US4540451A
Expired / Lapsed
US
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Method for manufacturing a luminescent diode having a high frequency and high limit frequency for its modulation capability
Assignee: Siemens AG
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Filing: 1982-06-22
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Granted: 1985-09-10
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Expires: 2002-06-22
Abstract
Abstract A luminescent diode is comprised of n- and p-conductive layer components in which a graded bandgap is present and between which a pn-junction is present. The p-conductive layer component is produced by means of an additional zinc additive during an epitaxy processing utilized for manufacturing the device. The luminescent diode of the invention has improved efficiency and a higher modulation capability cutoff frequency.
Inventors
- 👤 Siegfried Leibenzeder
- 👤 Claus Weyrich
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:17
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
186 words
A method for the manufacture of a luminescent diode with a predetermined emission wavelength maximum, comprising the steps of: determining a desired emission wavelength maximum; providing a substrate member with a deposition face; providing a melt to be deposited and which comprises the elements Ga 1-x Al x As, and which also contains an n-conductivity doping component selected from the group consisting of sulfur, selenium, and tellurium; depositing said melt onto said deposition face in a continuous single step liquid phase epitaxial procedure so as to continuously grow a single layer in a direction normal to the deposition face of said substrate so as to form an epitaxial material crystal body on the substrate member, said epitaxial deposition resulting in a substantially continuously decreasing value x of the aluminum concentration in said body in said normal direction, a thickness d of said body being 150 to 200 μm measured in said normal direction, said resulting continuously decreasing value x resulting in a continuously decreasing range of band gap values, a specific band gap value within said range corresponding to said predetermined desired emission wave length maximum;
Claim 2
Independent Claim
186 words
A method for the manufacture of a luminescent diode with a predetermined emission wavelength maximum, comprising the steps of: determining a desired emission wavelength maximum; providing a substrate member with a deposition face; providing a melt to be deposited and which comprises the elements Ga 1-x Al x As, and which also contains an n-conductivity doping component selected from the group consisting of sulfur, selenium, and tellurium; depositing said melt onto said deposition face in a continuous single step liquid phase epitaxial procedure so as to continuously grow a single layer in a direction normal to the deposition face of said substrate so as to form an epitaxial material crystal body on the substrate member, said epitaxial deposition resulting in a substantially continuously decreasing value x of the aluminum concentration in said body in said normal direction, a thickness d of said body being 150 to 200 μm measured in said normal direction, said resulting continuously decreasing value x resulting in a continuously decreasing range of band gap values, a specific band gap value within said range corresponding to said predetermined desired emission wave length maximum;
Claim 3
Dependent Claim
79 words
during said single step deposition, adding zinc as a p-conductivity doping component to the melt sufficient to over-compensate said n-conductivity doping component, and starting said adding at a time when said corresponding specific band gap value is attained and continuing until completion of the epitaxial deposition, said zinc-doping producing a p-doped portion of said epitaxially grown body; removing said substrate member after completion of the epitaxial growth of the body; and providing electrodes on opposite faces of said body.
Claim 4
Dependent Claim
79 words
during said single step deposition, adding zinc as a p-conductivity doping component to the melt sufficient to over-compensate said n-conductivity doping component, and starting said adding at a time when said corresponding specific band gap value is attained and continuing until completion of the epitaxial deposition, said zinc-doping producing a p-doped portion of said epitaxially grown body; removing said substrate member after completion of the epitaxial growth of the body; and providing electrodes on opposite faces of said body.
Claim 5
Dependent Claim
20 words
A method according to claim 1 including the step of adding the zinc in a gas phase during the epitaxy.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-09 | 1989-03-11 | 1989-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-09 | 1993-03-11 | 1993-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-09 | 1997-03-11 | 1997-09-10 | $7700.00 | Window Closed / Lapsed |