Patent US4531143A successfully refreshed from Google Patents.
US4531143A
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Laser activated MTOS microwave device
Assignee: Individual
•
Filing: 1983-10-14
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Granted: 1985-07-23
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Expires: 2003-10-14
Abstract
Abstract A metal thin oxide silicon (MTOS) optically-activated semiconductor device having respective thin, optically absorptive aluminum layers deposited over a thin oxide layer formed on a silicon substrate over a lightly doped, implant diffused region.
Inventors
- 👤 Joseph Maserjian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:50
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/78; H03K17/785; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/282
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
71 words
A semiconductor device comprising: an intrinsic silicon substrate; a lightly doped region in said silicon substrate; a dielectric layer formed on said silicon substrate and over said lightly doped region; and first and second light absorptive, conductive layers, each residing on said dielectric layer and extending over said lightly doped region, said first and second conductive layers being spaced apart by a gap, said gap residing over said lightly doped region.
Claim 2
Dependent Claim
71 words
A semiconductor device comprising: an intrinsic silicon substrate; a lightly doped region in said silicon substrate; a dielectric layer formed on said silicon substrate and over said lightly doped region; and first and second light absorptive, conductive layers, each residing on said dielectric layer and extending over said lightly doped region, said first and second conductive layers being spaced apart by a gap, said gap residing over said lightly doped region.
Claim 3
Dependent Claim
22 words
The semiconductor device of claim 1 wherein said dielectric layer is an oxide layer of a thickness sufficient to prevent tunneling effects.
Claim 4
Dependent Claim
30 words
The semiconductor device of claim 2 wherein said first and second conductive layers each step up to a thicker nonlight absorptive structure near the edge of said lightly doped region.
Claim 5
Dependent Claim
17 words
The semiconductor device of claims 1, 2 or 3 wherein said lightly doped region is implant diffused.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-22 | 1989-01-21 | 1989-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-22 | 1993-01-21 | 1993-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-22 | 1997-01-21 | 1997-07-23 | $7700.00 | Window Closed / Lapsed |