Patent US4532196A successfully refreshed from Google Patents.
US4532196A
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Amorphous silicon photoreceptor with nitrogen and boron
Assignee: Stanley Electric Co Ltd
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Filing: 1984-02-14
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Granted: 1985-07-30
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Expires: 2004-02-14
Abstract
Abstract A photoreceptor of electrophotography having, on a substrate, an amorphous silicon (a-Si) layer formed by relying on plasma CVD technique, wherein the a-Si layer is formed in the presence of silane, diborane and nitrogen, and possibly phosphine as required. This a-Si layer may have a multiple layer structure comprising a thin a-Si layer formed in the presence of silane and diborane or nitrogen, and a principal a-Si layer formed in the presence of silane, diborane and nitrogen, and possibly phosphine as required, but in such instance the amount of phosphine which is added is less than three times that of diborane. Such photoreceptor has a good sensitivity to light rays, has long service life, and is not harmful to human body.
Inventors
- 👤 Masaru Yasui
- 👤 Kazuhisa Kato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 03:27
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G13/00; G03G13/22; H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
129 words
A process for electrophotography comprising: providing on a substrate a layer of amorphous silicon having a dark conductivity of less than about 10 -12 (ohm cm) -1 , charging the surface of said layer to an electrical potential above about 500 volts, said charge being retained on said surface for a half-life of at least 15 seconds as a result of said low dark conductivity value without the use of a charge transport layer, and selectively exposing said layer to light so as to form a latent image represented by the residual charge on said layer, and wherein said step of providing comprises: forming said amorphous silicon (a-Si) layer on said substrate by a plasma chemical vapor deposition (CVD) technique using silane and both boron and nitrogen containing gasses.
Claim 2
Dependent Claim
129 words
A process for electrophotography comprising: providing on a substrate a layer of amorphous silicon having a dark conductivity of less than about 10 -12 (ohm cm) -1 , charging the surface of said layer to an electrical potential above about 500 volts, said charge being retained on said surface for a half-life of at least 15 seconds as a result of said low dark conductivity value without the use of a charge transport layer, and selectively exposing said layer to light so as to form a latent image represented by the residual charge on said layer, and wherein said step of providing comprises: forming said amorphous silicon (a-Si) layer on said substrate by a plasma chemical vapor deposition (CVD) technique using silane and both boron and nitrogen containing gasses.
Claim 3
Dependent Claim
68 words
A photoreceptor of electrophotography having, on a substrate, an amorphous silicon (a-Si) layer formed by relying on plasma CVD technique, wherein said a-Si layer is formed in the presence of silane, diborane, nitrogen and hydrogen, said layer having a dark conductivity of less than about 10 -12 (ohm cm) -1 and being exposed for the application thereto of an electrical charge, said photoreceptor having no charge transport layer.
Claim 4
Dependent Claim
68 words
A photoreceptor of electrophotography having, on a substrate, an amorphous silicon (a-Si) layer formed by relying on plasma CVD technique, wherein said a-Si layer is formed in the presence of silane, diborane, nitrogen and hydrogen, said layer having a dark conductivity of less than about 10 -12 (ohm cm) -1 and being exposed for the application thereto of an electrical charge, said photoreceptor having no charge transport layer.
Claim 5
Dependent Claim
112 words
A photoreceptor of electrophotography having, on a substrate, an amorphous silicon surface layer formed by relying on plasma CVD technique, wherein said amorphous silicon surface layer is formed in the presence of 5-40% by volume of silane, 10-500 parts per million by volume of diborane, and 1-20% by volume of nitrogen and the remainder of hydrogen, relative to the total flow rate of gas of the above-mentioned substances, and further including a thin layer of amorphous silicon, said thin layer being formed in the presence of: 1-20% by volume of nitrogen; 5-40% by volume of silane; and the remainder of hydrogen relative to the total flow of gas of the above-mentioned substances.
Claim 6
Dependent Claim
112 words
A photoreceptor of electrophotography having, on a substrate, an amorphous silicon surface layer formed by relying on plasma CVD technique, wherein said amorphous silicon surface layer is formed in the presence of 5-40% by volume of silane, 10-500 parts per million by volume of diborane, and 1-20% by volume of nitrogen and the remainder of hydrogen, relative to the total flow rate of gas of the above-mentioned substances, and further including a thin layer of amorphous silicon, said thin layer being formed in the presence of: 1-20% by volume of nitrogen; 5-40% by volume of silane; and the remainder of hydrogen relative to the total flow of gas of the above-mentioned substances.
Claim 7
Dependent Claim
39 words
A photoreceptor as described in claim 3, wherein said thin layer is formed on top of the substrate and the preferred ranges for forming the thin layer are: 2-15% by volume of nitrogen; and 5-20% by volume of silane.
Claim 8
Dependent Claim
34 words
A photoreceptor as described in claim 4, wherein phosphine is added as required while forming the surface silicon layer and wherein the volume of phosphine is less than three times the volume of diborane.
Claim 9
Dependent Claim
66 words
A photoreceptor of electrophotography formed on a substrate, said photoreceptor comprising: an electrical charge retaining layer of amorphous silicon characterized by the combined presence therein of nitrogen, boron and hydrogen to provide a dark conductivity of less than about 10 -12 (ohm cm) -1 , said layer having a surface exposed for the application thereto of an electrical charge, said photoreceptor having no charge transport layer.
Claim 10
Dependent Claim
66 words
A photoreceptor of electrophotography formed on a substrate, said photoreceptor comprising: an electrical charge retaining layer of amorphous silicon characterized by the combined presence therein of nitrogen, boron and hydrogen to provide a dark conductivity of less than about 10 -12 (ohm cm) -1 , said layer having a surface exposed for the application thereto of an electrical charge, said photoreceptor having no charge transport layer.
Claim 11
Dependent Claim
57 words
A photoreceptor for electrophotography comprising, on a substrate, an amorphous silicon (a-Si) layer formed by a plasma chemical vapor deposition (CVD) technique using silane and both boron and nitrogen containing gasses, so that said a-Si layer exhibits a dark conductivity of less than about 10 -12 (ohm cm) -1 , said photoreceptor having no charge transport layer.
Claim 12
Dependent Claim
57 words
A photoreceptor for electrophotography comprising, on a substrate, an amorphous silicon (a-Si) layer formed by a plasma chemical vapor deposition (CVD) technique using silane and both boron and nitrogen containing gasses, so that said a-Si layer exhibits a dark conductivity of less than about 10 -12 (ohm cm) -1 , said photoreceptor having no charge transport layer.
Claim 13
Dependent Claim
69 words
A photoreceptor for electrophotography comprising, on a substrate, an amorphous silicon (a-Si) layer formed by a plasma chemical vapor deposition (CVD) technique using silane and both boron and nitrogen containing gasses, so that said a-Si layer exhibits a dark conductivity of less than about 10 -12 (ohm cm) -1 , and wherein the upper surface of said a-Si layer is exposed for the application thereto of an electrical charge.
Claim 14
Dependent Claim
69 words
A photoreceptor for electrophotography comprising, on a substrate, an amorphous silicon (a-Si) layer formed by a plasma chemical vapor deposition (CVD) technique using silane and both boron and nitrogen containing gasses, so that said a-Si layer exhibits a dark conductivity of less than about 10 -12 (ohm cm) -1 , and wherein the upper surface of said a-Si layer is exposed for the application thereto of an electrical charge.
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USPTO Annuity & Maintenance Windows
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| 3.5 Years (Year 4) | 1988-07-29 | 1989-01-28 | 1989-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-29 | 1993-01-28 | 1993-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-29 | 1997-01-28 | 1997-07-30 | $7700.00 | Window Closed / Lapsed |