Photovoltaic tandem cell

Claim 2

A photovoltaic tandem cell wherein the cells are electrically in series with each other comprising, from top to bottom: an electrically conducting superstrate; a first cell comprising layers (a), (b), and (c), wherein: (a) is a first doped amorphous semiconductor layer of a first conductivity type underlying and in contact with said superstrate, (b) is an intrinsic amorphous semiconductor layer underlying said first doped layer, and (c) is a second doped amorphous semiconductor layer of said second conductivity type underlying said intrinsic layer; a non-opaque, high conductivity layer underlying and in contact with said second doped amorphous semiconductor layer; a second cell underlying and in contact with said non-opaque, high conductivity layer, comprising layers (d) and (e), wherein: (d) is a first polycrystalline semiconductor layer of a first conductivity type underlying and in contact with said non-opaque high conductivity layer, and (e) is a second polycrystalline semiconductor layer of a second conductivity type underlying said first polycrystalline layer and forming a p-n heterojunction therewith; and an electrical contact layer underlying and in contact with said second polycrystalline semiconductor layer.

Claim 3

The tandem cell of claim 1 wherein said electrically conducting superstrate is a transparent conductive oxide or mixture thereof supported on an insulator.

Claim 4

The tandem cell of claim 2 wherein the transparent conductive oxide is selected from the group consisting of indium oxide and tin oxide, alone or in mixture.

Claim 5

The tandem cell in claim 2 wherein said insulator is transparent.

Claim 6

The tandem cell of claim 1 wherein the doped amorphous semiconductor layers are hydrogen containing amorphous silicon.

Claim 7

The tandem cell of claim 5 wherein said first intrinsic semiconductive layer is hydrogen containing amorphous silicon.

Claim 8

The tandem cell of claim 6 wherein said first intrinsic semiconductive layer is a mixture of hydrogen containing amorphous silicon and hydrogen containing amorphous germanium.

Claim 9

The tandem cell of claim 1 wherein said doped amorphous semiconductor layer of the first conductivity type comprises microcrystalline silicon.

Claim 10

The tandem cell of claim 1 wherein said doped amorphous semiconductor layer of the second conductivity type comprises microcrystalline silicon.

Claim 11

The tandem cell of claim 1 wherein said first conductivity type is n(+) and said second conductivity type is p(+).

Claim 12

The tandem cell of claim 1 wherein said doped amorphous semiconductor layers in said first cell are characterized by a bandgap larger than that of said intrinsic semiconductive layer of said first cell.

Claim 13

The tandem cell of claim 11 wherein said doped amorphous semiconductor layer of said first conductivity type is selected from a-(Si,C) and a-(Si,N).

Claim 14

The tandem cell of claim 11 wherein said doped amorphous semiconductor layer of said second conductivity type is selected from a-(Si,C) and a-(Si,N).

Claim 15

The tandem cell of claim 1 wherein said non-opaque, high conductivity layer is a transparent conductive oxide.

Claim 16

The tandem cell of claim 14 wherein said transparent conductive oxide layer is selected from the group consisting of indium oxide and tin oxide, alone and in mixture.

Claim 17

The tandem cell of claim 14 wherein said transparent conductive oxide layer is selected from the group consisting of zinc oxide, cadmium oxide, cadmium stannate, or zinc stannate, alone and in mixture.

Claim 18

The tandem cell of claim 1 wherein said non-opaque, high conductivity layer is a thin metal layer.

Claim 19

The tandem cell of claim 1 wherein said non-opaque, high conductivity layer is a cermet.

Claim 20

The tandem cell of claim 1 where said first polycrystalline layer is selected from CdS and a mixture of ZnS and CdS.

Claim 21

The tandem cell of claim 19 wherein said first polycrystalline layer is doped with indium.

Claim 22

The tandem cell of claim 1 wherein said second polycrystalline layer is selected from Cu 2 S and CuInSe 2 .

Claim 23

The tandem cell of claim 21 wherein said CuInSe 2 layer comprises a first high resistivity CuInSe 2 layer and a second low resistivity CuInSe 2 layer, lying thereon, and said first high resistivity layer being adjacent to said first polycrystalline layer and second low resistivity layer being adjacent said electrical contact layer.

Claim 24

The tandem cell of claim 1 wherein said electrical contact layer comprises a metal.

Claim 25

The tandem cell of claim 23 wherein said metal is selected from the group consisting of chromium and copper, alone and in mixture.

Claim 26

The tandem cell of claim 23 wherein said metal is molybdenum.

Claim 27

The tandem cell of claim 1 wherein the bandgap of said amorphous semiconductor layers of said first cell is different from the bandgap of the polycrystalline semiconductor layers of said second cell.

Claim 28

The tandem cell of claim 1 wherein the bandgap of said intrinisic amorphous semiconductor layer is larger than the bandgap of said second polycrystalline semiconductor layer.

Claim 29

The tandem cell of claim 1 wherein the thickness of said intrinsic amorphous semiconductor layer is adjusted to produce a light generated current essentially equal to the light generated current produced by said second polycrystalline semiconductor layer.

Claim 30

The tandem cell of claim 1 wherein said first cell is an amorphous silicon cell, and said second cell is a CdS/Cu 2 S cell.

Claim 31

The tandem cell of claim 1 wherein said first cell is an amorphous silicon cell, and said second cell is a CdS/CuInSe 2 cell.

Claim 32

The tandem cell of claim 1 wherein said first cell is an amorphous silicon cell and said second cell is a polycrystalline heterojunction cell having CdS as one of its layers, and said cells being in contact with an intermediate transparent conductive oxide which comprises said non-opaque, highly conducting layer.

Claim 33

The tandem cell of claim 1 wherein a plurality of separated tandem solar cell stripes are connected in electrical series.

Claim 34

A photovoltaic tandem cell wherein the cells are electrically in series with each other comprising, from bottom to top: an electrically conducting substrate; a polycrystalline heterojunction cell comprising layers (a) and (b), wherein: (a) is a first doped polycrystalline semiconductor layer of a first conductivity type overlying and in contact with said substrate, and (b) is a second polycrystalline semiconductor layer of a second conductivity type overlying and in contact with said first polycrystalline layer and forming a p-n heterojunction therewith; a non-opaque, high conductivity layer overlying and in contact with said polycrystalline layer; an amorphous cell comprising layers (c), (d), and (e), wherein: (c) is a first doped amorphous semiconductor layer of first conductivity type overlying and in contact with said non-opaque, high conductivity layer, (d) is an intrinsic amorphous semiconductor layer overlying and in contact with said first doped amorphous layer, and (e) is a second doped amorphous semiconductor layer of a second conductivity type overlying and in contact with said intrinsic amorphous layer; and (h) an electrical contact layer overlying and in contact with said second doped amorphous semiconductor layer.

Claim 35

A photovoltaic tandem cell wherein the cells are electrically in series with each other comprising, from bottom to top: an electrically conducting substrate; a polycrystalline heterojunction cell comprising layers (a) and (b), wherein: (a) is a first doped polycrystalline semiconductor layer of a first conductivity type overlying and in contact with said substrate, and (b) is a second polycrystalline semiconductor layer of a second conductivity type overlying and in contact with said first polycrystalline layer and forming a p-n heterojunction therewith; a non-opaque, high conductivity layer overlying and in contact with said polycrystalline layer; an amorphous cell comprising layers (c), (d), and (e), wherein: (c) is a first doped amorphous semiconductor layer of first conductivity type overlying and in contact with said non-opaque, high conductivity layer, (d) is an intrinsic amorphous semiconductor layer overlying and in contact with said first doped amorphous layer, and (e) is a second doped amorphous semiconductor layer of a second conductivity type overlying and in contact with said intrinsic amorphous layer; and (h) an electrical contact layer overlying and in contact with said second doped amorphous semiconductor layer.

Claim 36

The tandem cell in claim 33 wherein said substrate comprises a mechanical support for said cell.

Claim 37

The tandem cell of claim 34 wherein said mechanical support is a metal sheet.

Claim 38

The tandem cell of claim 34 wherein said mechanical support is a metal supported on an insulator.

Claim 39

The tandem cell of claim 33 wherein said electrical contact layer comprises a transparent conductive oxide.

Claim 40

The tandem cell of claim 33 wherein said electrical contact layer comprises a transparent conductive oxide in combination with a metallic grid.