High power semiconductor package

Claim 2

A high power semiconductor package comprising: a unitary extruded-metal housing having a bottom plate having ends, first and second end walls upstanding from the bottom plate and spaced from each other and from the ends of the bottom plate defining a planar open top and open side walls, the ends of the bottom plate including means for mounting the housing to a mounting surface; the housing including a plurality anchor elements integrally formed on at least one end wall and the bottom plate of said unitary extruded-metal housing; first and second electrical terminals disposed in spaced-apart relation in the housing, each having an outer end protruding from the planar open top of the housing and by which external electrical connection is made, and an inner end within the housing in spaced relation to the bottom plate of the housing; first and second semiconductor die assemblies; means for mounting the semiconductor die assemblies to the bottom plate in spaced-apart relation; means for electrically connecting the first and second die assemblies to the inner ends of corresponding ones of the terminals; and an encapsulant disposed in the housing between the upstanding end walls thereof, the encapsulant being secured by the anchor elements of the housing.

Claim 3

The package of claim 1 wherein said first and second semiconductor die assemblies each include a power semiconductor device electrically connected to the bottom plate.

Claim 4

The package of claim 2 further including a low power electrical component disposed in the housing and connected between a selected electrical terminal and the housing.

Claim 5

The package of claim 1, wherein said first and second semiconductor die assemblies each include a power semiconductor device electrically isolated from said housing.

Claim 6

The package of claim 4 further including a conformal electrically insulating plate on the bottom of the housing; and a conformal electrically conductive strap mounted on the insulating plate, said first and second semiconductor die assemblies are mounted on the conformal electrically conductive strap.

Claim 7

The package of claim 5 wherein the electrically conductive strap includes stress relief sections to accommodate thermal expansion and contraction of the strap.

Claim 8

The package of claim 1 including a conformal coat of material over the first and second die assemblies and operative to accommodate differences in the coefficients of thermal expansion between each die assembly and the encapsulant.

Claim 9

A high power semiconductor package comprising: a unitary extruded-metal housing having a long axis, and having a bottom plate having ends, first and second end walls upstanding from the bottom plate and spaced from each other along the long axis and from the ends of the bottom plate defining open side walls and an open planar top, the ends of the bottom plate including means for mounting the housing to a mounting surface; the housing including a plurality of anchor elements integrally formed on the end walls and on the bottom plate; first and second electrical terminals disposed in the housing in spaced-apart relation along the long axis, each having an outer end protruding from the planar top of the housing and by which external electrical connection is made, and an inner end within the housing in spaced relation to the bottom of the housing; first and second semiconductor die assemblies, each mounted in spaced-apart relation along the long axis of the housing and mechanically adjacent the inner ends of the first and second electrical terminals on the bottom plate and each including a power semiconductor device; each of the electrical terminals including a first conductive post; means for electrically connecting the first posts of said first and second electrical terminals to respective ones of said first and second semiconductor die assemblies; and an encapsulant disposed in the housing between the upstanding walls thereof, the encapsulant being secured by the anchor elements of the housing.

Claim 10

A high power semiconductor package comprising: a unitary extruded-metal housing having a long axis, and having a bottom plate having ends, first and second end walls upstanding from the bottom plate and spaced from each other along the long axis and from the ends of the bottom plate defining open side walls and an open planar top, the ends of the bottom plate including means for mounting the housing to a mounting surface; the housing including a plurality of anchor elements integrally formed on the end walls and on the bottom plate; first and second electrical terminals disposed in the housing in spaced-apart relation along the long axis, each having an outer end protruding from the planar top of the housing and by which external electrical connection is made, and an inner end within the housing in spaced relation to the bottom of the housing; first and second semiconductor die assemblies, each mounted in spaced-apart relation along the long axis of the housing and mechanically adjacent the inner ends of the first and second electrical terminals on the bottom plate and each including a power semiconductor device; each of the electrical terminals including a first conductive post; means for electrically connecting the first posts of said first and second electrical terminals to respective ones of said first and second semiconductor die assemblies; and an encapsulant disposed in the housing between the upstanding walls thereof, the encapsulant being secured by the anchor elements of the housing.

Claim 11

The package of claim 8 further including a low-power dissipation electrical component disposed in the housing and mechanically and electrically connected between one of the electrical terminals and the housing.

Claim 12

The package of claim 8 wherein each of the electrical terminals includes a section of enlarged cross-section intermediate the outer and the inner ends thereof; each of said first and second conductive posts having inner and outer ends, the inner end of each post being supported by and extending from the section of enlarged cross-section of the corresponding terminal, the outer end of each of the posts having an electrical contact portion.

Claim 13

A high power semiconductor package, comprising: a unitary extruded-metal housing a bottom plate having ends, first and second end walls upstanding from the bottom plate and spaced from each other and from the ends of the bottom plate defining open sidewalls and a planar open top, the ends of the bottom plate including means for mounting the housing to a mounting surface; the housing including a plurality of anchor elements integrally formed on and outwardly extending from at least one of said end walls and formed on the bottom plate; first, second, and third electrical terminals disposed in the housing, each having an outer portion protruding from the housing and by which external electrical connection is made, and an inner end within the housing in spaced relation to the bottom plate of the housing; at least one conformal electrically insulating plate disposed on the bottom plate of the housing; an electrically conductive strap disposed on the insulating plate and extending beneath each of the electrical terminals; first and second semiconductor die assemblies, each mounted in spaced-apart relation on the conductive strap and each including a power semiconductor device; said first and second terminals each including a first conductive post on its inner end electrically connected to a respective one of said first and second die assemblies; said third terminal including a conductive post connected to the conductive strap; and an encapsulant disposed in the housing between the upstanding walls thereof, the encapsulant being secured by the anchor elements of the housing.

Claim 14

A high power semiconductor package, comprising: a unitary extruded-metal housing a bottom plate having ends, first and second end walls upstanding from the bottom plate and spaced from each other and from the ends of the bottom plate defining open sidewalls and a planar open top, the ends of the bottom plate including means for mounting the housing to a mounting surface; the housing including a plurality of anchor elements integrally formed on and outwardly extending from at least one of said end walls and formed on the bottom plate; first, second, and third electrical terminals disposed in the housing, each having an outer portion protruding from the housing and by which external electrical connection is made, and an inner end within the housing in spaced relation to the bottom plate of the housing; at least one conformal electrically insulating plate disposed on the bottom plate of the housing; an electrically conductive strap disposed on the insulating plate and extending beneath each of the electrical terminals; first and second semiconductor die assemblies, each mounted in spaced-apart relation on the conductive strap and each including a power semiconductor device; said first and second terminals each including a first conductive post on its inner end electrically connected to a respective one of said first and second die assemblies; said third terminal including a conductive post connected to the conductive strap; and an encapsulant disposed in the housing between the upstanding walls thereof, the encapsulant being secured by the anchor elements of the housing.

Claim 15

The package of claim 8, wherein each of the electrical terminals includes a second post; further including third and fourth semiconductor die assemblies; and means for electrically connecting said third and fourth semiconductor die assemblies to respective second posts of said first and second electrical terminals.

Claim 16

The package of claim 11, wherein each of said first and second electrical terminals further includes a second conductive post, and further including third and fourth semiconductor die assemblies, said second post of the first electrical terminal electrically connected to the third semiconductor die assembly, and said second post of said second electrical terminal electrically connected to the fourth semiconductor die assembly.