US4536946A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating semiconductor photodetector
Assignee: Individual
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Filing: 1983-12-13
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Granted: 1985-08-27
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Expires: 2003-12-13
Abstract
Abstract A semiconductor photodetector, and a process for producing a semiconductor photodetector, having a shielding gate region isolated from drain or source regions with only a small junction capacitance therebetween. The photodetector is implemented with a vertical static induction transistor. In the static induction transistor, a control gate region is formed on a first principal surface of a silicon wafer. The shielding gate region is formed on the principal surface surrounding the control gate region. At least one first principal electrode region is formed on the first principal surface between the control region and the shielding gate region. A second principal electrode region is formed on a second principal surface of the wafer on the side thereof opposite the first principal electrode region. The shielding gate region is formed in the silicon wafer at a position deeper than the first principal electrode region.
Inventors
- 👤 Junichi Nishizawa
- 👤 Sobei Suzuki
- 👤 Takashige Tamamushi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:55
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/011; H10F39/026; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/343; H10F39/10; H10F39/12; H10F39/196; H10F39/80; H10F39/802; H10F39/805; H10F39/8057
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
167 words
A process for producing a photodetector comprising a vertical static induction transistor, comprising the steps of: formaing a control gate region on a first principal surface of a silicon wafer; forming a shielding gate region on said first principal surface surrounding said control gate region; forming at least one first principal electrode region on said first principal surface in an area between said control region and said shielding gate region; forming a second principal electrode region on a second principal surface of said silicon wafer on the side opposite said first principal electrode region, said first electrode region and said shielding gate region being formed on said first principal surface in such a manner that a top of each of said regions is flush with said first principal surface; and forming an oxide film on the upper part of said shielding gate region by selective oxidation so that remaining portions of said shielding gate region are deeper in said silicon wafer than said first principal electrode region.
Claim 2
Dependent Claim
167 words
A process for producing a photodetector comprising a vertical static induction transistor, comprising the steps of: formaing a control gate region on a first principal surface of a silicon wafer; forming a shielding gate region on said first principal surface surrounding said control gate region; forming at least one first principal electrode region on said first principal surface in an area between said control region and said shielding gate region; forming a second principal electrode region on a second principal surface of said silicon wafer on the side opposite said first principal electrode region, said first electrode region and said shielding gate region being formed on said first principal surface in such a manner that a top of each of said regions is flush with said first principal surface; and forming an oxide film on the upper part of said shielding gate region by selective oxidation so that remaining portions of said shielding gate region are deeper in said silicon wafer than said first principal electrode region.
Claim 3
Dependent Claim
27 words
The process according to claim 1 wherein a plurality of units of said static induction transistor are formed in an array pattern on a single silicon wafer.
Claim 4
Dependent Claim
20 words
The process according to claim 2, wherein said plurality of static induction transistor units are arranged in a two-dimensional array.
Claim 5
Dependent Claim
21 words
The process according to claim 2 wherein said plurality of static induction transistor units are formed in a one-dimensional linear configuration.
Claim 6
Dependent Claim
17 words
The process according to claim 1, wherein a single unit of said static induction transistor is formed.
Claim 7
Dependent Claim
183 words
A process for producing a photodetector comprising a vertical static induction transistor, comprising the steps of: forming a control gate region on a first principal surface of a silicon wafer; forming a shielding gate region on said first principal surface surrounding said control gate region; forming at least one first principal electrode region formed on said first principal surface in an area between said control region and said shielding gate region; forming a second principal electrode region on a second principal surface of said silicon wafer on the side opposite said first principal electrode region, wherein said step of forming said at least one first principal electrode region on said first principal surface comprises forming a top surface of said region flush with said first principal surface, etching a notch in said first principal surface, said shielding gate region being formed at an apex of said notch, and forming an oxide film by oxidizing an upper part of said shielding gate region, and wherein remaining portions of said shielding gate region are deeper in said silicon wafer than said first principal electrode region.
Claim 8
Dependent Claim
183 words
A process for producing a photodetector comprising a vertical static induction transistor, comprising the steps of: forming a control gate region on a first principal surface of a silicon wafer; forming a shielding gate region on said first principal surface surrounding said control gate region; forming at least one first principal electrode region formed on said first principal surface in an area between said control region and said shielding gate region; forming a second principal electrode region on a second principal surface of said silicon wafer on the side opposite said first principal electrode region, wherein said step of forming said at least one first principal electrode region on said first principal surface comprises forming a top surface of said region flush with said first principal surface, etching a notch in said first principal surface, said shielding gate region being formed at an apex of said notch, and forming an oxide film by oxidizing an upper part of said shielding gate region, and wherein remaining portions of said shielding gate region are deeper in said silicon wafer than said first principal electrode region.
Claim 9
Dependent Claim
27 words
The process according to claim 6, wherein a plurality of units of said static induction transistor are formed in an array pattern on a single silicon wafer.
Claim 10
Dependent Claim
19 words
The process according to claim 7, wherein said plurality of static induction transistors are formed in a two-dimensional array.
Claim 11
Dependent Claim
21 words
The process according to claim 7, wherein said plurality of static induction transistor units are formed in a one-dimensional linear configuration.
Claim 12
Dependent Claim
17 words
The process according to claim 6, wherein a single unit of said static induction transistor is formed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-26 | 1989-02-25 | 1989-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-26 | 1993-02-25 | 1993-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-26 | 1997-02-25 | 1997-08-27 | $7700.00 | Window Closed / Lapsed |