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US4533831A
Expired / Lapsed
US
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Non-mass-analyzed ion implantation
Assignee: New Energy Development Organization
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Filing: 1983-03-21
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Granted: 1985-08-06
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Expires: 2003-03-21
Abstract
Abstract A non-mass-analyzed ion implantation process wherein two or more species of ions of the same polarity having greatly different ion masses are generated from a compound source material, the ions are accelerated under the application of an electric field, and the accelerated ions are scanned under the application of a magnetic field so as to be implanted into a target at a distribution profile which varies with the species of ions. An ion implantation apparatus can be simplified. A large ion beam current with a large spot size can be used and ions can be implanted to the target at a large dose within a short time. Especially, the non-mass-analyzed ion implantation is advantageously utilized for production of solar batteries.
Inventors
- 👤 Haruo Itoh
- 👤 Katsumi Tokiguchi
- 👤 Terunori Warabisako
- 👤 Tadashi Saitoh
- 👤 Takashi Tokuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 09:18
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/1204; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3171
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
94 words
A non-mass-analyzed ion implantation process using ions generated from a compound without selecting a single ion species, comprising the steps of: generating ions, which include at least two species of ions of the same polarity, from a compound source material; accelerating said ions; scanning said accelerated ions electromagnetically and repetitively in a direction transverse to an acceleration direction; and implanting beams of said scanned ions, including said at least two species of ions, into a target, with said at least two species of ions being implanted with different distribution profiles of implanted ion doses.
Claim 2
Dependent Claim
94 words
A non-mass-analyzed ion implantation process using ions generated from a compound without selecting a single ion species, comprising the steps of: generating ions, which include at least two species of ions of the same polarity, from a compound source material; accelerating said ions; scanning said accelerated ions electromagnetically and repetitively in a direction transverse to an acceleration direction; and implanting beams of said scanned ions, including said at least two species of ions, into a target, with said at least two species of ions being implanted with different distribution profiles of implanted ion doses.
Claim 3
Dependent Claim
27 words
A non-mass-analyzed ion implantation process according to claim 1 wherein said ions include at least two species of ions of the same polarity having different ion masses.
Claim 4
Dependent Claim
26 words
A non-mass-analyzed ion implantation process according to claim 2 wherein the mass ratio between said at least two species of ions is about 1.6 or more.
Claim 5
Dependent Claim
18 words
A non-mass-analyzed ion implantation process according to claim 2 wherein said mass ratio is about 3.9 or more.
Claim 6
Dependent Claim
17 words
A non-mass-analyzed ion implantation process according to claim 4 wherein said mass ratio is 25 or more.
Claim 7
Dependent Claim
34 words
A non-mass-analyzed ion implantation process according to claim 1 wherein said step of scanning comprises applying a magnetic field which varies periodically in a direction vertical to a travelling direction of the ion beams.
Claim 8
Dependent Claim
24 words
A non-mass-analyzed ion implantation process according to claim 1 wherein said compound comprises a hydrogen compound of one of group III and V elements.
Claim 9
Dependent Claim
19 words
A non-mass-analyzed ion implantation process according to claim 7 wherein said hydrogen compound comprises one of phosphine and arsine.
Claim 10
Dependent Claim
19 words
A non-mass-analyzed ion implantation process according to claim 7 wherein said step of generating ions comprises generating plasma discharge.
Claim 11
Dependent Claim
39 words
A non-mass-analyzed ion implantation process according to claim 1 wherein said step of accelerating comprises applying an electric field to said ions to apply said ions of one polarity with acceleration energy of the order of at least KeV.
Claim 12
Dependent Claim
24 words
A non-mass-analyzed ion implantation process according to claim 1 wherein said target is moved in a direction substantially vertical to the direction of scanning.
Claim 13
Dependent Claim
68 words
A non-mass-analyzed ion implantation process according to claim 2 wherein said compound comprises a hydrogen compound of one of group III and V elements, said at least two species of ions of the same polarity comprise a univalent ion of said one element and a univalent ion of hydrogen, and said target is placed within a range over which said univalent ion of said one element is scanned.
Claim 14
Dependent Claim
29 words
A non-mass-analyzed ion implantation process according to claim 1 wherein said scanning is performed to provide superposed and different scanning spans for said at least two species of ions.
Claim 15
Dependent Claim
21 words
A non-mass-analyzed ion implantation process according to claim 13 wherein said superposed and different scanning spans have a common central point.
Claim 16
Dependent Claim
32 words
A non-mass-analyzed ion implantation process according to claim 1 wherein, in said implanting, the at least two species of ions are implanted with superposed and different distribution profiles of implanted ion doses.
Claim 17
Dependent Claim
19 words
A non-mass-analyzed ion implantation process according to claim 1 wherein the ions are generated using a microwave ion source.
Claim 18
Independent Claim
105 words
A method of producing a semiconductor device wherein one conductivity affording impurity is doped into a semiconductor substrate by non-mass-analyzed ion implantation, a discharge gas of a hydrogen compound of the impurity is used to generate ion beams which include at least H + ion and ion of said impurity, and the generated ion beams including at least H + ion and ion of said impurity are scanned by a magnetic field to cause superposed and different scanning spans for the H + ion and ion of said impurity and reduce the dose of H + relative to the dose of ion of the impurity.
Claim 19
Independent Claim
105 words
A method of producing a semiconductor device wherein one conductivity affording impurity is doped into a semiconductor substrate by non-mass-analyzed ion implantation, a discharge gas of a hydrogen compound of the impurity is used to generate ion beams which include at least H + ion and ion of said impurity, and the generated ion beams including at least H + ion and ion of said impurity are scanned by a magnetic field to cause superposed and different scanning spans for the H + ion and ion of said impurity and reduce the dose of H + relative to the dose of ion of the impurity.
Claim 20
Dependent Claim
35 words
A method of producing a semiconductor device according to claim 17 wherein said one conductivity impurity comprises one of As and P, and said discharge gas contains one of AsH 3 and PH 3 .
Claim 21
Dependent Claim
62 words
A method of producing a semiconductor device according to claim 18 wherein the impurity is P and the discharge gas is PH 3 , and the generated ion beams are scanned such that when the total dose of P is 1×10 15 to 3×10 16 cm -2 , the total dose of H + ion is 1×10 15 cm -2 or less.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-05 | 1989-02-04 | 1989-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-05 | 1993-02-04 | 1993-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-05 | 1997-02-04 | 1997-08-06 | $7700.00 | Window Closed / Lapsed |