxial film having a lattice constant greater than said substrate; the combination of the cations comprising said epitaxial film provides a net negative magneto-strictive coefficient; the anisotropy field of the epitaxial film is a positive value up to about 8,000 gauss; the collapse field of said epitaxial film has a positive value up to about 120 oersteds; and, the Faraday rotation of said epitaxial film is at least about 0.7 degrees per micron at 632 nm.
Claim 265
Dependent Claim
242 words
A magneto-optic light deflector comprising a monocrystalline gadolinium garnet substrate upon which are supported parallel aligned switchable periodic stripe domains formed by a plurality of parallel strips of an epitaxial film nominally represented by the formula: Bi.sub.x M.sub.3-x-z Q'.sub.z' Fe.sub.5-y-a- Ga.sub.y Q.sub.z O.sub.12 wherein: M is selected from the group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y, Sm, Gd and combinations thereof; Q is selected from the group consisting of Mn 3+ , In 3+ , Sc 3+ , Sb 3+ , Al 3+ , Ge 4+ , V 5+ and combinations thereof; Q' is a charge-balancing cation having a valence lower than 3+ which is present where Q is comprised of a cation having a valence higher than 3+, Q' being present in an amount such that charge balance is maintained; the values of x, y, z and z' are as follows: 0<x≦1.9 0≦y≦1.35 0≦z≦1.0 0≦z'≦1.0 y+z≦1.4 the epitaxial film is in compression caused by lattice differential between substrate and epitaxial film, said epitaxial film having a lattice constant greater than said substrate; the combination of the cations comprising said epitaxial film provides a net negative magneto-strictive coefficient; the anisotropy field of the epitaxial film is a positive value up to about 8,000 gauss; the collapse field of said epitaxial film has a positive value up to about 120 oersteds; and, the Faraday rotation of said epitaxial film is at least about 0.7 degrees per micron at 632 nm.
Claim 266
Dependent Claim
48 words
The magneto-optic light deflector of claim 259 further characterized in that the epitaxial film is ion implanted, has an antsotropy field of from about 300 gauss to about 3,500 gauss prior to implantation and an antsotropy field of about 100 gauss to about 500 gauss after ion implantation.
Claim 267
Dependent Claim
15 words
The magneto-optic light deflector of claim 259 wherein M is TM, Yb, Y or Lu.
Claim 268
Dependent Claim
14 words
The magneto-optic light deflector of claim 261 wherein M is TM, Y or Lu.
Claim 269
Dependent Claim
11 words
The magneto-optic light deflector of claim 261 wherein M is Tm.
Claim 270
Dependent Claim
11 words
The magneto-optic light deflector of claim 262 wherein M is Tm.
Claim 271
Dependent Claim
33 words
The magneto-optic light deflector of claim 261 wherein the epitaxial film has three sublattice magnetizations which form a compensation point outside the temperature range of from about 243° K. to about 373° K.
Claim 272
Dependent Claim
33 words
The magneto-optic light deflector of claim 262 wherein the epitaxial film has three sublattice magnetizations which form a compensation point outside the temperature range of from about 243° K. to about 373° K.
Claim 273
Dependent Claim
62 words
The magneto-optic light deflector of claim 259 wherein the epitaxial film compression is achieved by lattice differential between the substrate and the epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 274
Dependent Claim
48 words
The magneto-optic light deflector of claim 260 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 275
Dependent Claim
61 words
The magneto-optic light deflector of claim 261 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 276
Dependent Claim
48 words
The magneto-optic light deflector of claim 262 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 277
Dependent Claim
61 words
The magneto-optic light deflector of claim 263 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 278
Dependent Claim
48 words
The magneto-optic light deflector of claim 264 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 279
Dependent Claim
61 words
The magneto-optic light deflector of claim 265 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, wherein the anisotropy field is from about 300 gauss to about 3,500 gauss, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 280
Dependent Claim
48 words
The magneto-optic light deflector of claim 266 wherein the epitaxial film compression is achieved by lattice differential between the substrate and epitaxial film, said differential being from about 0.017 A to about 0.06 A, and wherein the collapse field is from about 20 oersteds to about 90 oersteds.
Claim 281
Dependent Claim
24 words
The magneto-optic light deflector of claim 267 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 282
Dependent Claim
24 words
The magneto-optic light deflector of claim 268 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 283
Dependent Claim
24 words
The magneto-optic light deflector of claim 269 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 284
Dependent Claim
24 words
The magneto-optic light deflector of claim 270 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 285
Dependent Claim
24 words
The magneto-optic light deflector of claim 271 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 286
Dependent Claim
24 words
The magneto-optic light deflector of claim 272 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 287
Dependent Claim
24 words
The magneto-optic light deflector of claim 273 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 288
Dependent Claim
24 words
The magneto-optic light deflector of claim 274 wherein the epitaxial film has a collapse field of from about 60 oersteds to about 80 oersteds.
Claim 289
Dependent Claim
39 words
The magneto-optic light deflector of claim 267 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 290
Dependent Claim
39 words
The magneto-optic light deflector of claim 268 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substratc is from about 2 μm to about 20 μm in thickness.
Claim 291
Dependent Claim
39 words
The magneto-optic light deflector of claim 269 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 292
Dependent Claim
39 words
The magneto-optic light deflector of claim 270 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 293
Dependent Claim
39 words
The nagneto-optic light deflector of claim 271 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 294
Dependent Claim
39 words
The magneto-optic light deflector of claim 272 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 295
Dependent Claim
39 words
The magneto-optic light deflector of claim 273 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 296
Dependent Claim
39 words
The magneto-optic light deflector of claim 274 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 297
Dependent Claim
39 words
The magneto-optic light deflector of claim 275 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 298
Dependent Claim
39 words
The magneto-optic light deflector of claim 276 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 299
Dependent Claim
39 words
The magneto-optic light deflector of claim 277 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is ffom about 2 μm to about 20 μm in thickness.
Claim 300
Dependent Claim
39 words
The magneto-optic light deflector of claim 278 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 301
Dependent Claim
39 words
The magneto-optic light deflecbor of claim 279 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 302
Dependent Claim
39 words
The magneto-optic light deflector of claim 280 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 303
Dependent Claim
39 words
The magneto-optic light deflector of claim 281 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
Claim 304
Dependent Claim
39 words
The magneto-optic light deflector of claim 282 wherein the monocrystalline substrate is a polished plane along the (111) crystallographic plane and the epitaxial film supported by said substrate is from about 2 μm to about 20 μm in thickness.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-30 | 1989-04-01 | 1989-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-30 | 1993-04-01 | 1993-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-30 | 1997-04-01 | 1997-10-01 | $7700.00 | Window Closed / Lapsed |