US4333991A
Expired / Lapsed
US
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Magnetic garnet film and manufacturing method therefor
Assignee: Olympus Corp
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Filing: 1981-04-27
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Granted: 1982-06-08
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Expires: 2001-04-27
Abstract
Abstract Disclosed is a magnetic garnet film which has a composition (BiGdLu) 3 (FeAl) 5 O 12 or (BiGdSm) 3 (FeAl) 5 O 12 .
Inventors
- 👤 Yoshifumi Sakurai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:25
CPC Classifications
H; H01; H01F; H01F10/00; H01F10/08; H01F10/10; H01F10/18; H01F10/20; H01F10/24; H01F10/245; C; C30; C30B; C30B19/00; C30B19/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/28
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
27 words
A magnetic garnet film having a composition selected from the group consisting of (BiGdLu) 3 (FeAl) 5 O 12 and (BiGdSm) 3 (FeAl) 5 O 12 .
Claim 2
Dependent Claim
27 words
A magnetic garnet film having a composition selected from the group consisting of (BiGdLu) 3 (FeAl) 5 O 12 and (BiGdSm) 3 (FeAl) 5 O 12 .
Claim 3
Dependent Claim
53 words
A magnetic garnet film according to claim 1, wherein said garnet film is composed of a single crystal grown on a substrate having a composition selected from the group consisting of Gd 3 Ga 5 O 12 , Sm 3 Ga 5 O 12 , and Nd 3 Ga 5 O 12 .
Claim 4
Dependent Claim
20 words
A magnetic garnet film according to claim 1 or 2, wherein said garnet film is layered on a photoelectric film.
Claim 5
Dependent Claim
70 words
A process for growing a magnetic garnet film comprising growing a single crystal garnet having a composition selected from the group consisting of (BiGdLu) 3 (FeAl) 5 O 12 and (BiGdSm) 3 (FeAl) 5 O 12 on a substrate having a composition selected from the group consisting of Gd 3 Ga 5 O 12 , Sm 3 Ga 5 O 12 , and Nd 3 Ga 5 O 12 .
Claim 6
Dependent Claim
70 words
A process for growing a magnetic garnet film comprising growing a single crystal garnet having a composition selected from the group consisting of (BiGdLu) 3 (FeAl) 5 O 12 and (BiGdSm) 3 (FeAl) 5 O 12 on a substrate having a composition selected from the group consisting of Gd 3 Ga 5 O 12 , Sm 3 Ga 5 O 12 , and Nd 3 Ga 5 O 12 .
Claim 7
Dependent Claim
19 words
A process according to claim 4, wherein said single crystal is grown by the liquid crystal epitaxy growth method.
Claim 8
Dependent Claim
23 words
A process according to claim 5, wherein said substrate is rotated while growing said single crystal for controlling the maximum coercive force temperature.
Claim 9
Dependent Claim
16 words
A garnet film manufactured by a process according to any one of claims 4 to 6.
Claim 10
Dependent Claim
77 words
A magnetic garnet film having a composition selected from the group consisting of (BiGdLu) 3 (FeAl) 5 O 12 and (BiGdSm) 3 (FeAl) 5 O 12 , said garnet film being composed of a single crystal grown on a substrate having a composition selected from the group consisting of Gd 3 Ga 5 O 12 , Sm 3 Ga 5 O 12 and Nd 3 Ga 5 O 12 , and being multilayered with a photoelectric film.
Claim 11
Dependent Claim
77 words
A magnetic garnet film having a composition selected from the group consisting of (BiGdLu) 3 (FeAl) 5 O 12 and (BiGdSm) 3 (FeAl) 5 O 12 , said garnet film being composed of a single crystal grown on a substrate having a composition selected from the group consisting of Gd 3 Ga 5 O 12 , Sm 3 Ga 5 O 12 and Nd 3 Ga 5 O 12 , and being multilayered with a photoelectric film.
Claim 12
Dependent Claim
93 words
A process for growing a magnetic garnet film comprising growing by the liquid crystal epitaxy growth method a single crystal garnet having a composition selected from the group consisting of (BiGdLu) 3 (FeAl) 5 O 12 and (BiGdSm) 3 (FeAl) 5 O 12 on a substrate having a composition selected from the group consisting of Gd 3 Ga 5 O 12 , Sm 3 Ga 5 O 12 , and Nd 3 Ga 5 O 12 , said substrate being rotated while growing said single crystal for controlling the maximum coercive force temperature.
Claim 13
Dependent Claim
93 words
A process for growing a magnetic garnet film comprising growing by the liquid crystal epitaxy growth method a single crystal garnet having a composition selected from the group consisting of (BiGdLu) 3 (FeAl) 5 O 12 and (BiGdSm) 3 (FeAl) 5 O 12 on a substrate having a composition selected from the group consisting of Gd 3 Ga 5 O 12 , Sm 3 Ga 5 O 12 , and Nd 3 Ga 5 O 12 , said substrate being rotated while growing said single crystal for controlling the maximum coercive force temperature.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-06-07 | 1985-12-07 | 1986-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-06-07 | 1989-12-07 | 1990-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-06-07 | 1993-12-07 | 1994-06-08 | $7700.00 | Window Closed / Lapsed |