Indium phosphide-boron phosphide heterojunction bipolar transistor

Claim 2

A wide gap emitter bipolar transistor structure comprising: a semi-insulating indium phosphide substrate; an n- type epitaxial indium phosphide collector layer formed on the surface of said indium phosphide substrate; an n+ type collector contact region disposed in said collector region; a p- type base region disposed in said collector layer displaced from said collector contact region; a n- type epitaxial boron phosphide emitter region disposed on the surface of said collector layer within said base region; an emitter contact region disposed over said emitter region; and a base contact region disposed in said collector layer adjacent to and integral with said base region.

Claim 3

The transistor structure of claim 1 further including a buried n+ layer disposed intermediate said indium phosphide substrate and said collector layer.

Claim 4

The transistor structure of claim 2 wherein said indium phosphide collector layer has a carrier concentration of approximately 2×10 15 cm -3 .

Claim 5

The transistor structure of claim 3 wherein said collector contact region has a carrier concentration of approximately 2×10 18 cm -3 .

Claim 6

The transistor structure of claim 3 wherein said base region has a carrier concentration of approximately 6 to 8×10 17 cm -3 .

Claim 7

The transistor structure of claims 3 or 5 wherein said base contact region has a carrier concentration greater than 10 18 cm -3 .

Claim 8

The transistor structure of claim 5 wherein said boron phosphide emitter region has a carrier concentration of approximately 1 to 2×10 18 cm -3 .

Claim 9

The transistor structure of claim 7 wherein said emitter contact region has a carrier concentration of greater than 10 19 cm -3 .

Claim 10

The transistor structure of claim 2 or 7 wherein said buried n+ layer has a carrier concentration of approximately 2 to 5×10 18 cm -3 .

Claim 11

The transistor structure of claim 1 where said transistor has a mesa structure and said indium phosphide layer has a discontinuity at its extremities.

Claim 12

The transistor structure of claim 1 wherein said indium phosphide layer includes a nonconductive barrier region circumscribing said collector contact region.

Claim 13

The transistor structure of claim 11 wherein said barrier region is a boron implanted region.

Claim 14

The transistor of claim 7 wherein said collector contact and base contact regions circumscribe said emitter region.

Claim 15

A wide gap emitter bipolar transistor structure comprising: a semi-insulating indium phosphide substrate; an n- type expitaxial indium phosphide collector layer formed on the surface of said substrate having a carrier concentration of approximately 2×10 15 cm -3 ; a buried n+ layer disposed between said substrate and said collector layer, said n+ layer having a carrier concentration of approximately 2 to 5×10 18 cm -3 ; a collector contact region formed in said collector layer having a carrier concentration of 2×10 18 cm 3 ; a p- indium phosphide base region formed in said collector layer and separated from said collector contact region, said base region having a carrier concentration of approximately 6 to 8×10 17 cm -3 ; a p+ base contact formed in said base region having a carrier concentration greater than 10 18 cm -3 ; an n- type wide gap boron phosphide emitter disposed over said base region, said boron phosphide emitter having a carrier concentration of approximatey 1 to 2×10 18 cm -3 ; and an n+ boron phosphide emitter contact region disposed over said emitter region, said emitter contact region having a carrier concentration greater than 10 19 cm -3 .

Claim 16

A wide gap emitter bipolar transistor structure comprising: a semi-insulating indium phosphide substrate; an n- type expitaxial indium phosphide collector layer formed on the surface of said substrate having a carrier concentration of approximately 2×10 15 cm -3 ; a buried n+ layer disposed between said substrate and said collector layer, said n+ layer having a carrier concentration of approximately 2 to 5×10 18 cm -3 ; a collector contact region formed in said collector layer having a carrier concentration of 2×10 18 cm 3 ; a p- indium phosphide base region formed in said collector layer and separated from said collector contact region, said base region having a carrier concentration of approximately 6 to 8×10 17 cm -3 ; a p+ base contact formed in said base region having a carrier concentration greater than 10 18 cm -3 ; an n- type wide gap boron phosphide emitter disposed over said base region, said boron phosphide emitter having a carrier concentration of approximatey 1 to 2×10 18 cm -3 ; and an n+ boron phosphide emitter contact region disposed over said emitter region, said emitter contact region having a carrier concentration greater than 10 19 cm -3 .

Claim 17

The transistor structure of claim 14 wherein said substrate is approximately 100 micrometers thick.

Claim 18

The transistor structure of claim 14 or 15 wherein said collector layer is between 0.5 and 1.0 micrometers thick.

Claim 19

The transistor structure of claim 16 further including: an insulating layer disposed on the surface of the transistor having openings exposing said collector, base and emitter contact regions, and at least three metallic electrodes disposed on the surface of said insulator layer and electrically isolated from each other, each of said three electrodes individually making electrical contact with one of said collector, base and emitter contact regions through said openings.

Claim 20

An improved indium phosphide bipolar transistor having an n- type epitaxial indium phosphide collector layer disposed on a semi-insulating indium phosphide substrate and a p- type indium phosphide base region formed in said collector layer, the improvement comprising an epitaxial n- type boron phosphide emitter disposed on the surface of said p- type base region and forming a heterojunction therewith.

Claim 21

An improved indium phosphide bipolar transistor having an n- type epitaxial indium phosphide collector layer disposed on a semi-insulating indium phosphide substrate and a p- type indium phosphide base region formed in said collector layer, the improvement comprising an epitaxial n- type boron phosphide emitter disposed on the surface of said p- type base region and forming a heterojunction therewith.

Claim 22

The improvement of claim 18 further including a buried n+ indium phosphide layer disposed between said collector layer and said substrate.

Claim 23

The improvement of claim 19 further including: an n+ indium phosphide collector contact region disposed in said collector layer; a p+ indium phosphide base contact region disposed in said base region; and and n+ boron phosphide emitter contact region disposed on said emitter.

Claim 24

The improvement of claim 20 further including: an insulator layer disposed on the surface of the transistor, said insulator layer having openings exposing said collector, base and emitter contact regions; and at least three metallic electrodes disposed on the surface of insulator layer and electrically isolated from each other, each of said electrodes contacting one of said exposed collector, base and emitter contact regions through said openings.