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Patent US4539431A successfully refreshed from Google Patents.
US4539431A
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Pulse anneal method for solar cell
Assignee: Sera Solar Corp
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Filing: 1983-06-06
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Granted: 1985-09-03
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Expires: 2003-06-06
Abstract
Abstract A solar cell including a pulse annealed layer of crystalline, amorphous or polycrystalline semiconductor material of one conductivity type and either a layer of opposite conductivity type or a liquid electrolyte forming a collector junction therewith. A method of improving the characteristics of a solar cell including at least one layer of crystalline, amorphous or polycrystalline semiconductor material which includes the step of pulse annealing said semiconductor material.
Inventors
- 👤 Garret R. Moddel
- 👤 James F. Gibbons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:10
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H01; H01G; H01G9/00; H01G9/20; H10F10/00; H10F10/10; H10F10/17; H10F71/103; H10F71/128; H10F71/134; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
74 words
The method of making a solar cell which comprises the steps of depositing on a substrate a first layer of n-type amorphous silicon, followed by a second layer of amorphous silicon containing carbon atoms, followed by a third layer p-type amorphous silicon, and annealing the entire structure by rapidly heating with radiant thermal energy for a short period of time, said carbon atoms minimizing crystallization of said second layer and maintaining high light absorption.
Claim 2
Independent Claim
74 words
The method of making a solar cell which comprises the steps of depositing on a substrate a first layer of n-type amorphous silicon, followed by a second layer of amorphous silicon containing carbon atoms, followed by a third layer p-type amorphous silicon, and annealing the entire structure by rapidly heating with radiant thermal energy for a short period of time, said carbon atoms minimizing crystallization of said second layer and maintaining high light absorption.
Claim 3
Dependent Claim
53 words
The method of claim 1 in which the first layer is formed by plasma decomposition of SiH 4 with 0.3% PH 3 , the second layer by plasma decomposition of SiH 4 with 10% CH 4 and the third layer by plasma decomposition of SiH 4 and 0.3% B 2 H 6 .
Claim 4
Dependent Claim
10 words
A solar cell formed by the method of claim 2.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-02 | 1989-03-04 | 1989-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-02 | 1993-03-04 | 1993-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-02 | 1997-03-04 | 1997-09-03 | $7700.00 | Window Closed / Lapsed |