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US4536951A
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Method of producing a layered structure
Assignee: Plessey Semiconductors Ltd
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Filing: 1984-06-15
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Granted: 1985-08-27
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Expires: 2004-06-15
Abstract
Abstract A method of forming a layered structure, which method comprises depositing a first metal layer on a substrate, depositing a barrier layer on the first metal layer, depositing a second metal layer on the barrier layer, forming a first masking pattern on the second metal layer, etching the first and second metal layers and the barrier layer in accordance with the first masking pattern, removing the first masking pattern, forming a second masking pattern on the second metal layer, etching the second metal layer in accordance with the second masking pattern, removing the second masking pattern, depositing a dielectric layer having a thickness sufficient to cover the second metal layer, etching the dielectric layer to expose the second metal layer, and depositing on the etched dielectric layer and exposed second metal layer a further metal layer to contact the exposed second metal layer.
Inventors
- 👤 Stephen J. Rhodes
- 👤 Raymond E. Oakley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:20
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/01; H10W20/031; H10W20/063; H10W20/0633; H10W20/069; H10W20/0693
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
143 words
A method of forming a layered structure, which method comprises depositing a first metal layer on a substrate, depositing a barrier layer on the first metal layer, depositing a second metal layer on the barrier layer, forming a first masking pattern on the second metal layer, etching the first and second metal layers and the barrier layer in accordance with the first masking pattern, removing the first masking pattern, forming a second masking pattern on the second metal layer, etching the second metal layer in accordance with the second masking pattern, removing the second masking pattern, depositing a dielectric layer having a thickness sufficient to cover the second metal layer, etching the dielectric layer to expose the second metal layer, and depositing on the etched dielectric layer and exposed second metal layer a further metal layer to contact the exposed second metal layer.
Claim 2
Independent Claim
143 words
A method of forming a layered structure, which method comprises depositing a first metal layer on a substrate, depositing a barrier layer on the first metal layer, depositing a second metal layer on the barrier layer, forming a first masking pattern on the second metal layer, etching the first and second metal layers and the barrier layer in accordance with the first masking pattern, removing the first masking pattern, forming a second masking pattern on the second metal layer, etching the second metal layer in accordance with the second masking pattern, removing the second masking pattern, depositing a dielectric layer having a thickness sufficient to cover the second metal layer, etching the dielectric layer to expose the second metal layer, and depositing on the etched dielectric layer and exposed second metal layer a further metal layer to contact the exposed second metal layer.
Claim 3
Dependent Claim
26 words
A method according to claim 1 wherein the method is selectively repeated until the further metal layer comprises the final metal layer of the layered structure.
Claim 4
Dependent Claim
20 words
A method according to claim 1 wherein the further metal layer comprises the final metal layer of the layered structure.
Claim 5
Dependent Claim
37 words
A method according to claim 2 wherein a final masking pattern is formed on the final metal layer and the final metal layer is etched in accordance with the final masking pattern to remove unwanted metal therefrom.
Claim 6
Dependent Claim
15 words
A method according to claim 4 wherein the layers are etched by anisotropic plasma etching.
Claim 7
Dependent Claim
17 words
A method according to claim 5 wherein the metal layers are etched by carbon tetrachloride plasma etching.
Claim 8
Dependent Claim
19 words
A method according to claim 5 wherein the barrier layer is etched by carbon tetrachloride and oxygen plasma etching.
Claim 9
Dependent Claim
12 words
A method according to claim 4 wherein the metal layers comprise aluminium.
Claim 10
Dependent Claim
11 words
A method according to claim 4 wherein the dielectric comprises polyimide.
Claim 11
Dependent Claim
12 words
A method according to claim 4 wherein the barrier layer comprises chromium.
References Cited (Backward Citations)
US4321284A
Cited
US4392298A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-26 | 1989-02-25 | 1989-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-26 | 1993-02-25 | 1993-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-26 | 1997-02-25 | 1997-08-27 | $7700.00 | Window Closed / Lapsed |